ROHM DTA144TM, DTA144TE, DTA144TUA, DTA144TKA Technical data
-100mA / -50V Digital transistors
(with built-in resistor)
DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTA144TM
ROHM : VMT3
DTA144TUA
ROHM : UMT3
EIAJ : SC-70
Inner circuit
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.4 0.4
0.8
Abbreviated symbol : 96 Abbreviated symbol : 96
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 96 Abbreviated symbol : 96
0.13
0.2
0.5
0.9
0.7
0.2
2.1
1.25
0.15
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
0.1Min.
(3) Collector
DTA144TE
ROHM : EMT3
DTA144TKA
ROHM : SMT3
EIAJ : SC-59
(3)
0.2
2.9
(3)
(2)
0.95 0.95
1.9
1.6
0.3
(2)
(1)
0.2
0.5
0.5
1.0
0.4
0.7
0.55
1.6
0.8
0.15
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
(1) Emitter
0.1Min.
(2) Base
(3) Collector
(1) Emitter
(2) Base
0.3Min.
(3) Collector
B
R
1
C
E
B : Base
C : Collector
E : Emitter
R1=47kΩ
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Packaging specifications
Package
Packaging type TapingTaping Taping Taping
Code
Part No.
DTA144TM
DTA144TE
DTA144TUA
DTA144TKA
Basic ordering
unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
500
FE
200
100
DC CURRENT GAIN : h
Ta=100°C
25°C
50
20
10
5
2
1
−100μ−1m −10m−200μ−2m −20m−500μ−5m −50m−100m
−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain vs.collector
current
V
V
V
Pc
Tstg
CBO
CEO
EBO
I
C
Tj
C
VMT3
T2L
8000
−
−
−
VCE=−5V
(A)
TL
3000
−
−
−
DTA144TEDTA144TM DTA144TUA DTA144TKA
150 200
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
UMT3EMT3 SMT3
T106
T146
3000
3000
−
−
−
−
−
−
Limits
−50
−50
−5
−100
Unit
V
V
mA
mW
150
−55 to +150
Max.
Typ.
Min.
−50
−50
−5
−
−
−
100
32.9
−
(V)
−1
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−10μ−100μ−1m−20μ−200μ−2m−50μ−500μ−5m −10m
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
−
600
250
61.1
47
−
250
Ta=100°C
COLLECTOR CURRENT : I
°C
°C
Unit Conditions
V
I
C
=
V
I
C
=
V
I
E
=
μA
V
CB
μA
V
EB
V
C/IB
I
−
CE
V
kΩ
MHz
VCE=−10V, IE=5mA, f=100MHz
25°C
−40°C
Fig.2 Collector-emitter saturation
voltage vs.collector current
−50μA
−1mA
−50μA
=
−50V
=
−4V
=
−5mA/−0.5mA
=
−5V, IC=
lC/lB=10
C
(A)
Data Sheet DTA144TM / DTA144TE / DTA144TUA / DTA144TKA
−1mA
−
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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