-100mA / -50V Digital transistors
(with built-in resistors)
DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
Applications
Inverter, Interface, Driver
Features
1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTA124TM
ROHM : VMT3
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
Abbreviated symbol : 95
0.4 0.4
0.8
0.2
DTA124TE
0.13
0.5
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
1.6
0.3
(3)
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 95
0.7
0.55
1.6
0.8
0.15
0.1Min.
(1) Emitter
(2) Base
(3) Collector
DTA124TUA
ROHM : UMT3
EIAJ : SC-70
Inner circuit
B
B : Base
C : Collector
E : Emitter
R1=22kΩ
R
1
2.0
0.2
0.3
(3)
2.1
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 95
C
E
0.9
0.7
(1) Emitter
(2) Base
0.15
Each lead has same dimensions Each lead has same dimensions
(3) Collector
0.1Min.
DTA124TKA
ROHM : SMT3
EIAJ : SC-59
2.9
0.4
(3)
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : 95
1.1
0.8
1.6
2.8
0.15
(1) Emitter
(2) Base
0.3Min.
(3) Collector
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
Packaging specifications
VMT3
Taping
T2L
8000
Part No.
Package
Package type
Code
Basic ordering
unit (pieces)
DTA124TM
DTA124TE
DTA124TUA
DTA124TKA
−
−
−
Absolute maximum ratings (Ta=25C)
Parameter Symbol
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Electrical characteristics (Ta=25C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
500
200
FE
100
Ta=100°C
50
20
10
5
DC CURRENT GAIN : h
2
1
-100μ -200μ -500μ -1m -2m -5m -10m -20m -50m -100m
25°C
−40°C
COLLECTOR URRENT : I
Fig.1 DC current gain vs. collector current
VCE=−5V
C
(A)
UMT3EMT3 SMT3
Taping Taping Taping
T146
T106
TL
3000
−
−
−
3000
−
−
−
DTA124TE
3000
−
−
−
DTA124TM
150 200
−55 to +150
Typ. Max. Unit Conditions
Min.
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
T
−50
−50
−5
−
−
−
100
250
15.4
1
∗
22
−
250
(V)
CE(sat)
COLLECTOR SATURATION VOLTAGE : V
Limits
DTA124TUA DTA124TKA
−50
−50
−5
−100
150
−
−
VI
−
−
−
−
−
-1
-
500m
-
200m
-
100m
-
50m
-
20m
-
10m
-5m
-2m
-1m
-
10μ-20μ-50μ
V
−
V
−
μA
−0.5
μA
−0.5
V
−0.3
−
600
kΩ
28.6 −
MHz
−
Ta=100°C
25°C
−40°C
-100μ-200μ-500μ-1m -2m -5m -
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
Unit
mA
mW
°C
°C
C
=−50μA
I
C
=−1mA
I
E
=−50μA
V
CB
=−50V
V
EB
=−4V
C/IB
=−5mA/−0.5mA
I
V
CE
=−5V, IC=−1mA
VCE=−
V
V
V
10V, IE=
5mA, f=100MHz
IC/IB=10
10m
C
(A)
Data Sheet DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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