ROHM DTB113ZK Technical data
-500mA / -50V Digital transistors
(with built-in resistors)
DTB113ZK
z Applications z Dimensions (Unit : mm)
Inverter, Interface, Driver
DTB113ZK
z Feature
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
esistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
ROHM : SMT3
EIAJ : SC-59
operation, making the device design easy.
z Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
z Packaging specifications zInner circuit
SMT3
T146
3000
R
1
IN
R
2
IN
Part No.
DTB113ZK
Package
Packaging type Taping
Code
Basic ordering
unit (pieces)
z Absolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
IN
V
C
I
P
D
Tj
Tstg
Limits
DTB113ZK
−50
−10 to +5
−500
200
150
−55 to +150
Unit
V
V
mA
mW
C
C
R1=1.0kΩ, R2=10kΩ
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : G11
OUT
GND(+)
OUT
GND(+)
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
0.3Min.
(1) GND
(2) IN
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
z Electrical characteristics (Ta=25°C)
Parameter Symbol
Input voltage
Output voltage
V
V
V
Input current
Output current
I
DC current gain
Input resistance
Resistance ratio
R2/R
Transition frequency
Characteristics of built-in transistor
∗
z Electrical characteristics curves
-100
-50
)
V
(
-20
I (on)
-10
-5
Ta= −40 C
25 C
-2
100 C
-1
-500m
INPUT VOLTAGE : V
-200m
-100m
-1m-500µ -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
VO= −
O
(
-1
-500m
V)
(
-200m
O (on)
-100m
OUTPUT VOLTAGE : V
Ta=100 C
25 C
−40 C
-50m
-20m
-10m
-5m
-2m
-1m
-1m
-2m -5m -10m -20m -50m-100m-200m -500m
-500µ
OUTPUT CURRENT : I
O
Fig.4 Output voltage vs. output
current
I(off)
I(on)
O(on)
I
O(off)
G
R
f
T
A)
lO/lI=20
(
A)
Min.
−
−3
−
I
−
−
56
I
0.7
1
8
1
∗
−
0.3V
Typ. Max. Unit Conditions
−
−0.3
−
−
−0.1
−0.3
−
−7.2
−
−
−0.5
−
−
1
1.3
10
12
200
−
-10m
-5m
-2m
A)
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
OUTPUT CURRENT : Io (
-5µ
-2µ
-1µ
MHz
CC
= −5V, IO= −100µA
V
V
O
= −0.3V, IO= −20mA
V
V
I
O/II
= −50mA/−2.5mA
mA
I
= −5V
V
µA
CC
= −50V, VI=0V
V
V
O
= − 5V, IO= −50mA
−
kΩ
−
V
CE
= −10V, IE=50mA, f=100MHz
Ta=100 C
25 C
−
40 C
-0.5 -1.0 -1.5 -2.0 -2.5 -3.00
INPUT VOLTAGE : V
I (off)
VCC= −
(
V)
−
−
5V
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
I
Ta=100 C
200
25 C
−40 C
100
50
20
10
5
DC CURRENT GAIN : G
2
1
-1m
-2m -5m -10m -20m -50m-100m-200m -500m
-500µ
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
Data Sheet DTB113ZK
VO= −5V
O
(
A)
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2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
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