ROHM DTA115EEB Schematic [ru]

DTA115EEB

Transistors

100mA / 50V Digit al transistors
(with built-in resistors)

DTA115EEB

zApplications

Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).

2) Each bias resistor is a thin-film resistor. Since they are
completely insulated, the input can be negatively
biased. The insulation also eliminates most of the
parasitic effects.

3) Only the on / off conditions need to be set for
operation, making the devi ce design easy.

zStructure

PNP silicon epitaxial planar digital transistor

zPackaging specifications

Package

Type

DTA115EEB

Code TR
Basic ordering unit (pieces)

Taping

3000

zAbsolute maximum ratings (Ta=25°C)

z Dimensions (Unit : mm)

EMT3F

(1) (2)

(1) IN
(2) GND
(3) OUT

Abbreviated symbol : 19

zEquivalent circuit

R

1

(1) (2)

IN

R1=100kΩ, R2=100kΩ

OUT

(3)

R

2

IN

GND

GND(+)

(3)

Each lead has same dimensions

OUT

Unit

V

V
mA
mA

mW

°C
°C

Supply voltage
Input voltage
Collector current
Output Current
Power dissipation
Junction temperature
Range of storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

I

CC

V

V

IN

C(Max.)

I

O

P

D

Tj

Tstg

∗1

∗2

LimitsParameter Symbol

−50

−40 to 10

−100

−20

150
150

−55 to +150

1/2

DTA115EEB

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol

V

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

V

V

O(on)

I

O(off)

G

R

R2/R

I(off)

I(on)

I

f

T

I

I

∗

1

1

zElectrical characteristic curves

-100

100

Ta=－40

[V]

I(ON)

-10

10

V

：

1

-1

INPUT VOLTAGE

-0.1

0.1

0.1 1 10 100

-0.1

℃
　　　　25℃
　　　　75℃

125

℃

-1 -10 -100

OUTPUT CURRENT：I

Fig.1 Input Voltage vs. Output Current
(ON Characteristics)

Vo=－0.3V

[mA]

O

Typ. Max. Unit Conditions

Min.

−

−3.0

−

−

−

82

−

70

0.8

−

−500

−

−

−100

−300

−

−0.15

−

−500

−

−

−

250
100

130

1

1.2

-10

10

VCC=－5V

-1

1

[mA]

O

I

：

0.1

-0.1

-0.01

0.01

OUTPUT CURRENT

-0.001

0.001

00.511.522.53

-0.5 -1 -1.5 -2 -2.5 -3
INPUT VOLTAGE：V

V

CC

mV

V

O

V

I

O/II

mV

I

= −5V

V

mA

nA

V

CC

−

O

V

CE

V

MHz

kΩ

−−

Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)

= −5V, IO= −100µA

= −0.3V, IO= −1mA

= −5mA/−0.25mA

= −50V, VI=0V

= −5V, IO= −5mA

= −10V, IE=5mA, f=100MHz

−

-

1000

I

G

：

-

-

Ta=125

75℃
　　　　25℃

　　　－40℃

[V]

I(OFF)

℃

-

DC CURRENT GAIN

Vo=－5V

100

Ta=125

℃

10

-

1

-

Fig.3 DC Current Gain vs. Output Current

75℃
　　　　25℃

　　　－40℃

[mA]

O

-

0.1 1 10 100

OUTPUT CURRENT：I

--

-

1

[V]

O(ON)

V

：

-

0.1

OUTPUT VOLTAGE

-

0.01

Ta=125

℃
　　　　75℃
　　　　25℃

　　　-40℃

0.1 1 10 100

OUTPUT CURRENT：I

IO/II=20

[mA]

O

-

---

Fig.4 Output Voltage vs. Output Current

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