ROHM DTA115EE, DTA115EKA, DTA115EM, DTA115ESA, DTA115EUA Schematic [ru]

DTA115EM / DTA115EE / DTA115EUA

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Transistors DTA115EKA / DTA115ESA

-100mA / -50V Digital transistors
(with built-in resistors)

DTA115EM / DTA115EE / DTA1 15EUA /
DTA115EKA / DTA115ESA

Applications

Inverter, Interface, Driver

Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and p arasitic
effects are almost completely eliminated.

3) Only the on/off conditions need to be set for operation, making the device design easy.

4) Higher mounting densities can be achieved.

Structure

PNP epitaxial planar silicon transistor (Resistor built-in type)

External dimensions (Unit : mm)

DTA115EM

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

ROHM : VMT3

DTA115EUA

ROHM : UMT3
EIAJ : SC-70

DTA115ESA

ROHM : SPT
EIAJ : SC-72

0.8

Abbreviated symbol : 19

2.0

0.3

(3)

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 19

4.0 2.0

3.0

(15Min.)

2.5

5.0

(1) (2) (3)

Abbreviated symbol : A115ES

0.2

1.2

0.8

0.13

0.2

0.5

0.9

0.7

0.2

2.1

1.25

0.15

Each lead hsa same dimensions

3Min.

0.45

0.5

0.1Min.

0.45

(1) IN
(2) GND
(3) OUT

(1) GND
(2) IN
(3) OUT

(1) GND
(2) OUT
(3) IN

DTA115EE

ROHM : EMT3

DTA115EKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

(2)

(1)

0.2

0.2

0.5

0.5

1.0

Abbreviated symbol : 19

2.9

0.4

(3)

(2)

0.95 0.95

(1)

1.9

Abbreviated symbol : 19

0.7

0.55

1.6

0.8

0.15

0.1Min.

1.1

0.8

1.6

2.8

0.15

Each lead hsa same dimensions

0.3Min.

(1) GND
(2) IN
(3) OUT

(1) GND
(2) IN
(3) OUT

Rev.B 1/3

DTA115EM / DTA115EE / DTA115EUA

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Transistors DTA115EKA / DTA115ESA

Packaging specifications

Package
Packging type
Code

Part No.
DTA115EM
DTA115EE
DTA115EUA
DTA115EKA
DTA115ESA

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Absolute maximum ratings (Ta=25qC)

Supply voltage
Input voltage

Output current

Power
dissipation

Junction temperature
Storage temperature

Basic ordering unit (pieces)

Parameter Symbol

DTA115EM / DTA115EE
DTA115EUA / DTA115EKA
DTA115ESA

EMT3

VMT3

Taping

T2L

8000

−

−

−

−

UMT3

SMT3

SPT

Taping

Taping

Taping

Taping

TL

T106

3000

3000

T146
3000

TP

5000

−−−−

−

−−

−

−−

−

−−

Limits

V

CC

VI
IO

IC(Max.)

−50

−40 to +10

−20

−100

150

PD

200
300

Tj

Tstg

150

−55 to +150

−

−

−

R1=R2=100kΩ

Equivalent circuit

R

1

IN

R

2

IN

Unit

V
V

mA

mW

°C
°C

GND (+)

OUT

GND (+)

OUT

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Electrical characteristics (Ta=25qC)

Parameter
Input voltage
Output voltage

Input current
Output current
DC current gain
Input resistance
Resistance ratio

Transition frequency

Characteristics of built-in transistor

∗

Symbol

V

I(off)
I(on)

V

V

O(on)

I

I

I

O(off)

G

I

R

1

R

2/R1

f

T

Min. Typ. Max. Unit

−

−0.5

−

−3 −−

−0.3

−0.15

−

−0.5

−

−

130

82
70

−

−0.1

−

−

100

0.8 1 1.2 −

∗

−

250

Conditions

V

CC

V
V

mA

μA

−

−

kΩ

= −5V, IO= −100μA

V

O

= −0.3V, IO= −1mA

O

= −5mA, II= −0.25mA

I
V

I

= −5V

V

CC

= −50V, VI=0V

O

= −5mA, VO= −5V

I

−

−

−

MHz

V

CE

= −10V, IE=5mA, f=100MHz

Rev.B 2/3