ROHM DTA124EEB Schematic [ru]

Transistors DTA124EEB

-100mA / -50V Digit al transistors
(with built-in resistors)

DTA124EEB

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

zStructure zEquivalent circuit

PNP silicon epitaxial planar transistor type
(Resistor built-in)

zPackaging specifications

EMT3F

TL

3000

Part No.
DTA124EEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

VCC

V

Io

P

Tj

Tstg

IN

D

LimitsParameter Symbol

−50

−40 to +10

∗1

∗2

−100 mAIc(max)

−30

150
150

−55 to +150

Unit

mW

V
V

mA

°C
°C

EMT3F

(1) IN
(2) GND
(3) OUT

R

1

IN

R

IN

R1=R2=22kΩ

0.37

1.6

0.86

0.37

2

1.6

0.26
(3)

(1) (2)

0.5 0.5

1.0

Abbreviated symbol : 15

OUT

GND(+)

OUT

GND(+)

0.7

0.45

0.13

Each lead has same dimensions

0.45

1/2

Transistors DTA124EEB

zElectrical characteristics (T a=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗Characteristics of built-in transistor.

zElectrical characteristic curves

−100

−50

−20

(V)

I (on)

−10
Ta=−40°C

−5

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

25°C

100°C

−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

OUTPUT CURRENT : I

O

(A)

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

(V)

−200m

O(on)

−100m

−50m

−20m

−10m

−5m

OUTPUT VOLTAGE : V

−2m

−1m

−100µ−1m −10m −100m−200µ−2m −20m−500µ−5m −50m

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

O

(A)

Fig.4 Output voltage vs. output

current

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

I

f

T

R

1

R2/R

VO=−0.3V

lO/lI=20

Min.

Typ. Max. Unit Conditions

−500

−

−

−−

−3

−300

−100

−

−360

−

−

−

56

−−

15.4

0.8

1

−500

−

−

−

250

28.6

22

1.2

1

−10m
V

CC

=−

5V

−5m

−2m

Ta=100°C

(A)

OUTPUT CURRENT : Io

25°C

−1m

−40°C

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

−2µ

−1µ
0 −3.0

−0.5 −1.0 −1.5 −2.0 −2.5

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

V

CC

mV

V

mV

µA
nA

−

MHz

kΩ

=−5V, IO=−100µA

O

=−0.2V, IO=−5mA

V
I

O/II

=−10mA/−0.5mA

V

I

=−5V

V

CC

=−50V, VI=0V

V

O

=−5V, IO=−5mA

V

CE

=−10V, IE=5mA, f=100MHz∗

−

−−

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ−1m −10m −100m

−200µ−2m −20m−500µ−5m −50m

I (off)

(V)

Fig.3 DC current gain vs. output

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

current

V

O

(A)

O

=−

5V

2/2