ROHM DTA143EUB Schematic [ru]

Transistors DTA143EUB

-100mA / -50V Digital transistors (with built-in resistors)

DTA143EUB

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuratio n of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

zStructure zEquivalent circuit

PNP silicon epitaxial planar transistor type
(Resistor built-in)

zPackaging specifications

UMT3F

TL

3000

Part No.
DTA143EUB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature

Characteristics of built-in transistor

∗1
∗2

Each terminal mounted on a recommended land

V

V

I

C(max.)

I

P

Tj

Tstg

CC

IN

∗1

O

∗2

D

−50

−30 to +10

−100

−100

200
150

−55 to +150

UMT3F

(1) IN
(2) GND
(3) OUT

0.4250.425

2.1

1.25

R

IN

1

R

IN

R1=R2=4.7kΩ

UnitLimits

V

V
mA
mA
mW

°C
°C

2.0

0.32
(3)

(1) (2)

0.65 0.65

1.3

Abbreviated symbol : 13

2

GND(+)

0.9

0.530.53

0.13

Each lead has same dimensions

OUT

GND(+)

OUT

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Transistors DTA143EUB

zElectrical characteristics (T a=25°C)

Parameter Symbol

I(off)

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

V
V

V

O(on)

I

O(off)

G

R

R2/R

I(on)

I

f

I

I

T

1

1

zElectrical characteristic curves

−100
50

−

−

20

(V)

I(on)

−

10

Ta=−40°C

−

5

25°C

100°C

−

2

−

1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

−200m

(V)

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

Ta=100°C

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

25°C

−40°C

VO=−0.3V

O

(A)

lO/lI=20

(A)

O

∗

Typ. Max. Unit Conditions

Min.

V

−

−3.0

−

−

−

30

−

3.29

0.8

−10m

−5m

−2m

(A)

−1m

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

OUTPUT CURRENT : Io

−0.5

−

−

−

−300

−100

−1.8

−

−500

−

−

−

−

250

6.11

4.7

1.2

1.0

Ta=100°C

25°C

−40°C

−5µ

−2µ

−1µ
0 −3.0

−0.5 −1.0 −1.5 −2.0 −2.5

INPUT VOLTAGE : V

CC

V

V

O

=−0.3V, IO=−5mA

O

=−10mA, II=−0.5mA

mV

I
V

mA

I

=−5V

nA

V

CC

−

O

=−5V, IO=−10mA

V

MHz

CE

V

kΩ

−−

I(off)

Fig.2 Output current vs. input voltage

(OFF characteristics)

=−5V, IO=−100µA

=−50V, VI=0V

=−10V, IE=5mA, f=100MHz

−

1k

VCC=−5V

500

I

200
100

50

20
10

DC CURRENT GAIN : G

5
2

1

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

(V)

Fig.3 DC current gain vs. output

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

current

O

(A)

VO=−5V

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