ROHM DTA143TUB Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTA143T series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

lFeatures

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary NPN Types :DTC143T series

6) Complex transistors :EMB3 /UMB3N / IMB3A

lInner circuit

/EMA3 /UMA3N /FMA3A （PNP type）

7) Lead Free/RoHS Compliant.

lApplication

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications

8

3,000

93

DTA143TUB

UMT3F

2021

TL

180

8

3,000

93

DTA143TE

EMT3

1616

TL

180

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

3,000

93

DTA143TKA

SMT3

2928

T146

180

8

3,000

93

DTA143TUA

UMT3

2021

T106

180

8

DTA143TEB

EMT3F

1616

TL

180

3,000938

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTA143TM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

93

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Value

V

CEO

-50V

I

C

-100mA

R

1

4.7kW

DTA143TM

(SC-105AA)

DTA143TE

SOT-416 (SC-75A)

Collector

Base

Emitter

Collector

Base

Emitter

DTA143TKA

SOT-346 (SC-59)

DTA143TUA

SOT-323 (SC-70)

Collector

Base

Emitter

Collector

Base

Emitter

Collector

Base

Emitter

Collector

Base

Emitter

DTA143TUB

(SC-85)

DTA143TEB

(SC-89)

1/9

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA143T series

lAbsolute maximum ratings (Ta = 25C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

IC / IB= -5mA / -0.25mA

DC current gain

h

FE

VCE= -5V , IC= -1mA ,

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

IE= -50μA

Collector cut-off current

I

CBO

V

CB

= -50V

Emitter cut-off current

I

EBO

V

EB

= -4V

Emitter-base breakdown voltage

BV

EBO

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

-

3.29

4.7

6.11kW100

250

600mA-

-

-0.3

V--

-0.5

V--

-0.5mA-5

--V

Collector-emitter breakdown voltage

BV

CEO

IC= -1mA

V

-50--50

---

Collector-base breakdown voltage

BV

CBO

IC= -50μA

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

T

j

150

C

T

stg

-55 to +150

C

I

C

-100

mA

DTA143TM
DTA143TEB
DTA143TE

P

C

*2

150

mW

DTA143TUB
DTA143TUA
DTA143TKA

200

mW

V

CEO

-50

V

V

EBO

-5

V

Parameter

Symbol

Values

Unit

V

CBO

-50

V

2/9

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA143T series

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0

-20

-40

-60

-80

-100

0 -2 -4 -6 -8 -10

-250μA

0A

-300μA

-350μA

-400μA

-450μA

-500μA

-200μA

-100μA

IB=

-150μA

-50μA

Ta=25ºC

-0.001

-0.01

-0.1

-1

-10

0 -0.5 -1 -1.5 -2

VCE= -5V

Ta=100ºC

25

ºC

-40ºC

3/9

2012.04 - Rev.A