ROHM DTA125TUA, DTA125TSA, DTA125TKA Datasheet
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
Features
!
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
Absolute maximum ratings
!
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Package, marking, and packaging specifications
!
Basic ordering unit (pieces)
Parameter Symbol
DTA125TUA / DTA125TKA
DTA125TSA
Part No. DTA125TUA
Package
Marking
Packaging code
(Ta = 25°C)
UMT3
9A
T106
3000
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
DTA125TKA
SMT3
9A
T146
3000
150
DTA125TSA
SPT
5000
Unit
V
V
V
mA
mW
°C
°C
−
TP
Limits
−50
−50
−5
−100
200
300
150
−
55
∼ +
External dimensions
!
DTA125TUA
0.3
0.15
0.1to0.4
ROHM : UMT3
EIAJ : SC-70
DTA125TKA
0.4
0.15
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
DTA125TSA
3
)
15Min.
(
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(Units : mm)
)
1
(
0.65
)
2
2.0
)
3
(
)
3
(
42
5
1.3
(
0.65
1.25
2.1
0.2
0.9
0.7
0to0.1
Each lead has same dimensions
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
3Min.
0.45
0.45
2.5
0.5
Taping specifications
(1) Emitter(Source
(2) Base(Gate
(3) Collector(Drain
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
(1) Emitter
(2) Collector
(3) Base
)
)
)
Electrical characteristics
!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Input resistance
Transition frequency
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Transition frequency of the device.
(Ta = 25°C)
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
R
f
MHz
I
V
C
=
−50µA
V
I
C
=
−1mA
V
I
E
=
−50µA
µA
V
CB
=
µA
kΩ
−50V
V
EB
=
−4V
V
I
C
=
−0.5mA , IB =
−
I
C
=
−1mA , V
CE
=
V
CE
−10V , IE =
−0.05mA
=
−5V
−
5mA , f = 100MHz
−50
−50
100
140
−
−
−
−
−
−5
−
−
−
−
−
250
200
250
−0.5
−0.5
−
−
−0.3
600
260
−
CBO
CEO
EBO
FE
1
T
−
∗
Circuit schematic
!
B
R
1
E : Emitter
C : Collector
B : Base
C
E
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