ROHM DTC015TUB Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTC015T series

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

lFeatures

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

lInner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary PNP Types :DTA015T series

6) Lead Free/RoHS Compliant.

lApplication

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications

R

1

100kW

Parameter

Value

V

CEO

50V

I

C

100mA

Part No.

Package

Package

size

(mm)

Taping

code

3,000618

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTC015TM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

61

DTC015TEB

EMT3F

1616

TL

180

3,000

61

DTC015TUB

UMT3F

2021

TL

180

8

VMT3

EMT3F

UMT3F

DTC015TM

(SC-105AA)

Collector

Base

Emitter

DTC015TUB

(SC-85)

Collector

Base

Emitter

Collector

Base

Emitter

DTC015TEB

(SC-89)

1/6

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC015T series

lAbsolute maximum ratings (Ta = 25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

Parameter

Symbol

Values

Unit

V

CBO

50

V

V

CEO

50

V

V

EBO

5

V

I

C

100

mA

DTC015TM
DTC015TEB

P

C

*2

150

mW

DTC015TUB

200

mW

T

j

150

°C

T

stg

-55 to +150

°C

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

V

Collector-emitter breakdown voltage

BV

CEO

IC= 1mA

V50-50---

Collector-base breakdown voltage

BV

CBO

IC= 50μA

V--

0.5mA5--mA-

0.03

0.15V--0.5-70

100

130kW100-600

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

IE= 50μA

Collector cut-off current

I

CBO

V

CB

= 50V

Emitter cut-off current

I

EBO

V

EB

= 4V

Emitter-base breakdown voltage

BV

EBO

IC / IB= 5mA / 0.25mA

DC current gain

h

FE

VCE= 10V , IC= 5mA

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

2/6

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC015T series

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

VCE=10V

Ta=125ºC

75

ºC

25ºC

-

40ºC

0

5

10

15

20

25

0 5 10

50μA

0A

60μA

70μA

80μA

90μA

100μA

40μA

30μA

20μA

IB=

Ta=25ºC

10μA

10

100

1000

10000

0.1 1 10 100

VCE=10V

Ta=125ºC

75

ºC

25

ºC

-

40ºC

0.01

0.1

1

0.1 1 10 100

IC/IB=10/1

Ta=125ºC

75

ºC

25

ºC

-

40ºC

3/6

2012.04 - Rev.A