ROHM DTB133HS, DTB133HK Datasheet
DTB133HK / DTB133HS
Transistors
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
Features
!!!!
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
Absolute maximum ratings
!!!!
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
DTB133HK
DTB133HS
(Ta = 25°C)
CC
V
V
I
I
C
Pd
Tj
Tstg
Limits
−50
−20
6
−500
200
300
150
−55~150
Unit
V
V
mA
mW
°C
°C
External dimensions
!!!!
DTB133HK
)
3
(
0.4
1.6
2.8
0.15
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
DTB133HS
3
)
15Min.
(
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
42
0.45
2.5
5
(Units : mm)
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.1
0.8
0to0.1
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
3Min.
0.45
0.5
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Package, marking, and packaging specifications
!!!!
Part No. DTB133HK
Package
Marking
Packaging code
Basic ordering unit (pieces)
Electrical characteristics
!!!!
SMT3
G98
T146
3000
(Ta = 25°C)
DTB133HS
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device.
∗
I(off)
V
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2/R1
f
T
-
−2- - VO = −0.3V , IO = −20mA
-
-
-
56
2.31
2.4 3 3.7 - -
-
SPT
TP
5000
Circuit schematic
!!!!
R
1
IN
R
-
−0.3
−0.1
3.3
200
-
−0.3
−2.4
-
−0.5
-
-
4.29
V
V
mA
µA
-
kΩ
MHz
-
2
IN
V
CC
= −5V , IO = −100µA
I
O
= −50mA , II = −2.5mA
V
I
= −5V
V
CC
= −50V , VI = 0V
I
O
= −50mA , VO = −5V
V
CE
= −10V , IE = 5mA , f = 100MHz
GND (+)
OUT
GND (+)
OUT
-
∗
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