ROHM DTA143TEB Schematic [ru]

Transistors ! DTA143TEB

z

z

z

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z

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!!!!!!!!!!!!!!

-100mA / -50V Digit al transistors
(with built-in resistors)

DTA143TEB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

EMT3F

Features

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

PNP silicon epitaxial planar transistor type
(Resistor built-in)

Packaging specifications

EMT3F

TL

3000

Part No.
DTA143TEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

1.6

(1) Base
(2) Emitter
(3) Collector

Equivalent circuit

B

R1

B : Base
C : Collector
E : Emitter

1

=4.7kΩ

R

1.6

0.26
(3)

0.37

0.86

(1) (2)

0.37

0.5 0.5

1.0

Abbreviated symbol : 93

0.7

0.45

0.13

Each lead has same dimensions

0.45

C

E

z

Absolute maximum ratings (T a=25qC)

Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Power dissipation
Junction temperature
Range of Storage temperature

∗1 Each terminal mounted on a recommended land

V

V

Tstg

P

CBO

CEO

EBO

I

Tj

LimitsParameter Symbol

−50

−50

−5VV

C

∗1

D

−100
150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

1/2

Transistors ! DTA143TEB

z

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!!!!!!!!!!!!!!

Electrical characteristics (Ta=25qC)

Parameter Symbol

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

∗ Characteristics of built-in transistor

z

Electrical characteristic curves

1k

500

FE

200
100

50

20
10

DC CURRENT GAIN : h

−100μ−1m −10m−200μ−2m −20m−500μ−5m −50m −100m

Ta=100°C

25°C

−40°C

5

2
1

COLLECTOR CURRENT : I

Fig.1

DC current gain vs. collector

C

current

V

(A)

BV
BV
BV

V

CE

=−

5V

CEO

CBO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

T

f
R

Min.

∗

3.29

Typ. Max. Unit Conditions

C

=

−50

−

−

−50

−

−

−5

−

−

−

−

−

−

−

−

100

250

−

250

4.7

−1

(V)

−500m

CE(sat)

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−100μ−1m

−200μ−2m

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

nA

−500
nA

−500

−0.3

600

MHz

−

kΩ

6.11 −

Ta=100°C

25°C

−40°C

−500μ−5m

−1mA

VI

I

C

=

−50μA

V

E

=

−50μA

I

V

V

CB

EB

V

V

I

C/IB

I

−

C

=

−1mA, V

V

CE

−10m

Fig.2 Collector-emitter saturation

voltage vs. collector current

=

−50V

=

−4V

=

−5mA/−0.25mA

CE

=

−5V

=

−

10V, IE=5mA, f=100MHz

lC/lB=20

−20m

−50m−100m

(A)

C

2/2