ROHM DTA144GUA, DTA144GKA Technical data
DTA144GUA / DTA144GKA
Transistors
Digital transistors (built-in resistor)
DTA144GUA / DTA144GKA
zFeatures
1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation, making device design easy .
3) Higher mounting densities can be achieved.
zCircuit schematic
B
E : Emitter
C : Collector
B : Base
R
C
E
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CBO
V
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
zPackage, marking, and packaging specifications
Part No. DTA144GUA
Package
Marking
Packaging code
Basic ordering unit (pieces)
UMT3
K16
T106
3000
Limits
−50
−50
−5
−100
200
150
−55 to +150
DTA144GKA
SMT3
K16
T146
3000
Unit
V
V
V
mA
mW
C
C
Rev.A 1/2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Emitter-base resistance
Transition frequency
∗
Transition frequency of the device.
zElectrical characteristics curves
transfer ratio
1k
V
CE
=5V
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=25°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. Collector current
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
Ta=100°C
Ta= −40°C
C
(A)
−50
−50
−5
−
−65
−
68
32.9
−
DTA144GUA / DTA144GKA
Unit
I
−
−
−
−
−
−
−
47
250
−
−
−
−0.5
−130
−0.3
−
61.1
−
1
I
C/IB
=20/1
) (V)
500m
sat
(
CE
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
V
C
= −50µA
V
I
C
= −1mA
V
I
E
= −160µA
µA
V
CB
µA
V
EB
V
I
C
= −10mA , IB= −0.5mA
−
C
= −5mA , VCE= −5V
I
kΩ
MHz
V
CE
Ta=25°C
COLLECTOR CURRENT : I
= −50V
= −4V
= −10V , IE=5mA , f=100MHz
Ta=100°C
Ta= −40°C
C
(A)
Conditions
−
∗
Rev.A 2/2
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