Datasheet DAN202UM Datasheet (ROHM) [ru]

Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

Switching Diode

DAN202UM

lApplications lDimensions (Unit : mm) 　　lLand size figure (Unit : mm)

High speed switching

lFeatures

1)Ultra small mold type. (UMD3F)

2)High reliability

lConstruction

Silicon epitaxial planer

lStructure

lAbsolute maximum ratings (Ta=25C)

Symbol Unit

V

RM

V

V

R

V

I

FM

mA

Io mA

I

surge

A

Pd mW

Tj

C

Tstg

C

lElectrical characteristics (Ta=25C)

Symbol Min. Typ. Max. Unit Conditions

V

F

- - 1.2 V

IF=100mA

I

R

- - 0.1 μA

VR=70V

Ct - - 3.5 pF

VR=6V , f=1MHz

trr - - 4 ns

VR=6V , IF=5mA , RL=50Ω

Reverse voltage (DC)

80

lTaping dimensions (Unit : mm)

Parameter

Limits

Reverse voltage (repetitive peak)

80

Forward current (single)

300

Average rectified forward voltage (single)

100

Surge current (t=1us)

4

Power dissipation

200

Junction temperature

150

Storage temperature

-55 to +150

Reverse recovery time

Parameter

Forward voltage

Reverse current

Capacitance between terminals

UMD3

0.9MIN.

1.6

0.65

1.3

0.8MIN

ROHM : UMD3F

JEITA : SC-70

JEDEC : SOT-323

dot (year week factory)

2.0±0. 1

2.1±0.1

1.3±0. 1

1.25±0.1

0.65

0.65

0.32

+0.1

-0.05

0～0.1

0.13±0 .05

(1)

(3)

(2)

0.425

0.425

0.9±0. 1

0.53±0.1

各リードとも

同寸法

0.53±0.1

Each lead has

same dimensions

4.0±0.1

4.0±0.1

2.0±0.05

φ 1.55 ±0.05

3.5±0.05

1.75±0.1

8.0±0.2

φ 0.5±0 .05

2.4±0.1

2.25±0.1
　　　　 0

5.5±0.2

1.25±0.1

2.4±0.1

0.3±0.1

0～0.1

1/3

2011.12 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DAN202UM

0.001

0.01

0.1

1

10

100

0 100 200 300 400 500 600 700 800 900 1000

Ta=25°C

Ta=75°C

Ta=125°C

Ta=150°C

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

FORWARD CURRENT:I

F

(mA)

0.1

1

10

100

1000

10000

100000

0 10 20 30 40 50 60 70 80

Ta=25°C

Ta=75°C

Ta=125°C

Ta=150°C

REVERSE CURRENT:I

R

(nA)

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

0.1

1

10

0 5 10 15 20

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

f=1MHz

860

870

880

890

900

910

920

930

940

VF DISPERSION MAP

FORWARD VOLTAGE:V

F

(mV)

AVE:899mV

Ta=25°C

IF=100mA

n=30pcs

0

10

20

30

40

50

REVERSE CURRENT:I

R

(nA)

IR DISPERSION MAP

Ta=25°C

VR=80V

n=10pcs

AVE:14nA

0

1

2

3

Ta=25°C

VR=6V

f=1MHz

n=10pcs

AVE:0.7pF

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

Ct DISPERSION MAP

2/3

2011.12 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DAN202UM

0

5

10

15

20

AVE:3.50A

I

FSM

DISPERSION MAP

PEAK SURGE

FORWARD CURRENT:I

FSM

(A)

8.3ms

I

FSM

1cyc

0

1

2

3

4

5

6

7

8

9

10

AVE:1.93ns

Ta=25°C

VR=6V

IF=5mA

RL=50Ω

n=10pcs

trr DISPERSION MAP

REVERSE RECOVERY TIME:trr(ns)

0

1

2

3

4

5

1 10 100

PEAK SURGE

FORWARD CURRENT:I

FSM

(A)

NUMBER OF CYCLES

I

FSM

-CYCLE CHARACTERISTICS

8.3ms

I

FSM

1cyc

8.3ms

1

10

100

1 10 100

PEAK SURGE

FORWARD CURRENT:I

FSM

(A)

TIME:t(ms)

I

FSM

-t CHARACTERISTICS

t

I

FSM

1

10

100

1000

0.001 0.01 0.1 1 10 100 1000

Rth(j-a)

Rth(j-c)

Mounted on epoxy board

TIME:t(s)

Rth-t CHARACTERISTICS

TRANSIENT

THERMAL IMPEDANCE:Rth (

°

C/W)

0

1

2

3

4

5

6

7

8

9

10

AVE:0.97kV

C=200pF

R=0Ω

C=100pF

R=1.5kΩ

AVE:2.54kV

ELECTROSTATIC

DISCHARGE TEST ESD(KV)

ESD DISPERSION MAP

3/3

2011.12 - Rev.A

Notes

Notice

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