ROHM DTA124GKA Technical data

-100mA / -50V Digital transistors

(with built-in resistors)

DTA124GKA

 Applications  Dimensions (Unit : mm)
Inverter, Interface, Driver

 Features

1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.

2) Only the on / off conditions need to be set for operation,
making the device design easy.

3) Higher mounting densities can be achieved.

 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)

 Packaging specifications  Inner circuit

SMT3

Taping

T146

3000

−

Part No.

DTA124GKA

Package

Packaging type

Code

Basic ordering unit (pieces)

 Absolute maximum ratings (Ta=25C)

Unit

V

V

V

V

mA

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

V

CBO

V

CEO

V

EBO

I

P

Tj

Tstg

LimitsParameter Symbol

−50

−50

−5

C

C

−100

200

150

−55 to +150

DTA124GKA

ROHM : SMT3
EIAJ : SC-59

B

E : Emitter
C : Collector
B : Base

R=22kΩ

2.9

0.4

(3)

(2)

0.95 0.95

1.9

Abbreviated symbol : K15

R

1.1

0.8

1.6

2.8

(1)

0.15

C

E

(1) GND
(2) IN

0.3Min.

(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.C

 Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Emitter-base resistance

Transition frequency

∗Characteristics of built-in transistor.



Electrical characteristic curves

1k

V

CE

=5V

500

200

FE

100

50

20

10

5

DC CURRENT GAIN : h

2

1
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Ta=25°C

Ta= 40°C

Ta=100°C

C

(A)

Fig.1 DC current gain
vs. Collector current

Symbol

BV

BV

BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

R

T

f

Min.

−50

−50

−140

15.4

Typ. Max. Unit Conditions

C

−

−

−

−

−5

−

−

−

−

−0.5

−

−260

−

−

−0.3

56

−

−

22

28.6

−

250

−

1

I

C

/

I

B

=20/1

) (V)

500m

sat

(

CE

200m

100m

50m

20m

10m

5m

2m

1m

100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

=−50μA

I

V

C

=−1mA

I

V

I

E

=−330μA

V

CB

=−50V

V

μA

V

EB

μA

V

−

=−4V

I

C

=−10mA, IB=−0.5mA

C

=−5mA, VCE=−5V

I

kΩ−

V

CE

MHz

=−10V, IE=5mA, f=100MHz∗

Ta=25°C

Fig.2 Collector-Emitter saturation voltage
vs. Collector current

Ta=100°C

Ta= 40°C

C

(A)

Data Sheet DTA124GKA

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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.C