ROHM DTB513ZE, DTB513ZM Technical data

DTB513ZE / DTB513ZM

z

z

z

z

z

z

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Transistors

-500mA / -12V Low VCE(sat) Digital transistors
(with built-in resistors)

DTB513ZE / DTB513ZM

Applications

Inverter, Interface, Driver

Feature

CE (sat) is lower than conventional product s.

1) V

2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for

operation, making the devi ce design easy.

Structure

PNP epitaxial planna r silicon transistor
(Resistor built-in type)

zDimensions (Unit : mm)

DTB513ZE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTB513ZM

VMT3

1.6

0.3

(3)

(2)

(1)

0.2

0.2

0.5

0.5

1.0

Abbreviated symbol : Y11

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : Y11

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

Each lead has same dimensions

(1) GND

0.1Min.

(2) IN
(3) OUT

(1) IN

0.13

0.5

(2) GND
(3) OUT

Absolute maximum ratings (Ta=25qC)

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

z

Electrical characteristics (Ta=25qC)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

Symbol

∗1

C (max)

I

∗2

DTB513ZE DTB513ZM

CC

V

V

IN

P

D

Tj

Tstg

Min.

V

I(off)

−

V

I(on)

−2.5

V

O(on)

−

I

I

−

I

O(off)

−

140

G

I

f

T

−

0.7

R

1

8.0

R2/R

1

Limits

−12

−10 to +5

−500

150
150

−55 to +150

Unit

V
V

mA

mW

C
C

Typ. Max. Unit Conditions

V

CC

=−5V, IO=−100μA

V

V

O

=−0.3V, IO=−20mA

mV

I

O/II

=−100mA / −5mA

mA

I

= −5V

V

μA

V

CC

=−12V, VI=0V

−

O

=−2V, IO=−100mA

V

MHz

CE

=−10V, IE=5mA,f=100MHz

V

kΩ

−

−−

−60

260

1.0
10

−0.3

−

−

−

−300

−6.4

−

−0.5

−

−

−

−

1.3
12

Packaging specifications

Package
Packaging type Taping Taping

Code

Basic ordering

Part No.

unit (pieces)

DTB513ZE
DTB513ZM

Equivalent circuit

IN

IN

R1=1.0kΩ / R2=10kΩ

EMT3 VMT3

TL

3000

−

R

1

R

2

T2L

8000

−

OUT

GND(+)

OUT

GND(+)

Rev.A!!!!1/2

Transistors

z

‑

‑

Electrical characteristic curves

I

=4.5mA

=5mA

I

I

500

Ta=25

450
400
350

(mA)

O

300
250
200
150
100

50

OUTPUT CURRENT : I

℃

pulsed

0

012

OUTPUT VOLTAGE : VO(V)

Fig.1 Output Current vs. Output Voltage

I

=4mA

I

I

I

=3.5mA

I

=3mA

I

I

I

=2.5mA

I

I

=2mA

I

=1.5mA

I

I

=1mA

I

I

I

=0.5mA

I

I

=0

I

10

Vo=0.3V

pulsed

(on) (V)

I

1

INPUT VOLTAGE : V

0.1

0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)

Ta=-40
Ta=25
Ta=125

Fig.2 Input Voltage vs. Output Current

DTB513ZE / DTB513ZM

100

VCC=5V

pulsed

10

(mA)

O

℃

℃

1

0.1

OUTPUT CURRENT : I

0.01

00.511.52
INTPUT VOLTAGE : VI(off) (V)

Fig.3 Output Current vs. Input Voltage

Ta=125
Ta=25
Ta=-40

℃

℃

℃

1000

VO=5V

Ta=125

pulsed

I

100

10

DC CURRENT GAIN : G

1

0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)

℃

Ta=-40

Ta=25

℃

℃

Fig.4 DC Current Gain vs. Output Current

1

IO/II=20/1

pulsed

(on) (V)

O

0.1

OUTPUT VOLTAGE : V

0.01
1 10 100 1000

Ta=125

℃

Ta=25

Ta=-40

℃

‑

OUTPUT CURRENT : IO (mA)

‑

℃

Fig.5 Output Voltage vs. Output Current

Rev.A!!!!2/2