ROHM DTA124GKA Technical data

-100mA / -50V Digital transistors
(with built-in resistors)
DTA124GKA
Applications Dimensions (Unit : mm) Inverter, Interface, Driver
Features
1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation, making the device design easy.
3) Higher mounting densities can be achieved.
Structure PNP epitaxial planar silicon transistor (Resistor built-in type)
Packaging specifications Inner circuit
SMT3
Taping
T146
3000
Part No.
DTA124GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
 Absolute maximum ratings (Ta=25C)
Unit
V
V
V
V
mA
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
LimitsParameter Symbol
50
50
5
C
C
100
200
150
55 to +150
DTA124GKA
ROHM : SMT3 EIAJ : SC-59
B
E : Emitter C : Collector B : Base
R=22kΩ
2.9
0.4
(3)
(2)
0.95 0.95
1.9
R
1.1
0.8
1.6
2.8
(1)
0.15
C
E
(1) GND (2) IN
0.3Min.
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Characteristics of built-in transistor.
Electrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1 1002005001m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=25°C
Ta= 40°C
Ta=100°C
C
(A)
Fig.1 DC current gain vs. Collector current
Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
T
f
Min.
50
50
140
15.4
Typ. Max. Unit Conditions
C
5
0.5
260
0.3
56
22
28.6
250
1
I
C
/
I
B
=20/1
) (V)
500m
sat
(
CE
200m
100m
50m
20m
10m
5m
2m
1m
1002005001m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
=−50μA
I
V
C
=−1mA
I
V
I
E
=−330μA
V
CB
=−50V
V
μA
V
EB
μA
V
=−4V
I
C
=−10mA, IB=−0.5mA
C
=−5mA, VCE=−5V
I
kΩ−
V
CE
MHz
=−10V, IE=5mA, f=100MHz
Ta=25°C
Fig.2 Collector-Emitter saturation voltage vs. Collector current
Ta=100°C
Ta= 40°C
C
(A)
Data Sheet DTA124GKA
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
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The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
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