ROHM DTA124EUB Schematic [ru]

Transistors ! !!!!!! !!DTA124EUB

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-100mA / -50V Digital transistors
(with built-in resistors)

DTA124EUB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

UMT3F

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Features

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

PNP silicon epitaxial planar transistor type

(Resistor built-in)

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Packaging specifications

UMT3F

TL

3000

Part No.

DTA124EUB

Package

Packaging type Taping

Code

Basic ordering unit (pieces)

(1) IN
(2) GND
(3) OUT

Equivalent circuit

IN

IN

R1=R2=22kΩ

0.32

(3)

0.4250.425

2.1

1.25

(1) (2)

0.65 0.65

Abbreviated symbol : 15

R

1

R

2

2.0

1.3

GND(+)

0.9

0.530.53

0.13

Each lead has same dimensions

OUT

GND(+)

OUT

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Absolute maximum ratings (Ta=25qC)

Parameter Symbol

V

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

Characteristics of built-in transistor

∗1
∗2

Each terminal mounted on a recommended land

CC

IN

V

IC(max.)

O

I

PD

Tj

Tstg

UnitLimits

−50

∗1

∗2

−40 to +10

−100

−30

200

150

−55 to +150

V

V

mA

mA

mW

°C

°C

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Transistors ! !!!!!! !!DTA124EUB

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Electrical characteristics (Ta=25qC)

Parameter Symbol

I(off)

Input voltage

Output voltage

V

V

I(on)

V

O(on)

Input current

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

I

O(off)

G

R

R2/R

f

∗Characteristics of built-in transistor.

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Electrical characteristic curves

−100

−50

−20

(V)

I (on)

−10

Ta=−40°C

−5

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100μ

25°C

100°C

−1m −10m −100m

−200μ−2m −20m−500μ−5m −50m

OUTPUT CURRENT : I

O

(A)

VO=−0.3V

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

(V)

−200m

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100μ−1m −10m −100m−200μ−2m −20m−500μ−5m −50m

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

lO/lI=20

O

(A)

Fig.4 Output voltage vs. output

current

I

I

I

T

1

1

Typ. Max. Unit Conditions

Min.

−

−3

−

−

−

56

−−

15.4

0.8

−10m

(A)

−500μ

−200μ

−100μ

−50μ

−20μ

−10μ

OUTPUT CURRENT : Io

−0.5

−

−−

−100

−300

−

360

−

−

−500

−

−

250

22

28.6

1

1.2

VCC=−

5V

−5m

−2m

Ta=100°C

25°C

−1m

−40°C

−5μ

−2μ

−1μ
0 −3.0

−0.5 −1.0 −1.5 −2.0 −2.5

INPUT VOLTAGE : V

CC

=−5V, IO=−100μA

V

V

O

=−0.2V, IO=−5mA

V

O

=−10mA, II=−0.5mA

mV

I

V

I

=−5V

μA

V

nA

CC

=−50V, VI=0V

V

−

O

=−5V, IO=−5mA

MHz

V

CE

=−10V, IE=5mA, f=100MHz∗

kΩ

−−

I (off)

Fig.2 Output current vs. input voltage

(OFF characteristics)

(V)

−

1k

500

I

200

100

50

20

10

5

DC CURRENT GAIN : G

2

1

−

μ−1m−

100

−

200

Ta=100°C

25°C

−40°C

μ−2m−

−

μ−5m−

500

OUTPUT CURRENT : I

Fig.3 DC current gain vs. output

current

10m

VO=−

5V

−

100m

20m

50m

O

(A)

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