DTA114YM / DTA114YE / DTA114YUA
Transistors
DTA114YKA / DTA114YSA
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114YM / DTA114YE / DTA1 14YUA /
DTA114YKA / DTA114YSA
zApplicat ions
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors en able the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the i nput. They a lso
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA114YM
ROHM : VMT3
DTA114YUA
ROHM : UMT3
EIAJ : SC-70
DTA114YSA
ROHM : SPT
EIAJ : SC-72
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 54 Abbreviated symbol : 54
2.0
0.3
(3)
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 54
4.0 2.0
3.0
3Min.
0.45
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A114YS
0.13
0.2
0.5
Each lead has same dimensions Each lead has same dimensions
0.9
0.7
0.2
2.1
0.15
Each lead has same dimensions
0.45
0.5
(1) IN
(2) GND
(3) OUT
(1) GND
(2) IN
0.1Min.
(3) OUT
(1) GND
(2) OUT
(3) IN
DTA114YE
ROHM : EMT3
DTA114YKA
ROHM : SMT3
EIAJ : SC-59
1.6
0.3
(3)
0.8
(2)
(1)
0.2
0.2
0.5
0.5
1.0
2.9
0.4
(3)
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : 54
1.6
1.6
2.8
Each lead has same dimensions
0.15
0.7
0.55
0.15
(1) GND
(2) IN
0.1Min.
(3) OUT
1.1
0.8
(1) GND
(2) IN
0.3Min.
(3) OUT
Rev.A 1/3
DTA114YM / DTA114YE / DTA114YUA
Transistors
zPackaging specifications zEquivalent circ uit
DTA114YKA / DTA114YSA
VMT3
T2L
8000
−
−
−
−
TapingTaping Taping Taping Taping
3000
Type
DTA114YM
DTA114YE
DTA114YUA
DTA114YKA
DTA114YSA
Package
Packaging type
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
I
C(Max.)
Pd
Tstg
CC
V
I
I
O
Tj
DTA114YEDTA114YM DTA114YUA DTA114YKA DTA114YSA
150 200 300
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
Min.
−
−1.4
−
−
I
−
68
I
7
1
3.7
1
−
T
UMT3EMT3 SMT3 SPT
TL
T106
3000
−
−
−
−
−55 to +150
Typ. Max. Unit Conditions
−
−
−0.1
−0.88
−
−
−
10
4.7
250
T146
3000TP5000
−
−
−
−
−40 to +6
−0.3
−0.3
−0.5
13
5.7
−
−
−
−
Limits
−50
−70
−100
150
V
−
V
mA
µA
−
−
kΩ
−−
−
MHz
−
−
−
−
V
CC
=−5V, IO=−100µA
V
O
=−0.3V, IO=−1mA
I
O/II
=−5mA/−0.25mA
V
I
=−5V
V
CC
=−50V, VI=0V
V
O
=−5V, IO=−5mA
V
CE
=−10V, IE=5mA, f=100MHz∗
R1=10kΩ, R2=47kΩ
Unit
V
V
mA
mW
°C
°C
−
R
1
IN
R
2
IN
OUT
GND(+)
OUT
GND(+)
Rev.A 2/3