ROHM DTB723YE, DTB723YM Technical data

R

-200mA / -30V Low V

(sat) Digital transistors

CE

(with built-in resistors)

DTB723YE / DTB723YM

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeature

1) V

CE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).

3) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of the input.
They also have the advantage
of almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

zStructure

PNP epitaxial plannar silicon transistor
(Resistor built-in type)

zPackaging specifications

EMT3 VMT3

TL

3000

T2L

8000

−

−

Part No.
DTB723YE
DTB723YM

Package
Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C) zInner circuit

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1
∗2

C (max)

I

P

D

Tj

Tstg

DTB723YE DTB723YM

Limits

−30

−15 to +5

−200

150
150

−55 to +150

Unit

V
V

mA

mW

C
C

DTB723YE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTB723YM

VMT3

IN

IN

1

=2.2kΩ / R2=10kΩ

1.6

0.3

(3)

(2)

(1)

0.2

R

1

R

2

GND(+)

0.2

0.5

0.5

1.0

Abbreviated symbol : M52

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : M52

OUT

GND(+)

OUT

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

0.5

Each lead has same dimensions

0.13

0.1Min.

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.C

DTB723YE / DTB723YM

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

R2/R

zElectrical characteristic curves

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

Min.

−

−2.5

−

−

−

140

I

−

1.54

1

3.6

1

Typ. Max. Unit Conditions

−

−

−70

−

−

−

260

2.2

4.5

−0.3

−

−300

−3.0

−500

−

−

2.86

5.5

MHz

CC

= −5V, IO= −100µA

V

V

O

= −0.3V, IO= −20mA

V

mV

I

O/II

= −50mA / −2.5mA

mA

I

= −5V

V

nA

V

CC

= −30V, VI=0V

−

O

= −2V, IO= −100mA

V

CE

= −10V, IE=5mA, f=100MHz

V

kΩ

−

−−

Data Sheet

200

180

160

140

120

100

80

60

40

OUTPUT CURRENT : IO (mA)

20

1000

I

100

10

DC CURENT GAIN : G

℃

Ta=25

0

0 0.5 1 1.5 2

OUT PUT VOLT AGE : V

Fi g.1 Output Curr ent vs. Output Vol tage

Ta= 125

℃
　　　　85℃
　　　　25℃

　　　－40℃

1

0.01 0.1 1 10 100 1000

OUTPUT CURENT : I

O

(V)

O

VO=5V

(mA)

Ii=1.0mA
Ii=0.9mA
Ii=0.8mA
Ii=0.7mA

Ii=0.6mA

Ii=0.5mA

Ii=0.4mA

Ii=0.3mA

Ii=0.2mA

Ii=0.1mA
Ii=0mA

10

Ta=－40

℃
　　　　25℃
　　　　85℃

125

℃

1

INPUT VOLTAGE : Vin (V)

0.1
1 10 100 1000

OUTPUT CURRENT : I

Fi g.2 Input V oltag e vs. Output C urrent Fi g.3 Output Curr ent vs. I nput Voltag e

1

Ta= 125

℃
　　　　85℃
　　　　25℃

(on) (V)

O

　　　－40℃

0.1

OUT PUT VOLT AGE : V

0.01
1 10 100 1000

OUTPUT CURRENT : I

V0=0.3V

(mA)

O

IO/II = 20/ 1

(mA)

O

100

VCC=5V

10

(mA )

O

1

0.1

OUTPUT CURRENT : I

0.01

00.511.52

INPUT VOLTAGE : Vin(off) (V)

Ta= 125

85℃
　　　　25℃

　　　－40℃

℃

Fi g.4 D C Cur rent Gai n vs. Output Curr ent Fi g.5 Output Voltag e vs. Output Curr ent

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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.C