ROHM DTA124EM, DTA124ESA Schematic [ru]
DTA124EM / DTA124EE / DTA124EUA /
Transistor DTA124EKA / DTA124ESA
-100mA / -50V Digital transistors (with built-in resistors)
DTA124EM / DTA124EE / DTA124EUA /
DTA124EKA / DTA124ESA
zApplica tions
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see the equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive bia sing o f the inpu t.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy .
zStructure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
Type
DTA124EM
DTA124EE
DTA124EUA
DTA124EKA
DTA124ESA
VMT3
T2L
8000
−
−
−
−
UMT3EMT3 SMT3 SPT
TapingTaping Taping Taping Taping
TL
T106
T146
3000
3000
3000TP5000
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
zEquivalent circuit
R
1
IN
R
IN
R1=R2=22kΩ
2
OUT
GND(+)
OUT
GND(+)
Rev.A 1/2
zExternal dimensions (Unit : mm)
DTA124EM
ROHM : VMT3
DTA124EE
ROHM : EMT3
DTA124EUA
ROHM : UMT3
EIAJ : SC-70
DTA124EKA
1.2
0.32
(3)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 15
1.6
0.3
(3)
(2)
0.2
0.5
0.5
1.0
Abbreviated symbol : 15
2.0
0.3
(3)
(2)
0.65
0.65
1.3
Abbreviated symbol : 15
2.9
0.4
(3)
(2)
0.95 0.95
ROHM : SMT3
EIAJ : SC-59
DTA124ESA
ROHM : SPT
EIAJ : SC-72
1.9
Abbreviated symbol : 15
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
Abbreviated symbol : A124ES
0.2
1.2
0.8
(2)
(1)
0.2
(1)
(1)
2.5
3Min.
0.45
0.13
0.2
0.5
0.7
0.55
1.6
0.8
0.15
0.9
0.2
2.1
1.25
0.15
1.1
1.6
2.8
0.15
0.5
0.7
0.8
0.45
0.1Min.
(1) IN
(2) GND
(3) OUT
(1) GND
(2) IN
(3) OUT
(1) GND
0.1Min.
(2) IN
(3) OUT
(1) GND
(2) IN
0.3Min.
(3) OUT
(1) GND
(2) OUT
(3) IN
DTA124EM / DTA124EE / DTA124EUA /
Transistor DTA124EKA / DTA124ESA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
I
C(Max.)
Tstg
DTA124EEDTA124EM
CC
V
IN
I
O
P
D
150 200 300
Tj
Limits
DTA124EUA DTA124EKA DTA124ESA
−50
−40 to +10
−30
−100
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗Characteristics of built-in transistor.
V
V
V
O(on)
I
O(off)
G
R
R2/R
Min.
Typ. Max. Unit Conditions
−
−
I(off)
−−
−3
I(on)
−0.1
−
−
−
I
I
−
−
−
56
I
22
15.4
1
1
0.8
1
250
−−
f
T
∗
−0.5
−0.3
−
0.36
−0.5
28.6
1.2
−
CC
=−5V, IO=−100µA
V
V
V
O
=−0.2V, IO=−5mA
I
O/II
=−10mA/−0.5mA
V
V
mA
I
=−5V
µA
V
CC
=−50V, VI=0V
V
O
=−5V, IO=−5mA
−
kΩ
−−
V
CE
MHz
=−10V, IE=5mA, f=100MHz
zElectrical characteristic curves
−100
−50
−20
(V)
I (on)
−10
Ta=−40°C
−5
−2
−1
−500m
INPUT VOLTAGE : V
−200m
−100m
−100µ
25°C
100°C
−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
O
(A)
VO=−0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
−500m
(V)
−200m
O(on)
−100m
−50m
−20m
−10m
−5m
OUTPUT VOLTAGE : V
−2m
−1m
−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
O
lO/lI=20
(A)
Fig.4 Output voltage vs. output
current
−10m
V
CC
=−
5V
−5m
−2m
Ta=100°C
(A)
25°C
−1m
−40°C
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
OUTPUT CURRENT : Io
−5µ
−2µ
−1µ
0 −3.0
−0.5 −1.0 −1.5 −2.0 −2.5
INPUT VOLTAGE : V
I (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Rev.A 2/2
Unit
V
V
mA
mW
°C
°C
−
I
DC CURRENT GAIN : G
1k
500
200
100
50
20
10
5
2
1
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
V
O
=−
5V
O
(A)
Loading...