ROHM DAN217 Schematic [ru]

DAN217

Diodes

Switching diode

DAN217

zApplication zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
Ultra high speed switching

＋0.2

－0.1

1.6

2.9±0.2
各リードとも

＋0.1

Each lead has s am e dimension

同寸法

0.4

　－0.05

(2) (1)

0.95 0.95

1.9±0.2

＋0.1

0.15

(3)

－0.06

0.8±0.1

1.1±0.2

0.01

ROH M : SMD3
JEDEC :S0T-346
JEITA : SC-59

weekcode

0～0.1

0.3～0.6

SMD3

zFeatures

1) Small mold type. (SMD3)

2) High reliability.

2.8±0.2

zConstruction

Silicon epitaxial planar zStructure

zT aping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φ1.5±0.1
　　　　　 0

3.2±0.1

5.5±0.2

3.2±0.1

4.0±0.1

φ1.05MIN

0～0.5

zAbsolute maximum ratings (Ta=25°C)

everse voltage (repetitive peak)

R
Reverse voltage (DC)

orward current (Single)

F

verage rectified forward cur rent (Single)

A

urge current （t=1us

S

ower dissipation

P

unction temperature

J

torage temperature

S

Param e ter

）

Sym bol Unit

V

RM

V

R

I

FM

Io mA

I

surge

Pd m W

Tj

Tstg

Limits

80

80
300
100

4
200
150

-55 to +150

V
V

mA

A

℃
℃

zElectrical characteristics (Ta=25°C)

Parameter
Forward voltag e
Reverse current
Capacitance between termi nals
Reverse recovery time

Symbol Min. Typ. Max. Unit

V

F

I

R

--1.2V

--0.1µA
Ct - - 3.5 pF
trr - - 4 ns

I

F

V
V
V

1.9

0.95

1.0MIN.

0.8MIN.

0.3±0.1

1.75±0.1

3.5±0.05

8.0±0.2

3.2±0.1

1.35±0.1

Conditions

=100mA

=70V

R

=6V , f=1MHz

R

=6V , IF=5mA , RL=50

R

2.4

Ω

Rev.B 1/2

Diodes

zElectrical characteristic curves (Ta=25°C)

100

)

IF(mA

10

NT:

RD C

1

FORWA URRE

Ta=75℃

Ta=125℃

Ta=150℃

Ta=-25℃

Ta=25℃

10000

1000

100

REVERSE CURRENT:IR(nA)

0.1

DAN217

Ta=150℃

10

1

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

CAPACITANCE BETWEEN

10

1

TERMINALS:Ct(pF)

f=1MHz

0.1
0 100 200 300 400 500 600 700 800 900 100

FORWARD VO LTAGE：VF(mV)

VF-IF CHARACTERISTICS

950

940

930

920

910

FORWARD VO LTAGE:VF(mV)

900

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

AVE:921.7mV

VF DISPERSION MAP

AVE:3.50A

IFSM DISRESION M AP

Ifsm

Ta=25℃

IF=100mA

n=30pcs

1cyc

8.3ms

0.01

0

0 1020304050607080

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

100

90

80

70

60

50

40

30

20

REVERSE CURRENT:IR(nA)

10

0

10

9

8

7

6

5

4

3

2

RESERVE RECOVERY TIME:trr(ns)

1

0

AVE:9.655nA

IR DISPERSION MAP

AVE:1.93ns

trr DISPERSION M AP

Ta=25℃
VR=80V
n=10pcs

Ta=25℃

VR=6V

IF=5mA
RL=50Ω
n=10pcs

0.1
0 5 10 15 20

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

10

8.3ms
1cyc

Ta=25℃
VR=6V
f=1MHz
n=10pcs

8.3ms

9

8

7

6

5

4

3

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

2

1

0

5

4

3

2

PEAK SURGE

1

FORWARD CURRENT:IFSM(A)

0

110100

AVE:1.17pF

Ct DISPERSION M AP

Ifsm

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

100

10

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1

0.1 1 10 100

TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

t

1000

100

ｶﾞﾗｽｴﾎﾟｷｼ基板実装時

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (℃/W )

1

0.001 0.1 10 1000

Mounted on epoxy board

IM=1mA IF=10mA

IM=100mA IF=10A

time

1ms

1ms

300us

300us

TIME:t(s)

Rth-t CHARACTERISTICS

time

10

9

8

7

6

5

4

ELECTROSTATIC

DISCHARG E TEST ESD( KV)

AVE:0.97kV

3

2

1

0

C=200pF

R=0Ω

ESD DISPERSION M AP

AVE:2.54kV

C=100pF
R=1.5kΩ

Rev.B 2/2