ROHM DTB543ZE Technical data
Transistors
DTB543ZE / DTB543ZM
-500mA / -12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTB543ZE / DTB543ZM
zApplications
Inverter, Interface, Driver
zFeature
CE (sat) is lower than conventional product s.
1) V
2) Built-in bias resistors enable the co nfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of t hin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the devi ce design easy.
zStructure
PNP epitaxial pla nnar silicon transistor
(Resistor built-in type)
zAbsolute maximum ratings (Ta=25°C) zPackaging specifications
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Symbol
V
CC
IN
V
∗1
C (max)
I
∗2
P
D
Tj
Tstg
Limits
DTB543ZE DTB543ZM
−12
−12 to +5
−500
150
150
−55 to +150
zElectrical characteristics (T a=25°C) zEquivalent circuit
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
f
Min.
Typ. Max. Unit Conditions
−
−
−2.5
−
I
I
−
−
140
I
T
−
3.29
1
8.0
1
−60
260
4.7
10
−0.3
−
−
−
−
V
−
mV
−300
mA
−1.4
µA
−0.5
−
−
MHz
−
6.11
kΩ
12
−−
zDimensions (Unit : mm)
DTB543ZE
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTB543ZM
VMT3
Unit
V
V
mA
mW
Part No.
DTB543ZE
DTB543ZM
C
C
V
CC
= −5V, IO= −100µA
O
= −0.3V, IO= −20mA
V
I
O/II
= −100mA / −5mA
I
= −5V
V
V
CC
= −12V, VI=0V
O
= −2V, IO= −100mA
V
V
CE
= −10V, IE=5mA, f=100MHz
−
1.6
0.3
(3)
(2)
0.2
0.5
0.5
1.0
Abbreviated symbol : Y13
0.32
(3)
(1)
0.22
0.40.4
Abbreviated symbol : Y13
Package
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
0.7
0.55
1.6
0.8
(1)
0.2
0.15
Each lead has same dimensions
1.2
0.2
1.2
0.8
(2)
0.8
0.13
0.2
0.5
Each lead has same dimensions
IN
IN
R1=4.7kΩ / R2=47kΩ
(1) GND
0.1Min.
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
EMT3 VMT3
TL
3000
R
1
R
2
−
GND(+)
T2L
8000
−
OUT
GND(+)
OUT
Rev.A 1/2
Transistors
zElectrical characteristic curves
200
180
Ta=25
℃
160
(mA)
O
140
120
100
80
60
40
OUTPUT CURRENT : I
20
0
0 0.2 0.4 0.6 0.8 1
OUTPUT VOLTAGE : V
Fig.1 Output Current vs. Output Voltage
O
(V)
Ii=1.0mA
Ii=0.9mA
Ii=0.8mA
Ii=0.7mA
Ii=0.6mA
Ii=0.5mA
Ii=0.4mA
Ii=0.3mA
Ii=0.2mA
Ii=0.1mA
Ii=0mA
100
V0=0.3V
Ta=－40
10
1
INPUT VOLTAGE : Vin (V)
0.1
0.01 1 100
℃
25℃
85℃
125
℃
OUTPUT CURRENT : I
O
Fig.2 Input Voltage vs. Output Current
DTB543ZE / DTB543ZM
100
VCC=5V
10
(mA)
O
1
0.1
OUTPUT CURRENT : I
0.01
00.511.52
(mA)
INPUT VOLTAGE : Vin(off) (V)
Fig.3 Output Current vs. Input Voltage
Ta=125
℃
85℃
25℃
－40℃
1000
I
100
10
DC CURENT GAIN : G
1
0.01 0.1 1 10 100 1000
OUTPUT CURENT : I
VO=5V
Ta=125
85℃
25℃
－40℃
(mA)
O
℃
1
IO/II = 20/1
(on) (V)
OUTPUT VOLTAGE : V
O
0.01
Ta=125
℃
85℃
25℃
0.1
－40℃
0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)
Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current
Rev.A 2/2
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