ROHM DTA144EEB Schematic [ru]

DTA144EEB

Transistors

-100mA / -50V Digital transistors
(with built-in resistors)

DTA144EEB

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuratio n of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

zStructure zEquivalent circuit

PNP silicon epitaxial planar transistor type
(Resistor built-in)

zPackaging specifications

EMT3F

TL

3000

Part No.
DTA144EEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

LimitsParameter Symbol

−40

−55

−100 mAIc(max)

−50

to

−30
150
150

to

+10

+150

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recomended land

V

V

Io

P

Tj

Tstg

CC

IN

∗1

∗2

D

EMT3F

(1) IN
(2) GND
(3) OUT

IN

IN

R1=R2=47kΩ

Unit

V
V

mA

mW

°C
°C

1.6

0.26
(3)

0.37

1.6

0.86

(1) (2)

0.37

0.5 0.5

1.0

Abbreviated symbol : 16

R

1

R

2

OUT

GND(+)

OUT

GND(+)

0.7

0.45

0.13

Each lead has same dimensions

0.45

1/2

DTA144EEB

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol

V

Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

I(off)

V

I(on)

V

O(on)

I

I

O(off)

G

f

R

R2/R

I

I

∗

T

1

zElectrical characteristic curves

−100

−50

−20

(V)

I(on)

−10
Ta=−40°C

−5

25°C

100°C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

V

O

=−

O

(A)

−1

−500m

(V)

−200m

O(on)

−100m

OUTPUT VOLTAGE : V

Ta=100°C

25°C

−40°C

−50m

−20m

−10m

−5m

−2m

−1m

−100µ−1m −10m −100m−200µ−2m −20m-−500µ−5m −50m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

lO/lI=20

O

(A)

1

0.3V

Typ. Max. Unit Conditions

Min.

−

−

−

−3.0

−100

−

−

−

−

−

−

68

250

−

47

32.9
1

0.8

−10m

−5m

−2m

(A)

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : Io

−5µ

−2µ

−1µ
0 −3.0

−500

−

−300

−0.18

−500

−

−

61.1

1.2

V

CC

=−

5V

Ta=100°C

25°C

−40°C

−0.5 −1.0 −1.5 −2.0 −2.5

INPUT VOLTAGE : V

V

mV

CC

V

V

O

=−0.3V, IO=−2mA

mV

I

O

/ II=−10mA / −0.5mA

mA

V

I

=−5V

nA

V

CC

−

V

O

=−5V, IO=−5mA

V

MHz

CE

kΩ

−−

Fig.2 Output current vs. input voltage

(OFF characteristics)

=−5V, IO=−100µA

=−50V, VI=0V

=−10V, IE=5mA, f=100MHz

−

1k

500

Ta=100°C

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

I(off)

(V)

Fig.3 DC current gain vs. output

25°C

−40°C

OUTPUT CURRENT : I

current

V

O

(A)

O

=−

5V

2/2