ROHM DTC024EM, DTC024EEB, DTC024EUB Technical data

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100mA/50V Digital transistors(with built-in resistors)
DTC024EM / DTC024EEB / DTC024EUB
Features  Dimensions (Unit : mm)
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
VMT3
Abbreviated symbol : 48
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Applications
Inverter, Interface, Driver
UMT3F
(1) (2)
Abbreviated symbol : 48
2.0
0.32
(3)
0.4250.425
2.1
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : 48
Packaging specifications Equivalent circuit
Package VMT3 EMT3F Packaging Type Taping Taping Taping
Type
DTC024EM DTC024EEB
Code T2L TL
Basic ordering unit (pieces)
8000 3000 3000
-○
DTC024EUB - -
--
UMT3F
TL
-
IN
IN
R
1=R2
R
1
R
2
=22k
GND
Absolute maximum (Ta=25C)
Parameter Symbol
Supply voltage
Input voltage
Collector current *1 Output current Power dissipation *2
V
V
I
C(max)
I
P
CC
IN
O
D
Limits(DTC024E□)
MEB UB
50 V 40 V
-10 V
100 mA
30 mA
150 200 Junction temperature Tj 150 Range of storage temperature Tstg -55 to +150
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
0.9
0.530.53
0.13
OUT
GND
OUT
Unit
mW
CC
1/2
2011.08 - Rev.A
DTC024EM / DTC024EEB / DTC024EUB
Electrical characteristics (Ta=25C)
Parameter Min. Typ. Test Conditions Input voltage Output voltage - 0.05
Input current - ­Output current - ­DC current gain 60 -
Transition frequency * - 250 Input resistance 15.4 22
Resistance ratio 0.8 1.0
* Characteristics of built-in transistor
Electrical characteristics curves
Symbol Max. Unit
V V
V
I
R
I(off) I(on)
O(on)
I
I
O(off)
G
f
T
R
2/R1
I
1
--
3.0 -
0.5 V
-V
0.15 V
0.36 mA 500 nA
--
- MHz
28.6
k
1.2 -
VCC=5V / IO=100uA VO=0.3V / IO=5mA IO=5mA / II=0.5mA VI=5V VCC=50V / VI=0V V
=10V / IO=5mA
O
V
=10V /IE=-5mA
CE
f=100MHz
Data Sheet
100
(V)
I(on)
10
Ta=-40ºC
Ta=25ºC Ta=75ºC
Ta=125ºC
1
INPUT VOLTAGE : V
0.1
0.1 1 10 100 OUTPUT CURRENT : I
O
VO=0.3V
(mA)
(mA)
O
OUTPUT CURRENT : I
10
VCC=5V
1
0.1
0.01
0.001 0 0.5 1 1.5 2 2.5 3
INPUT VOLTAGE : V
Fig.1 Input Voltage vs. Output Current fig.2 Input Voltage vs. Output Current
(ON characteristics) (OFF characteristics)
I
1000
100
VO=10V
Ta=125ºC
Ta=75ºC Ta=25ºC
Ta=-40ºC
(V)
O(on)
0.1
1
Ta=125ºC
Ta=75ºC Ta=25ºC
Ta=-40ºC
Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC
(V)
I(off)
IO/II=10
10
DC CURRENT GAIN : G
1
0.1 1 10 100 OUTPUT CURRENT : I
Fig.3 DC Current Gain vs. Output Current Fig.4 Output Voltage vs. Output Current
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
(mA)
O
2/2
0.01
OUTPUT VOLTAGE : V
0.001
0.1 1 10 100 OUTPUT CURRNET : I
(mA)
O
2011.08 - Rev.A
Notes
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A
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