ROHM DTB543EE, DTB543EM Technical data

Transistors

DTB543EE / DTB543EM

-500mA / -12V Low V

CE

(sat) Digital transistors

(with built-in resistors)

DTB543EE / DTB543EM

zApplications

Inverter, Interface, Driver

zFeature

CE (sat) is lower than conventional product s.

1) V

2) Built-in bias resistors enable the co nfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).

3) The bias resistors consist of t hin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for

operation, making the devi ce design easy.

zStructure

PNP epitaxial planna r silicon transistor
(Resistor built-in type)

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1

C (max)

I

∗2

P

D

Tj

Tstg

Limits

DTB543EE DTB543EM

−12

−12 to +10

−500

150
150

−55 to +150

zElectrical characteristics (T a=25°C) zEquivalent circuit

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

V
V

V

O(on)

I

O(off)

G

R

R2/R

I(off)

I(on)

I

f

I

I

T

1

1

Typ. Max. Unit Conditions

Min.

−

−2.5

−

−

−

115

−

3.29

0.8

−60

260

4.7

1.0

−

−0.5

−

−

−300

−

−1.4

−

−0.5

−

−

−

6.11

1.2

V

CC

V

O

= −0.3V, IO= −20mA

V

mV

I

O/II

mA

I

= −5V

V

µA

V

CC

−

O

= −2V, IO= −100mA

V

MHz

V

CE

kΩ

−−

zDimensions (Unit : mm)

DTB543EE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTB543EM

VMT3

Unit

V
V

mA

mW

C

Part No.
DTB543EE
DTB543EM

C

= −5V, IO= −100µA

= −100mA / −5mA

= −12V, VI=0V

= −10V, IE=5mA, f=100MHz

−

1.6

0.3

(3)

(2)

0.2

0.5

0.5

1.0

Abbreviated symbol : X13

0.32

(3)

(1)

0.22

0.40.4

Abbreviated symbol : X13

Package

0.7

0.55

1.6

0.8

(1)

0.2

0.15

Each lead has same dimensions

1.2

0.2

1.2

0.8

(2)

0.8

0.13

0.2

0.5

Each lead has same dimensions

(1) GND

0.1Min.

(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

EMT3 VMT3

Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

TL

3000

−

R

1

IN

R

2

IN

GND(+)

R1=4.7kΩ / R2=4.7kΩ

T2L

8000

−

OUT

GND(+)

OUT

Rev.A 1/2

Transistors

zElectrical characteristics curves

160

℃

Ta=25

140
120
100

80
60
40
20

OUTPUT CURRENT : Io (mA)

0

0 0.2 0.4 0.6 0.8 1

OUTPUT VOLTAGE : Vo (V)

Ii=1.0mA
Ii=0.9mA

Ii=0.8mA
Ii=0.7mA

Ii=0.6mA
Ii=0.5mA
Ii=0.4mA

Ii=0.3mA

Ii=0.2mA

Ii=0mA

100

V0=0.3V

Ta=－40

℃

　　　　25℃

10

　　　　85℃

125

℃

1

INPUT VOLTAGE : Vin (V)

0.1

0.01 1 100
OUTPUT CURRENT : I

DTB543EE / DTB543EM

(mA)

O

100

Ta=125

　　　　85℃

(mA)

10

O

　　　　25℃

　　　－40℃

1

0.1

OUTPUT CURRENT : I

0.01

00.511.52
INPUT VOLTAGE : Vin(off) (V)

VCC=5V

℃

Fig.1 Output Current vs. Output Voltage

1000

Ta=125

I

100

10

DC CURENT GAIN : G

1

0.01 0.1 1 10 100 1000

℃
　　　　85℃
　　　　25℃
　　　－40℃

OUTPUT CURENT : I

(mA)

O

VO=5V

Fig.2 Input Voltage vs. Output Current

1

IO/II = 20/1

Ta=125

(on) (V)

O

0.1

OUTPUT VOLTAGE : V

0.01
1 10 100 1000

OUTPUT CURRENT : IO (mA)

℃
　　　　85℃
　　　　25℃
　　　－40℃

Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current

Fig.3 Output Current vs. Input Voltage

Rev.A 2/2