ROHM DTA115TE, DTA115TKA, DTA115TM, DTA115TSA, DTA115TUA Schematic [ru]
DTA115TM / DTA115TE / DTA115TUA /
r
r
R
Transistors
DTA115TKA / DTA115TSA
-100mA / -50V Digital transistors
(with built-in resistors)
DTA115TM / DTA115TE / DTA115TUA /
DTA115TKA / DTA1 15TSA
zApplicat ions zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation, making
the device design easy .
4) Higher mounting densities can be achieved.
zStructure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
Part No.
DTA115TM
DTA115TE
DTA115TUA
DTA115TKA
DTA115TSA
VMT3
T2L
8000
−
−
−
−
TapingTaping Taping Taping Taping
3000
UMT3EMT3 SMT3 SPT
TL
T106
3000
−
−
−
−
−
−
−
−
T146
3000TP5000
−
−
−
−
−
−
−
−
zEquivalent circuit
B
E : Emitter
C : Collector
B : Base
1
=100kΩ
R
1
C
E
DTA115TM
ROHM : VMT3
DTA115TE
ROHM : EMT3
EIAJ : SC-75A
DTA115TUA
ROHM : UMT3
EIAJ : SC-70
DTA115TKA
ROHM : SMT3
EIAJ : SC-59
DTA115TSA
ROHM : SPT
EIAJ : SC-72
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 99
1.6
0.3
(3)
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 99
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 99
2.9
0.4
(3)
(2)
(1)
0.95 0.95
1.9
Abbreviated symbol : 99
4.0 2.0
3.0
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A115TS
3Min.
0.45
0.13
0.2
0.5
0.7
0.55
1.6
0.8
0.15
0.9
0.7
0.2
2.1
1.25
0.15
1.1
0.8
1.6
2.8
0.15
0.45
0.5
(1) Base
(2) Emitter
(3) Collector
0.1Min.
(1) Emitter
(2) Base
(3) Collector
0.1Min.
(1) Emitter
(2) Base
(3) Collecto
(1) Emitter
0.3Min.
(2) Base
(3) Collecto
(1) Emitter
(2) Collector
(3) Base
Rev.B 1/2
DTA115TM / DTA115TE / DTA115TUA /
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
DTA115TM / DTA115TE
DTA115TUA / DTA115TKA
DTA115TSA
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Transition frequency
∗Characteristics of built-in transistor
zElectrical characteristics curves
1k
VCE=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
Ta=25°C
Ta= −40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. Collector current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Ta=100°C
C
(A)
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Min. Typ. Max. Unit Conditions
−50
−50
−5
−
−
−
100
70
−
∗
Limits
−50
−50
−5
−100
150
200
300
150
−55 to +150
−
−
−
−
−
−
250
100
250
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
CORRECTOR SATURATION VOLTAGE : V
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
DTA115TKA / DTA115TSA
Unit
V
V
V
mA
mW
°C
°C
−
−
−
−0.5
−0.5
−0.3
600
130
−
1
IC/IB=10/1
Ta=100°C
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : I
µA
µA
kΩ
MH
I
C
V
I
C
V
I
E
V
V
V
I
C/IB
V
−
C
I
V
Z
Ta= −40°C
= −50µA
= −1mA
= −50µA
CB
= −50V
EB
= −4V
= −1mA/−0.1mA
= −1mA , VCE= −5V
−
CE
= −10V , IE=5mA , f=100MH
Ta=25°C
C
(A)
Z
Rev.B 2/2
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