ROHM DTA124TUA Technical data

-100mA / -50V Digital transistors

(with built-in resistors)

DTA124TM / DTA124TE / DTA124TUA / DTA124TKA

 Applications
Inverter, Interface, Driver

 Features

1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see
equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.

3) Only the on / off conditions need to be set for operation, making the device design easy.

 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)

 Dimensions (Unit : mm)

DTA124TM

ROHM : VMT3

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

Abbreviated symbol : 95

0.4 0.4

0.8

0.2

DTA124TE

0.13

0.5

(1) Base
(2) Emitter
(3) Collector

ROHM : EMT3

1.6

0.3

(3)

(2)

(1)

0.2

0.2

0.5

0.5

1.0

Abbreviated symbol : 95

0.7

0.55

1.6

0.8

0.15

0.1Min.

(1) Emitter
(2) Base
(3) Collector

DTA124TUA

ROHM : UMT3
EIAJ : SC-70

 Inner circuit

B

B : Base
C : Collector
E : Emitter

R1=22kΩ

R

1

2.0

0.2

0.3

(3)

2.1

1.25

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 95

C

E

0.9

0.7

(1) Emitter
(2) Base

0.15

Each lead has same dimensions Each lead has same dimensions

(3) Collector

0.1Min.

DTA124TKA

ROHM : SMT3
EIAJ : SC-59

2.9

0.4

(3)

(2)

0.95 0.95

(1)

1.9

Abbreviated symbol : 95

1.1

0.8

1.6

2.8

0.15

(1) Emitter
(2) Base

0.3Min.

(3) Collector

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.B

 Packaging specifications

VMT3

Taping

T2L

8000

Part No.

Package

Package type

Code

Basic ordering
unit (pieces)

DTA124TM

DTA124TE

DTA124TUA

DTA124TKA

−

−

−

 Absolute maximum ratings (Ta=25C)

Parameter Symbol

V

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

CBO

V

CEO

V

EBO

I

P

Tj

Tstg

C

C

 Electrical characteristics (Ta=25C)

Parameter Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗ Characteristics of built-in transistor

 Electrical characteristic curves

1k

500

200

FE

100

Ta=100°C

50

20

10

5

DC CURRENT GAIN : h

2

1

-100μ -200μ -500μ -1m -2m -5m -10m -20m -50m -100m

25°C

−40°C

COLLECTOR URRENT : I

Fig.1 DC current gain vs. collector current

VCE=−5V

C

(A)

UMT3EMT3 SMT3

Taping Taping Taping

T146

T106

TL

3000

−

−

−

3000

−

−

−

DTA124TE

3000

−

−

−

DTA124TM

150 200

−55 to +150

Typ. Max. Unit Conditions

Min.

BV

BV

BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

R

f

T

−50

−50

−5

−

−

−

100

250

15.4

1

∗

22

−

250

(V)

CE(sat)

COLLECTOR SATURATION VOLTAGE : V

Limits

DTA124TUA DTA124TKA

−50

−50

−5

−100

150

−

−

VI

−

−

−

−

−

-1

-

500m

-

200m

-

100m

-

50m

-

20m

-

10m

-5m

-2m

-1m

-

10μ-20μ-50μ

V

−

V

−

μA

−0.5

μA

−0.5

V

−0.3

−

600

kΩ

28.6 −

MHz

−

Ta=100°C

25°C

−40°C

-100μ-200μ-500μ-1m -2m -5m -

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation
voltage vs. collector current

Unit

mA

mW

°C

°C

C

=−50μA

I

C

=−1mA

I

E

=−50μA

V

CB

=−50V

V

EB

=−4V

C/IB

=−5mA/−0.5mA

I

V

CE

=−5V, IC=−1mA

VCE=−

V

V

V

10V, IE=

5mA, f=100MHz

IC/IB=10

10m

C

(A)

Data Sheet DTA124TM / DTA124TE / DTA124TUA / DTA124TKA

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.B