ROHM DTA124TE, DTA124TKA, DTA124TM, DTA124TSA, DTA124TUA Schematic [ru]
DTA124TM / DTA124TE / DTA124TUA /
Transistors
DTA124TKA / DTA124TSA
-100mA / -50V Digital transistors (with built-in resistors)
DTA124TM / DTA124TE / DTA124TUA /
DTA124TKA / DTA124TSA
zApplic ations
Inverter, Interface, Driver
zFeatures
1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent
circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy .
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA124TM
ROHM : VMT3
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
Abbreviated symbol : 95
0.40.4
0.8
0.2
DTA124TE
0.13
0.5
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
1.6
0.3
(3)
(2)
(1)
0.2
0.5
0.5
1.0
Abbreviated symbol : 95
0.7
0.55
1.6
0.8
0.2
0.15
0.1Min.
(1) Emitter
(2) Base
(3) Collector
DTA124TUA
ROHM : UMT3
EIAJ : SC-70
DTA124TSA
ROHM : SPT
EIAJ : SC-72
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 95
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
Abbreviated symbol : A124TS
0.9
0.7
0.2
2.1
1.25
0.15
Each lead has same dimensions Each lead has same dimensions
3Min.
0.45
2.5
0.5
0.45
(1) Emitter
(2) Base
(3) Collector
0.1Min.
(1) Emitter
(2) Collector
(3) Base
DTA124TKA
ROHM : SMT3
EIAJ : SC-59
2.9
0.4
(3)
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : 95
1.1
0.8
1.6
2.8
0.15
(1) Emitter
(2) Base
0.3Min.
(3) Collector
Rev.A 1/3
DTA124TM / DTA124TE / DTA124TUA /
Transistors
zPackaging specifications zEquiv alent circuit
Part No.
DTA124TM
DTA124TE
DTA124TUA
DTA124TKA
DTA124TSA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
DTA124TKA / DTA124TSA
Package
Package type
Code
Basic ordering
unit (pieces)
Parameter Symbol
VMT3
Taping
T2L
8000
−
−
−
−
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
C
C
UMT3EMT3 SMT3 SPT
Taping Taping Taping Taping
TL
T106
3000
3000
−
−
−
−
−
−
−−−
DTA124TM
150 200 300
Min.
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
1
f
T
−50
−50
−5
−
−
−
100
15.4
−
∗
TP
T146
5000
3000
VI
V
V
µA
µA
V
−
kΩ
MHz
B
B : Base
C : Collector
E : Emitter
R1=22kΩ
C
=−50µA
IC=−1mA
I
E
=−50µA
V
CB
V
EB
C/IB
I
CE
V
V
CE
R
1
=−50V
=−4V
=−5mA/−0.5mA
=−5V, IC=−1mA
=−
10V, IE=
−
−
−
−
−
−
−
Limits
DTA124TE
DTA124TUA DTA124TKA DTA124TSA
−50
−50
−5
−100
150
−55 to +150
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
250
600
22
28.6 −
250
−
Unit
V
V
V
mA
mW
°C
°C
5mA, f=100MHz
C
E
Rev.A 2/3
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