ROHM DTA143EE, DTA143EKA, DTA143EM, DTA143ESA, DTA143EUA Schematic [ru]

DTA143EM / DTA143EE / DTA143EUA

z

z

z

z

Transistors DTA143EKA / DTA143ESA

-100mA / -50V Digital transistors
(with built-in resistors)

DTA143EM / DTA143EE / DT A143EUA /
DTA143EKA / DTA143ESA

Applications

Inverter, Interface, Driver

Features

1) Built-in bias resistors enable the co nfiguration of an inverter circuit without connecting external input resistors (see
equivalent circuit).

2) The bias resistors consist of thin-film resist ors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

Structure

PNP epitaxial planar silicon transistor (Resistor built-in type)

External dimensions (Unit : mm)

DTA143EM

ROHM : VMT3

DTA143EUA

ROHM : UMT3
EIAJ : SC-70

DTA143ESA

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : 13

2.0

0.3

(3)

1.25

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 13

4.0 2.0

3.0
3Min.

0.45

(15Min.)

DTA143EE

0.2

1.2

0.8

0.13

0.2

0.5

0.9

0.7

0.2

2.1

0.15

(1) IN
(2) GND
(3) OUT

0.1Min.

(1) GND
(2) IN
(3) OUT

ROHM : EMT3

DTA143EKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

(2)

0.2

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : 13

2.9

0.4

(3)

(2)

0.95 0.95

1.9

Abbreviated symbol : 13

0.7

0.55

1.6

0.8

0.15

0.1Min.

(1) GND
(2) IN
(3) OUT

1.1

0.8

1.6

2.8

(1)

0.15

(1) GND

0.3Min.

(2) IN
(3) OUT

ROHM : SPT
EIAJ : SC-72

2.5

5.0

(1) (2) (3)

Abbreviated symbol : A143ES

0.45

0.5

(1) GND
(2) OUT
(3) IN

Rev.B 1/3

DTA143EM / DTA143EE / DTA143EUA

z

z

z

z

Transistors DTA143EKA / DTA143ESA

Packaging specifications

V

V

I

C(Max.)

P

Tstg

VMT3

TapingTaping Taping Taping Taping

T2L

TL

3000

8000

−

−

−

−

−

−

−

−

CC

IN

I

O

D

Tj

Package
Packaging type
Code

Basic ordering

Part No.

unit (pieces)

DTA143EM
DTA143EE
DTA143EUA
DTA143EKA
DTA143ESA

z

Absolute maximum ratings (Ta=25qC)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature
Storage temperature

UMT3EMT3 SMT3 SPT

T106

T146

3000

3000TP5000

−

−

−

−

−

−

−

−

−

−

−

−

Limits

DTA143EEDTA143EM

DTA143EUA DTA143EKA DTA143ESA

−50

−30 to +10

−100

−100

150 200 300

150

−55 to +150

Equivalent circuit

R

1

IN

R

2

IN

R1=R2=4.7kΩ

OUT

GND(+)

OUT

GND(+)

Unit

V
V

mA

mW

°C
°C

z

Electrical characteristics (Ta=25qC)

Parameter Symbol

V

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Characteristics of built-in transistor

V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

I

f

I

I

1

1

T

∗

Typ. Max. Unit Conditions

Min.

−

−3

−

−

−

30

3.29

0.8

−

−0.1

4.7

250

−0.5

−

−

−

−0.3

−1.8

−

−0.5

−

−

−

6.11

1.2

1

−

V

CC

V

V

O

=−0.3V, IO=−20mA

I

O/II

V

V

mA

I

=−5V

μA

V

CC

−

V

O

=−5V, IO=−10mA

kΩ

−−

MHz

CE

V

=−5V, IO=−100μA

=−10mA/−0.5mA

=−50V, VI=0V

−

=−10V, IE=5mA, f=100MHz

Rev.B 2/3