-100mA / -50V Digital transistors
(with built-in resistors)
DTA124GKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making the device design easy.
3) Higher mounting densities can be achieved.
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications Inner circuit
SMT3
Taping
T146
3000
−
Part No.
DTA124GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Unit
V
V
V
V
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
LimitsParameter Symbol
−50
−50
−5
C
C
−100
200
150
−55 to +150
DTA124GKA
ROHM : SMT3
EIAJ : SC-59
B
E : Emitter
C : Collector
B : Base
R=22kΩ
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : K15
R
1.1
0.8
1.6
2.8
(1)
0.15
C
E
(1) GND
(2) IN
0.3Min.
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗Characteristics of built-in transistor.
Electrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=25°C
Ta= 40°C
Ta=100°C
C
(A)
Fig.1 DC current gain
vs. Collector current
Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
T
f
Min.
−50
−50
−140
15.4
Typ. Max. Unit Conditions
C
−
−
−
−
−5
−
−
−
−
−0.5
−
−260
−
−
−0.3
56
−
−
22
28.6
−
250
−
1
I
C
/
I
B
=20/1
) (V)
500m
sat
(
CE
200m
100m
50m
20m
10m
5m
2m
1m
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
=−50μA
I
V
C
=−1mA
I
V
I
E
=−330μA
V
CB
=−50V
V
μA
V
EB
μA
V
−
=−4V
I
C
=−10mA, IB=−0.5mA
C
=−5mA, VCE=−5V
I
kΩ−
V
CE
MHz
=−10V, IE=5mA, f=100MHz∗
Ta=25°C
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Ta=100°C
Ta= 40°C
C
(A)
Data Sheet DTA124GKA
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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A
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