
-100mA / -50V Digital transistors
(with built-in resistors)
DTA124GKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making the device design easy.
3) Higher mounting densities can be achieved.
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications Inner circuit
SMT3
Taping
T146
3000
−
Part No.
DTA124GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Unit
V
V
V
V
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
LimitsParameter Symbol
−50
−50
−5
C
C
−100
200
150
−55 to +150
DTA124GKA
ROHM : SMT3
EIAJ : SC-59
B
E : Emitter
C : Collector
B : Base
R=22kΩ
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : K15
R
1.1
0.8
1.6
2.8
(1)
0.15
C
E
(1) GND
(2) IN
0.3Min.
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C

Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗Characteristics of built-in transistor.
Electrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=25°C
Ta= 40°C
Ta=100°C
C
(A)
Fig.1 DC current gain
vs. Collector current
Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
T
f
Min.
−50
−50
−140
15.4
Typ. Max. Unit Conditions
C
−
−
−
−
−5
−
−
−
−
−0.5
−
−260
−
−
−0.3
56
−
−
22
28.6
−
250
−
1
I
C
/
I
B
=20/1
) (V)
500m
sat
(
CE
200m
100m
50m
20m
10m
5m
2m
1m
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
=−50μA
I
V
C
=−1mA
I
V
I
E
=−330μA
V
CB
=−50V
V
μA
V
EB
μA
V
−
=−4V
I
C
=−10mA, IB=−0.5mA
C
=−5mA, VCE=−5V
I
kΩ−
V
CE
MHz
=−10V, IE=5mA, f=100MHz∗
Ta=25°C
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Ta=100°C
Ta= 40°C
C
(A)
Data Sheet DTA124GKA
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R0039
A