DTA124XM / DTA124XE / DTA124XUA
Transistors DTA124XKA / DTA124XSA
-100mA / -50V Digital transistors
(with built-in resistors)
DTA124XM / DTA124XE / DTA124XUA /
DTA124XKA / DTA124XSA
zApplica tions
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors e nable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the in put. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy .
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA124XM DTA124XE
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
ROHM : VMT3
DTA124XUA
ROHM : UMT3
EIAJ : SC-70
DTA124XSA
ROHM : SPT
EIAJ : SC-72
0.22
0.40.4
0.8
Abbreviated symbol : 35
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 35
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
Abbreviated symbol : A124XS
0.45
2.5
0.13
0.2
0.5
0.9
0.7
0.2
2.1
1.25
0.15
Each lead has same dimensions
3Min.
0.45
0.5
(1) IN
(2) GND
(3) OUT
(1) GND
(2) IN
0.1Min.
(3) OUT
(1) GND
(2) OUT
(3) IN
ROHM : EMT3
EIAJ : SC-75A
DTA124XKA
ROHM : SMT3
EIAJ : SC-59
1.6
0.3
(3)
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 35
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : 35
0.7
0.55
1.6
0.8
0.15
0.1Min.
(1) GND
(2) IN
(3) OUT
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
(1) GND
(2) IN
0.3Min.
(3) OUT
Rev.A 1/3
DTA124XM / DTA124XE / DTA124XUA
Transistors DTA124XKA / DTA124XSA
zPackaging specifications zEquiv alent circuit
UMT3EMT3 SMT3 SPT
TapingTaping Taping Taping Taping
TL
T106
T146
3000
3000
3000TP5000
−
−
−
−
−
DTA124XEDTA124XM DTA124XUA DTA124XKA DTA124XSA
150 200 300
Min.
−
−2.5
−
−
−
68
15.4
1.7
1
−
∗
−
−
−
−
−
−
−
−
−
Typ. Max. Unit Conditions
−
−
−0.1
−
−
−
22
2.1
250
−
−
Limits
−50
−40 to +10
−50
−100
150
−55 to +150
−0.4
−
−0.3
−0.36
−0.5
−
28.6
2.6
−
V
V
mA
µA
−
kΩ
−−
MHz
R
IN
1
R
2
IN
R1=22kΩ R2=47kΩ
V
CC
=−5V, IO=−100µA
V
O
=−0.3V, IO=−2mA
I
O/II
=−10mA/−0.5mA
V
I
=−5V
V
CC
=−50V, VI=0V
VO=−5V, IO=−5mA
−
CE
=−10V, IE=5mA, f=100MHz
V
Unit
V
V
mA
mW
°C
°C
OUT
GND(+)
OUT
GND(+)
Part No.
DTA124XM
DTA124XE
DTA124XUA
DTA124XKA
DTA124XSA
Package
Packaging type
Code
Basic ordering
unit (pieces)
VMT3
T2L
8000
−
−
−
−
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
V
I
I
C(Max.)
P
Tj
Tstg
CC
IN
O
D
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
V
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
f
I
I
I
1
T
Rev.A 2/3