ROHM DTB113ZK, DTB113ZS Schematic [ru]

DTB113ZK / DTB113ZS

Transistors

Digital transistors (built-in resistors)

DTB1 13ZK / DTB113ZS

zFeature zExternal dimensions (Unit : mm)

1) Built-in bias resistors enable the
configuration of an inverter circuit

DTB113ZK

without connecting external input
resistors (see equivalent circuit).

2) The bias resistors consist of thin­ film resistors with complete isola­ tion to allow positive biasing of the
input. They also have the advan­ tage of almost completely eliminat-

ROHM : SMT3
EIAJ : SC-59

ing parasitic effects.

3) Only the on / off conditions need to
be set for operation, making device

DTB113ZS

design easy.

zStructure

PNP digital transistor
(Built-in resistor type)

ROHM : SPT
EIAJ : SC-72

zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit

Parameter

Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature

Symbol

CC

V

IN

V

C

I

Pd

Tj

Tstg

Limits(DTB113Z )

KS

−50

−10 to +5

−500

200 300

150

−55 to +150

+

2.9 0.2

−
+

1.9 0.2

−

0.95

0.95
(2)

(1)

+

−

−0.1

+0.2

2.8 0.2

1.6

(3)

+0.1

0.4

All terminals have same dimensions

−0.05

Addreviated symbol : G11

+

4 0.2

−

+

−

3 0.2

(15Min.)

5

0.45

2.5

(1)

(2) (3)

+0.4

−0.1

3Min.

+0.15

−0.05

Unit

V
V

mA

mW

C
C

IN

0.15

+0.2

1.1

−0.1

+

0.8 0.1

−

0∼0.1

+0.1

−0.06

+

2 0.2

−

+0.15

0.45

0.5

−0.05

R

1

R

2

IN

(1) GND

0.3∼0.6

(2) IN
(3) OUT

(1) GND
(2) OUT
(3) IN

OUT

GND(+)

OUT

GND(+)

1/2

DTB113ZK / DTB113ZS

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Input resistance
Resistance ratio

R2/R

Transition frequency

Transition frequency of the device

∗

zPackaging specifications

Package
Packaging type Taping Taping

Code

Basic ordering

Part No.

unit (pieces)

DTB113ZK
DTB113ZS

zElectrical characteristics curves

-100

-50

)

V

(

-20

I (on)

-10

-5
Ta= −40 C

25 C

-2

100 C

-1

-500m

INPUT VOLTAGE : V

-200m

-100m

-1m-500µ -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

-1

-500m

V)

(

O (on)

OUTPUT VOLTAGE : V

Ta=100 C

-200m

-100m

-50m

-20m

-10m

-5m

-2m

-1m

-500µ

25 C

−40 C

-1m

-2m -5m -10m -20m -50m-100m-200m -500m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

VO= −0.3V

O

(

A)

O

(

A)

lO/lI=20

Min.

I(off)

I(on)

O(on)

O(off)

G

R

f

−

−3

−

I

I

−

−

56

I

0.7

1

8

1

T

−

SMT3 SPT

T146

3000

−

Typ. Max. Unit Conditions

−

−

−

−



−

−

1

10

200

−0.3

−

−0.3

−7.2

−0.5

−

1.3
12

−

MHz

CC

= −5V, IO= −100µA

V

V

O

= −0.3V, IO= −20mA

V

V

I

O/II

= −50mA/−2.5mA

mA

I

= −5V

V

µA

V

CC

= −50V, VI=0V

O

= − 5V, IO= −50mA

−

V

kΩ

−−

V

CE

= −10V, IE=50mA, f=100MHz

TP

5000

−

-10m

-5m

-2m

A)

-1m

-500µ

-200µ

-100µ

-50µ

-20µ

-10µ

OUTPUT CURRENT : Io (

-5µ

-2µ

-1µ

Ta=100 C

−

-0.5 -1.0 -1.5 -2.0 -2.5 -3.00
INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

25 C
40 C

I (off)

VCC= −

(

V)

5V

−

∗

1k

500

I

Ta=100 C

200

25 C

−40 C

100

50

20
10

5

DC CURRENT GAIN : G

2
1

-1m

-2m -5m -10m -20m -50m-100m-200m -500m

-500µ
OUTPUT CURRENT : I

Fig.3 DC current gain vs. output

current

O

VO= −5V

(A)

2/2