ROHM DTB743XE, DTB743XM Technical data

Transistors

DTB743XE / DTB743XM

-200mA / -30V Low V

CE

(sat) Digital transistors

(with built-in resistors)

DTB743XE / DTB743XM

zApplications

Inverter, Interface, Driver

zFeature

CE(sat) is lower than the conventional products.

1) V

2) Built-in bias resistors enable the co nfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).

3) The bias resistors consist of t hin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for

operation, making the devi ce design easy.

zStructure

PNP epitaxial pla nnar silicon transistor
(Resistor built-in type)

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

CC

V

IN

V

∗1

C (max)

I

∗2

P

D

Tj

Tstg

Limits

DTB743XE DTB743XM

−30

−20 to +7

−200

150
150

−55 to +150

zElectrical characteristics (T a=25°C) zEquivalent circuit

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

∗

V
V

V

O(on)

I

O(off)

G

R

R2/R

I(off)

I(on)

I

f

I

I

T

1

1

Typ. Max. Unit Conditions

Min.

−

−70

260

4.7

2.1

−0.3

−

−

−

−

V

−

mV

−300
mA

−1.4
µA

−0.5

−

−

MHz

−

6.11

kΩ

2.6

−−

−

−2.5

−

−

−

140

−

3.29

1.7

zDimensions (Unit : mm)

DTB743XE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTB743XM

VMT3

Unit

V
V

mA

mW

C
C

V

CC

= − 5V, IO= −100µA

O

= −0.3V, IO= −20mA

V
I

O/II

= −50mA / −2.5mA

I

= −5V

V
V

CC

= −30V, VI=0V

O

= −2V, IO= −100mA

V
V

CE

= −10V, IE=5mA, f=100MHz

−

0.2

Abbreviated symbol : M33

0.22

Abbreviated symbol : M33

Part No.
DTB743XE
DTB743XM

1.6

0.3

(3)

(2)

0.5

0.5

1.0

0.32

(3)

(1)

0.40.4

Package

0.7

0.55

1.6

0.8

(1)

0.2

0.15

Each lead has same dimensions

1.2

0.2

1.2

0.8

(2)

0.8

0.13

0.2

0.5

Each lead has same dimensions

(1) GND

0.1Min.

(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

EMT3 VMT3

Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

TL

3000

−

R

1

IN

R

2

IN

GND(+)

R1=4.7kΩ / R2=10kΩ

T2L

8000

−

OUT

GND(+)

OUT

Rev.A 1/2

Transistors

)
)

zElectrical characteristics curves

160
140
120
100

80
60
40

OUTPUT CUR RENT : Io (m A

20

0

Fig.1 Output Current vs. Output Voltage

℃

Ta=25

0 0.2 0.4 0.6 0.8 1

OUTPUT VOLTAGE : Vo (V)

Ii=1.0m
Ii=0.9m

Ii=0.8m
Ii=0.7m

Ii=0.6m

Ii=0.5m
Ii=0.4m
Ii=0.3m
Ii=0.2m

Ii=0mA

100

Ta=－40

℃

　　　　25℃

10

　　　　85℃

125

℃

1

INPUT VOLTAGE : Vin (V

0.1

0.01 1 100

OUTPUT CURRENT : IO (mA)

V0=0.3V

Fig.2 Input Voltage vs. Output Current

DTB743XE / DTB743XM

100

VCC=5V

Ta=125

(mA)

10

O

1

0.1

OUTPUT CURRENT : I

0.01

00.511.52

Fig.3 Output Current vs. Input Voltage

℃
　　　　85℃
　　　　25℃

　　　－40℃

INPUT VOLTAGE : Vin(off) (V)

(on) (V)

O

1

0.1

Ta=125

℃
　　　　85℃
　　　　25℃

　　　－40℃

IO/II = 20/1

1000

I

100

10

Ta=125

℃
　　　　85℃
　　　　25℃

　　　－40℃

VO=5V

DC CURENT GAIN : G

OUTPUT VOLTAGE : V

1

0.01 0.1 1 10 100 1000

OUTPUT CURENT : IO (mA)

0.01
1 10 100 1000

OUOPUT CURRENT : I

(mA)

O

Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current

Rev.A 2/2