ROHM DTA125TKA, DTA125TSA, DTA125TUA Schematic [ru]
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
-100mA / -50V Digital transistor (with built-in resistors)
DTA125TUA / DTA125TKA / DTA125TSA
zApplications zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
1.25
(1)
3Min.
0.9
0.7
0.2
2.1
0.15
Each lead has same dimensions
1.1
0.8
1.6
2.8
0.15
Each lead has same dimensions
0.45
0.5
0.1Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
0.3Min.
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
zFeatures
DTA125TUA
2.0
0.3
(3)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
2) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of
the input, and parasitic effects are almost
ROHM : UMT3
EIAJ : SC-70
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 9A
completely eliminated.
3) Only the on / off conditions need to be set for
operation, making the device design easy .
4) Higher mounting densities can be achieved.
DTA125TKA
2.9
0.4
(3)
zStructure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
ROHM : SMT3
EIAJ : SC-59
zPackaging specifications
Package
Packaging type
Part No.
DTA125TUA
DTA125TKA
DTA125TSA
Code
Basic ordering unit (pieces)
UMT3
SMT3
Taping
Taping
T106
T146
3000
3000
−−
−
−−
SPT
Taping
TP
5000
−
DTA125TSA
zEquivalent c ircuit
ROHM : SPT
EIAJ : SC-72
(2)
0.95 0.95
1.9
Abbreviated symbol : 9A
4.0 2.0
3.0
(15Min.)
0.45
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A125TS
B
E : Emitter
C : Collector
B : Base
1
=200kΩ
R
R
1
C
E
Rev.B 1/2
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
DTA125TUA / DTA125TKA
DTA125TSA
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BV
BV
BV
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
V
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
z
Electrical characteristics curves
1k
V
CE
=5V
500
FE
200
100
50
20
10
DC CURRENT GAIN : h
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
Ta=100°C
Ta= −40°C
COLLECTOR CURRENT : I
Ta=25°C
Fig.1 DC current gain
vs. Collector current
C
(A)
DTA125TUA / DTA125TKA / DTA125TSA
Limits
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
T
−50
−50
−5
−
−
−
100
1
140
∗
−
1
I
C
/
I
B
=10/1
500m
(sat) (V)
CE
200m
100m
50m
20m
10m
5m
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
−50
−50
−5
−100
200
300
150
−55 to +150
−
−
−
−
−
−
250
200
250
Ta=100°C
−
−
−
−0.5
−0.5
−0.3
600
260
−
Ta=25°C
Ta= −40°C
Unit
V
V
V
mA
mW
°C
°C
I
V
C
= −50µA
V
I
C
= −1mA
V
I
E
= −50µA
µA
µA
kΩ
MHz
CB
= −50V
V
V
EB
= −4V
V
I
C
= −0.5mA , IB= −0.05mA
−
C
= −1mA , VCE= −5V
I
V
CE
= −10V , IE=5mA , f=100MHz
−
C
(A)
Rev.B 2/2
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