ROHM DTA144TM, DTA144TE, DTA144TUA, DTA144TKA Technical data

-100mA / -50V Digital transistors

(with built-in resistor)

DTA144TM / DTA144TE / DTA144TUA / DTA144TKA

 Applications
Inverter, Interface, Driver

 Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)

 Dimensions (Unit : mm)

DTA144TM

ROHM : VMT3

DTA144TUA

ROHM : UMT3
EIAJ : SC-70

 Inner circuit

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

0.4 0.4

0.8

Abbreviated symbol : 96 Abbreviated symbol : 96

2.0

0.3

(3)

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 96 Abbreviated symbol : 96

0.13

0.2

0.5

0.9

0.7

0.2

2.1

1.25

0.15

Each lead has same dimensions

(1) Base
(2) Emitter
(3) Collector

(1) Emitter
(2) Base

0.1Min.

(3) Collector

DTA144TE

ROHM : EMT3

DTA144TKA

ROHM : SMT3
EIAJ : SC-59

(3)

0.2

2.9

(3)

(2)

0.95 0.95

1.9

1.6

0.3

(2)

(1)

0.2

0.5

0.5

1.0

0.4

0.7

0.55

1.6

0.8

0.15

1.1

0.8

1.6

2.8

(1)

0.15

Each lead has same dimensions

(1) Emitter

0.1Min.

(2) Base
(3) Collector

(1) Emitter
(2) Base

0.3Min.

(3) Collector

B

R

1

C

E

B : Base
C : Collector
E : Emitter

R1=47kΩ

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2009.06 - Rev.C

 Packaging specifications

Package

Packaging type TapingTaping Taping Taping

Code

Part No.

DTA144TM

DTA144TE

DTA144TUA

DTA144TKA

Basic ordering
unit (pieces)

 Absolute maximum ratings (Ta=25C)

Parameter Symbol

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

 Electrical characteristics (Ta=25C)

Parameter Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗ Characteristics of built-in transistor

 Electrical characteristic curves

1k

500

FE

200

100

DC CURRENT GAIN : h

Ta=100°C

25°C

50

20

10

5

2

1

−100μ−1m −10m−200μ−2m −20m−500μ−5m −50m−100m

−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain vs.collector

current

V

V

V

Pc

Tstg

CBO

CEO

EBO

I

C

Tj

C

VMT3

T2L

8000

−

−

−

VCE=−5V

(A)

TL

3000

−

−

−

DTA144TEDTA144TM DTA144TUA DTA144TKA

150 200

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

R

1

f

T

∗

UMT3EMT3 SMT3

T106

T146

3000

3000

−

−

−

−

−

−

Limits

−50

−50

−5

−100

Unit

V

V

mA

mW

150

−55 to +150

Max.

Typ.

Min.

−50

−50

−5

−

−

−

100

32.9

−

(V)

−1

−500m

CE(sat)

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

COLLECTOR SATURATION VOLTAGE : V

−10μ−100μ−1m−20μ−200μ−2m−50μ−500μ−5m −10m

−

−

−

−

−

−

−0.5

−

−0.5

−

−0.3

−

600

250

61.1

47

−

250

Ta=100°C

COLLECTOR CURRENT : I

°C

°C

Unit Conditions

V

I

C

=

V

I

C

=

V

I

E

=

μA

V

CB

μA

V

EB

V

C/IB

I

−

CE

V

kΩ

MHz

VCE=−10V, IE=5mA, f=100MHz

25°C

−40°C

Fig.2 Collector-emitter saturation

voltage vs.collector current

−50μA

−1mA

−50μA

=

−50V

=

−4V

=

−5mA/−0.5mA

=

−5V, IC=

lC/lB=10

C

(A)

Data Sheet DTA144TM / DTA144TE / DTA144TUA / DTA144TKA

−1mA

−

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2009.06 - Rev.C

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

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