ROHM DTA114TE, DTA114TKA, DTA114TM, DTA114TSA, DTA114TUA Schematic [ru]
DTA114TM / DTA114TE / DTA114TUA
Transistors DTA114TKA / DTA114TSA
-100mA / -50V Digital transistors (with built-in resistors)
DTA114TM / DTA114TE / DTA1 14TUA
DTA114TKA / DTA114TSA
zApplica tions
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors en able the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the in put. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy .
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA114TM
ROHM : VMT3
DTA114TUA
ROHM : UMT3
EIAJ : SC-70
DTA114TSA
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
Abbreviated symbol : 94
2.0
(3)
(2)
0.65
1.3
Abbreviated symbol : 94
3.0
0.2
0.40.4
0.8
0.2
0.3
1.25
(1)
0.65
4.0 2.0
3Min.
2.1
0.13
0.5
0.9
0.7
0.15
Each lead has same dimensions Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
0.1Min.
(2) Base
(3) Collector
DTA114TE
ROHM : EMT3
DTA114TKA
ROHM : SMT3
EIAJ : SC-59
1.6
0.3
(3)
0.8
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 94
2.9
0.4
(3)
(2)
(1)
0.95 0.95
1.9
Abbreviated symbol : 94
0.7
0.55
1.6
0.15
1.1
0.8
1.6
2.8
0.15
0.1Min.
0.3Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.45
(15Min.)
0.45
0.5
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A114TS
Rev.A 1/2
DTA114TM / DTA114TE / DTA114TUA
Transistors DTA114TKA / DTA114TSA
zPackaging specifications zEquiv alent circuit
T2L
CE
EMT3
Taping
−
−
−
−
CBO
V
V
CEO
V
EBO
C
I
P
C
Tj
Tstg
BV
BV
BV
V
TL
3000
−
−
−
−
CBO
CEO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
−
−
−
−
−
−
−
−
Limits
DTA114TEDTA114TM
DTA114TUA DTA114TKA DTA114TSA
−50
−50
−5
−100
150 200 300
150
−55 to +150
Max. Unit Conditions
Typ.
Min.
−
250
10
250
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
600
13
−
EBO
1
T
−50
−50
−5
−
−
−
100
7
−
SPT
Taping
TP
5000
−
−
−
−
VI
V
V
µA
µA
V
−
kΩ
MHz
B
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
C/IB
=−10mA/−1mA
I
V
CE
=−5V, IC=−1mA
V
CE
=−10V, IE=5mA, f=100MHz∗
Unit
mA
mW
°C
°C
C
R1
E
V
V
V
−
=−
5V
−1
(V)
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
lC/lB=20
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
VMT3
Taping
8000
Part No.
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
DTA114TSA
Package
Package type
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
zElectrical characteristic curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−100µ−1m −10m −100m
Ta=100°C
25°C
−40°C
−200µ−2m −20m−500µ−5m −50m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
V
C
(A)
Rev.A 2/2
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