ROHM DTB523YE, DTB523YM Technical data

R

-500mA / -12V Low V

(sat) Digital transistors

CE

(with built-in resistors)

DTB523YE / DTB523YM

Applications Dimensions (Unit : mm)
Inverter, Interface, Driver

Feature

1) V

CE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

Structure

PNP epitaxial plannar silicon transistor
(Resistor built-in type)

Packaging specifications

EMT3 VMT3

TL

3000

T2L

8000

−

−

Part No.
DTB523YE
DTB523YM

Package
Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

Absolute maximum ratings (Ta=25C) Inner circuit

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1
∗2

C (max)

I

P

D

Tj

Tstg

DTB523YE DTB523YM

Limits

−12

−12 to +5

−500

150
150

−55 to +150

Unit

V
V

mA

mW

C
C

DTB523YE

0.2

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTB523YM

VMT3

R

1

IN

R

2

IN

GND(+)

1

=2.2kΩ / R2=10kΩ

1.6

0.3

(3)

(2)

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : X53

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : X52

OUT

GND(+)

OUT

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

0.5

Each lead has same dimensions

0.13

0.1Min.

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

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2010 ROHM Co., Ltd. All rights reserved.

2010.01- Rev.C

DTB523YE / DTB523YM

Electrical characteristics (Ta=25C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

R2/R

Electrical characteristics curves

100

Ta=－40

℃

　　　　25℃

(on) (V)

I

　　　　85℃

10

125

℃

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

I

1

1

V0= -0.3V

Min.

−

−2.5

−

−

−

140

−

1.54

3.6

Typ. Max. Unit Conditions

−

−

−60

−

−

−

260

2.2

4.5

−0.3

−

−300

−3.0

−0.5

−

−

2.86

5.5

MHz

100

(mA)

O

10

CC

= −5V, IO= −100μA

V

V

O

= −0.3V, IO= −20mA

V

mV

I

O/II

= −100mA / −5mA

mA

I

= −5V

V

μA

V

CC

= −12V, VI=0V

−

O

= −2V, IO= −100mA

V

CE

= −10V, IE=5mA, f=100MHz

V

kΩ

−

−−

VCC= -5V

Data Sheet

1

INPU T VOLTAGE : V

0.1

0.01 0.1 1 10 100 1000

OUTPUT CURRENT : I

1000

Ta= 125

℃

I

DC CURENT GAIN : G

85℃
　　　　25℃

　　　－40℃

100

10

1

0.1 1 10 100 1000
OUTPUT CURENT : I

O

(mA)

O

(mA)

VO= -2V

1

OUTPUT CURRENT : I

0.1
0 0.2 0.4 0.6 0.8 1 1. 2 1.4

INPU T VOLTAGE : V

1

Ta= 125

(on) (V)

O

0.1

OUT PUT VOLT AGE : V

0.01
1 10 100 1000

℃
　　　　85℃
　　　　25℃

　　　－40℃

OUOPUT CURRENT : I

Ta= 125

85℃
　　　　25℃

　　　－40℃

(off) (V)

I

O

(mA)

℃

IC/II=20

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2010 ROHM Co., Ltd. All rights reserved.

2010.01- Rev.C