DTA114TM / DTA114TE / DTA114TUA
Transistors DTA114TKA / DTA114TSA
-100mA / -50V Digital transistors (with built-in resistors)
DTA114TM / DTA114TE / DTA1 14TUA
DTA114TKA / DTA114TSA
zApplica tions
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors en able the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolatio n to allow pos itive biasi ng of the in put. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy .
zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)
zExternal dimensions (Unit : mm)
DTA114TM
ROHM : VMT3
DTA114TUA
ROHM : UMT3
EIAJ : SC-70
DTA114TSA
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
Abbreviated symbol : 94
2.0
(3)
(2)
0.65
1.3
Abbreviated symbol : 94
3.0
0.2
0.40.4
0.8
0.2
0.3
1.25
(1)
0.65
4.0 2.0
3Min.
2.1
0.13
0.5
0.9
0.7
0.15
Each lead has same dimensions Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
0.1Min.
(2) Base
(3) Collector
DTA114TE
ROHM : EMT3
DTA114TKA
ROHM : SMT3
EIAJ : SC-59
1.6
0.3
(3)
0.8
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : 94
2.9
0.4
(3)
(2)
(1)
0.95 0.95
1.9
Abbreviated symbol : 94
0.7
0.55
1.6
0.15
1.1
0.8
1.6
2.8
0.15
0.1Min.
0.3Min.
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.45
(15Min.)
0.45
0.5
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2.5
5.0
(1) (2) (3)
Abbreviated symbol : A114TS
Rev.A 1/2
DTA114TM / DTA114TE / DTA114TUA
Transistors DTA114TKA / DTA114TSA
zPackaging specifications zEquiv alent circuit
T2L
CE
EMT3
Taping
−
−
−
−
CBO
V
V
CEO
V
EBO
C
I
P
C
Tj
Tstg
BV
BV
BV
V
TL
3000
−
−
−
−
CBO
CEO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
−
−
−
−
−
−
−
−
Limits
DTA114TEDTA114TM
DTA114TUA DTA114TKA DTA114TSA
−50
−50
−5
−100
150 200 300
150
−55 to +150
Max. Unit Conditions
Typ.
Min.
−
250
10
250
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
600
13
−
EBO
1
T
−50
−50
−5
−
−
−
100
7
−
SPT
Taping
TP
5000
−
−
−
−
VI
V
V
µA
µA
V
−
kΩ
MHz
B
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
C/IB
=−10mA/−1mA
I
V
CE
=−5V, IC=−1mA
V
CE
=−10V, IE=5mA, f=100MHz∗
Unit
mA
mW
°C
°C
C
R1
E
V
V
V
−
=−
5V
−1
(V)
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
lC/lB=20
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
VMT3
Taping
8000
Part No.
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
DTA114TSA
Package
Package type
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
zElectrical characteristic curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−100µ−1m −10m −100m
Ta=100°C
25°C
−40°C
−200µ−2m −20m−500µ−5m −50m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
V
C
(A)
Rev.A 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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