ROHM DTA114YE, DTA114YKA, DTA114YM, DTA114YUA Schematic [ru]

DTA114YM / DTA114YE / DTA114YUA
Transistors

DTA114YKA / DTA114YSA

-100mA / -50V Digital transistors (with built-in resistors)
DTA114YM / DTA114YE / DTA1 14YUA / DTA114YKA / DTA114YSA
zApplicat ions Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors en able the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the i nput. They a lso have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA114YM
ROHM : VMT3
DTA114YUA
ROHM : UMT3 EIAJ : SC-70
DTA114YSA
ROHM : SPT EIAJ : SC-72
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 54 Abbreviated symbol : 54
2.0
0.3
(3)
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 54
4.0 2.0
3.0 3Min.
0.45
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A114YS
0.13
0.2
0.5
Each lead has same dimensions Each lead has same dimensions
0.9
0.7
0.2
2.1
0.15
Each lead has same dimensions
0.45
0.5
(1) IN (2) GND (3) OUT
(1) GND (2) IN
0.1Min.
(3) OUT
(1) GND (2) OUT (3) IN
DTA114YE
ROHM : EMT3
DTA114YKA
ROHM : SMT3 EIAJ : SC-59
1.6
0.3
(3)
0.8
(2)
(1)
0.2
0.2
0.5
0.5
1.0
2.9
0.4
(3)
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : 54
1.6
1.6
2.8
Each lead has same dimensions
0.15
0.7
0.55
0.15
(1) GND (2) IN
0.1Min.
(3) OUT
1.1
0.8
(1) GND (2) IN
0.3Min.
(3) OUT
Rev.A 1/3
DTA114YM / DTA114YE / DTA114YUA
Transistors
zPackaging specifications zEquivalent circ uit
DTA114YKA / DTA114YSA
VMT3
T2L
8000
TapingTaping Taping Taping Taping
3000
Type DTA114YM
DTA114YE DTA114YUA DTA114YKA DTA114YSA
Package Packaging type Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Supply voltage Input voltage
Output current
Power dissipation Junction temperature Storage temperature
V
I
C(Max.)
Pd
Tstg
CC
V
I
I
O
Tj
DTA114YEDTA114YM DTA114YUA DTA114YKA DTA114YSA
150 200 300
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
Characteristics of built-in transistor
V V
V
O(on)
I
O(off)
G R
R2/R
I(off)
I(on)
I
f
Min.
1.4
I
68
I
7
1
3.7
1
T
UMT3EMT3 SMT3 SPT
TL
T106
3000
55 to +150
Typ. Max. Unit Conditions
0.1
0.88
10
4.7
250
T146
3000TP5000
40 to +6
0.3
0.3
0.5
13
5.7
Limits
50
70
100
150
V
V
mA
µA
k
−−
MHz
V
CC
=−5V, IO=−100µA
V
O
=−0.3V, IO=−1mA
I
O/II
=−5mA/0.25mA
V
I
=−5V
V
CC
=−50V, VI=0V
V
O
=−5V, IO=−5mA
V
CE
=−10V, IE=5mA, f=100MHz
R1=10k, R2=47k
Unit
V V
mA
mW
°C °C
R
1
IN
R
2
IN
OUT
GND(+)
OUT
GND(+)
Rev.A 2/3
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