ROHM DTA115TE, DTA115TKA, DTA115TM, DTA115TSA, DTA115TUA Schematic [ru]

DTA115TM / DTA115TE / DTA115TUA /

r
r
R
Transistors

DTA115TKA / DTA115TSA

-100mA / -50V Digital transistors (with built-in resistors)
zApplicat ions zExternal dimensions (Unit : mm) Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation, making
the device design easy .
4) Higher mounting densities can be achieved.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zPackaging specifications
Package Packaging type Code
Basic ordering unit (pieces)
Part No. DTA115TM
DTA115TE DTA115TUA DTA115TKA DTA115TSA
VMT3
T2L
8000
TapingTaping Taping Taping Taping
3000
UMT3EMT3 SMT3 SPT
TL
T106
3000
T146
3000TP5000
zEquivalent circuit
B
E : Emitter C : Collector B : Base
1
=100k
R
1
C
E
DTA115TM
ROHM : VMT3
DTA115TE
ROHM : EMT3 EIAJ : SC-75A
DTA115TUA
ROHM : UMT3 EIAJ : SC-70
DTA115TKA
ROHM : SMT3 EIAJ : SC-59
DTA115TSA
ROHM : SPT EIAJ : SC-72
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 99
1.6
0.3
(3)
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 99
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 99
2.9
0.4
(3)
(2)
(1)
0.95 0.95
1.9
Abbreviated symbol : 99
4.0 2.0
3.0
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A115TS
3Min.
0.45
0.13
0.2
0.5
0.7
0.55
1.6
0.8
0.15
0.9
0.7
0.2
2.1
1.25
0.15
1.1
0.8
1.6
2.8
0.15
0.45
0.5
(1) Base (2) Emitter (3) Collector
0.1Min.
(1) Emitter (2) Base (3) Collector
0.1Min.
(1) Emitter (2) Base (3) Collecto
(1) Emitter
0.3Min.
(2) Base (3) Collecto
(1) Emitter (2) Collector (3) Base
Rev.B 1/2
DTA115TM / DTA115TE / DTA115TUA /
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
DTA115TM / DTA115TE DTA115TUA / DTA115TKA DTA115TSA
Junction temperature Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current
transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
zElectrical characteristics curves
1k
VCE=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
Ta=25°C
Ta= −40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. Collector current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Ta=100°C
C
(A)
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Min. Typ. Max. Unit Conditions
50
50
5
100
70
Limits
50
50
5
100
150 200 300
150
55 to +150
250 100 250
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
CORRECTOR SATURATION VOLTAGE : V
Fig.2 Collector-Emitter saturation voltage vs. Collector current
DTA115TKA / DTA115TSA
Unit
V V V
mA
mW
°C °C
0.5
0.5
0.3
600 130
1
IC/IB=10/1
Ta=100°C
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : I
µA µA
k
MH
I
C
V
I
C
V
I
E
V
V V I
C/IB
V
C
I
V
Z
Ta= −40°C
= −50µA = −1mA
= −50µA
CB
= −50V
EB
= −4V
= −1mA/0.1mA
= −1mA , VCE= −5V
CE
= −10V , IE=5mA , f=100MH
Ta=25°C
C
(A)
Z
Rev.B 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Loading...