ROHM DTA143XE, DTA143XKA, DTA143XM, DTA143XUA Schematic [ru]
100mA / 50V Digital transistors
(with built-in resistors)
DTA143XM / DTA143XE / DTA143XUA / DTA143XKA
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTA143XM
ROHM : VMT3
DTA143XUA
ROHM : UMT3
EIAJ : SC-70
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.4 0.4
0.8
Abbreviated symbol : 33 Abbreviated symbol : 33
2.0
0.3
(3)
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 33
0.13
0.2
0.5
Each lead has same dimensions Each lead has same dimensions
0.9
0.7
0.2
2.1
0.15
Each lead has same dimensions
(1) IN
(2) GND
(3) OUT
(1) GND
(2) IN
0.1Min.
(3) OUT
DTA143XE
ROHM : EMT3
DTA143XKA
ROHM : SMT3
EIAJ : SC-59
1.6
0.3
(3)
0.8
(2)
0.2
(1)
0.2
0.5
0.5
1.0
2.9
0.4
(3)
1.6
(2)
0.95 0.95
Abbreviated symbol : 33
(1)
1.9
1.6
2.8
Each lead has same dimensions
Packaging specifications Inner circuit
TL
−
−
−
UMT3EMT3 SMT3
T106
3000
T146
3000
−
−
−
−
−
−
R1
IN
R2
IN
R1=4.7kΩ, R2=10kΩ
Type
DTA143XM
DTA143XE
DTA143XUA
DTA143XKA
Package
Packaging type
Code
Basic ordering
unit (pieces)
VMT3
T2L
8000
−
−
−
TapingTaping Taping Taping
3000
0.15
0.7
0.55
1.1
0.15
GND(+)
(1) GND
(2) IN
0.1Min.
(3) OUT
0.8
(1) GND
(2) IN
0.3Min.
(3) OUT
OUT
GND(+)
OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
V
I
I
C(Max.)
Pd
Tj
Tstg
CC
I
O
Electrical characteristics (Ta=25C)
Parameter Symbol
V
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
T
I
1
Electrical characteristic curves
−
100
−50
−20
−10
I(on) (V)
−5
−2
−1
−
500m
INPUT VOLTAGE : V
−
200m
−
100m
−100μ−200μ−500μ−1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : I
Ta=−40°C
25°C
100°C
VO=−0.3V
O (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
−500m
−200m
−100m
OUTPUT VOLTAGE : VO(on) (V)
−50m
−20m
−10m
−5m
−2m
−1m
−1m −10m −100m−100μ−200μ−500μ−2m −5m −20m −50m
OUTPUT CURRENT : IO (V)
Ta=100°C
Fig.4 Output voltage vs. output
current
DTA143XEDTA143XM DTA143XUA DTA143XKA
−20 to +7
150 200
−55 to +150
Min.
Typ. Max. Unit Conditions
−
−2.5
−
−0.1
−
−
30
I
3.29
4.7
1.7
1
2.1
−
250
IO/II=20
25°C
−40°C
Limits
Unit
−50
−100
−100
mW
150
−
−0.3
−
−
−0.3
−
−1.8
−
−0.5
−
−
6.11
2.6
−
−10m
−5m
−2m
−1m
−500μ
−200μ
−100μ
−50μ
−20μ
−10μ
OUTPUT CURRENT : IO (A)
−5μ
−2μ
−1μ
V
CC
V
V
mA
μA
−
=−5V, IO=−100μA
V
O
=−0.3V, IO=−20mA
I
O/II
=−10mA/−0.5mA
V
I
=−5V
V
CC
=−50V, VI=0V
O
=−5V, IO=−10mA
V
kΩ
−−
V
CE
MHz
0 −3.0
=−10V, IE=5mA, f=100MHz∗
Ta=100°C
−
0.5
−1.0 −
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
V
mA
°C
°C
−40°C
1.5
25°C
−
−2.0 −
VCC=−5V
2.5
Data Sheet DTA143XM / DTA143XE / DTA143XUA / DTA143XKA
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
−100μ−200μ−500μ−1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : I
VO=−5V
Ta=100°C
−40°C
O
(V)
Fig.3 DC current gain vs. output
current
25°C
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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