ROHM DAP202U Schematic [ru]

Data Sheet

)

Switching Diode

DAP202U

Applications Dimensions (Unit : mm) Land size figure (Unit : mm)

Ultra high speed switching

2.0±0.2

0.3±0.1

各リードとも

Each lead has same dimension

Features

1) Small mold type. (UMD3)

同寸法

(3)

2) High reliability.

1.25±0.1

(2) (1)

（0.65）

Construction

Silicon epitaxial planar Structure

（0.65）

1.3±0.1

week code (year week factory

0.15±0.05

2.1±0.1

0.7±0.1

0.9±0.1

ROHM :
JEDEC :S0T-323
JEITA : SC-70

0～0.1

0.9MIN.

UMD3

0.1Min

0.65

0.8MIN

1.3

1.6

Taping specifications (Unit : mm)

4.0±0.1

2.25±0.1
　　　　 0

2.0±0.05

Absolute maximum ratings (Ta=25°C)

Parameter Limits

Reverse voltage (repetitive peak)

Reverse voltage (DC) 80
Forward voltage (Single) 300

Average rectified forward current (Single)

Surge current (t=1us) (Single) 4
Power dissipation 200
Junction temperature 150
Storage temperature
Rated in slash put frequency 100

Symbol Unit

V

RM

V

R

I

FM

Io mA

I

surge

80

100

Pd mW

Tj °C

Tstg °C

55 to 150

f MHz

4.0±0.1

φ1.55±0.05

V
V

mA

A

φ0.5±0.05

0.3±0.1

1.75±0.1

3.5±0.05

8.0±0.2

2.4±0.1

5.5±0.2

0～0.1

2.4±0.1

1.25±0.1

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

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© 2011 ROHM Co., Ltd. All rights reserved.

V

F

I

R

- - 1.2 V

- - 0.1 μA
Ct - - 3.5 pF
trr - - 4 ns

1/2

I

=100mA

F

V

=70V

R

V

=6V , f=1MHz

R

VR=6V , IF=5mA , RL=50

2011.06 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DAP202U

℃

100

(mA)

F

10

Ta=150

1

FORWARD CURRENT : I

0.1
0 100 200 300 400 500 600 700 800 900 100

FORWARD VOLTAGE : V

Ta=75

℃

Ta=125

℃

V

CHARACTERISTICS

F-IF

F

(mV)

Ta=25

Ta=25

f=1MHz

100000

Ta=150

℃

Ta=125

℃

10

10000

(nA)

R

1000

℃

100

℃

10

REVERSE CURRENT : I

1

0.1

0

0 10203040506070

REVERSE VOLTAGE : VR(V)

V

CHARACTERISTICS

R-IR

Ta=75

Ta=25

Ta=25

℃

℃

℃

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0 5 10 15 20

REVERSE VOLTAGE : VR(V)

V

-Ct CHARACTERISTICS

R

900

890

(mV)

F

Ta=25

=100mA

I

F

n=30pcs

℃

880

100

90
80

(nA)

R

70

Ta=25

=70V

V

R

n=10pcs

℃

60
50

870

40
30

860

FORWARD VOLTAGE : V

AVE:877.0mV

850

DISPERSION MAP

V

F

20

(A)

15

FSM

Ifsm 1cyc

8.3ms

10

PEAK SURGE

AVE:2.50A

5

FORWARD CURRENT : I

0

I

DISRESION MAP

FSM

20

REVERSE CURRENT : I

10

0

AVE:17.93nA

IR DISPERSION MAP

10

℃

9
8
7
6

Ta=25

=6V

V

R

I

=5mA

F

RL=50Ω
n=10pcs

5
4
3
2

REVERSE RECOVERY TIME:trr(ns)

1
0

AVE:1.93ns

trr DISPERSION MAP

10

9
8
7
6
5
4
3

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

2
1
0

AVE:1.840pF

Ct DISPERSION MAP

5

(A)

4

FSM

Ifsm

8.3ms

3

2

PEAK SURGE

1

FORWARD CURRENT : I

0

1 10 100

NUMBER OF CYCLES

-CYCLE CHARACTERISTICS

I

FSM

1cyc

Ta=25

=6V

V

R

f=1MHz

n=10pcs

8.3ms

℃

100

(A)

FSM

Ifsm

t

10

PEAK SURGE

FORWARD CURRENT : I

1

0.1 1 10 100
TIME:t(ms)

-t CHARACTERISTICS

I

FSM

1000

/W)

℃

100

Mounted on epoxy board

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (

1

IM=10mA IF=100mA

time

1ms

300us

0.001 0.01 0.1 1 10 100 1000
TIME:t(s)

Rth-t CHARACTERISTICS

2/2

Rth(j-a)

Rth(j-c)

ELECTROSTATIC

10

9
8
7
6
5
4
3

DDISCHARGE TEST ESD(KV)

2
1
0

AVE:1.32kV

C=200pF

R=0Ω

AVE:5.47kV

C=100pF
R=1.5kΩ

ESD DISPERSION MAP

2011.06 - Rev.A