ROHM DTA144VKA, DTA144VSA Schematic [ru]

DTA144VKA / DTA144VSA

Transistors

Digital transistor (built-in resistors)

DTA144VKA / DTA144VSA

zFeatures

1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.

2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive bia sing o f the inpu t,
and parasitic effects are almost completely eliminated.

3) Only the on / off conditions need to be set for
operation, making device design easy.

4) Higher mounting densities can be achieved.

zEquivalent circuit

R

1

IN

R

2

IN

GND(+)

OUT

GND(+)

OUT

zExternal dimensions (Unit : mm)

DTA144VKA

ROHM : SMT3
EIAJ : SC-59

DTA144VSA

ROHM : SPT
EIAJ : SC-72

0.4

0.15

0.3Min.

3

)

15Min.

(

(1) (2) (3)

)

1

(

1.9

)

2

)

(

3

(

42

5

0.95 0.95

1.6

2.8

0.8

0~0.1

Each lead has same dimensions

3Min.

0.45

0.45

2.5

0.5

Taping specifications

1.1

2.9

(1) GND
(2) IN
(3) OUT

(1) GND
(2) OUT
(3) IN

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature

Storage temperature

DTA144VKA
DTA144VSA

V

CC

V
I

O

I

C(Max.)

Pd

Tj

Tstg

I

zPackaging, marking and p ackaging specifications

Type DTA144VKA
Package
Marking
Packaging code
Basic ordering unit (pieces)

SMT3

E56
T146
3000

Limits

−50

−40 to +15

−30

−100

200
300
150

−55 to +150

DTA144VSA

SPT

−

TP

5000

Unit

V
V

mA

mW

°C
°C

Rev.A 1/2

DTA144VKA / DTA144VSA

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Input voltage
Output voltage

Input current
Output current
DC current gain
Input resistance
Resistance ratio

Transition frequency

∗ Transition frequency of the device.

zElectrical characteristic curves

−100

−50

(V)

−20

(on)

I

−10

−5

−2

−1

INPUT VOLTAGE : V

−500m

−200m

−100m

−100µ−200µ−500µ−1m −2m −5m −10m−20m −50m −100m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. Output current
(ON characteristics)

Ta

=25°C

VO= −0.3V

O

(A)

−1

−500m

(V)

−200m

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ−200µ−500µ−1m −2m −5m −10m−20m −50m −100m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. Output current
characteristics

O

Ta
IO/II=20

(A)

=25°C

V
V

V

I

R

I(off)
I(on)

O(on)

I

O(off)

G
R

2/R1

f

T

I

I

1

−

−6 −− VO= −0.3V , IO= −2mA

−

−

−

33

32.9

0.17 0.21 0.26 −−

−

−10m

Ta

=25°C

−5m

V

CC

= −5V

−2m

(A)

O

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : I

−5µ

−2µ

−1µ

−1.5 −2 −2.5 −3 −3.5 −4.0 −4.5

−

−0.1

−

−

−

47

250

INPUT VOLTAGE : V

Fig.2 Output current vs. Input voltage
(OFF characteristics)

−1

−0.3

−0.16

−0.5

−

61.1

−

I

(off)

(V)

V

CC

V
V

mA

µA

−

kΩ

MHz

= −5V , IO= −100µA

I

O

= −10mA , II= −0.5mA

V

I

= −5V

CC

= −50V , VI=0V

V
I

O

= −5mA , VO= −5V

−

V

CE

= −10V , IE=5mA , f=100MHz

1000

500

I

200
100

50

20
10

DC CURRENT GAIN : G

5

2
1

−100µ−200µ−500µ−1m −2m −5m −10m−20m −50m −100m

OUTPUT CURRENT : I

O

(A)

Fig.3 DC current gain vs. Output current
characteristics

Ta

=25°C

VO= −5V

∗

Rev.A 2/2