ROHM DAN202UM Schematic [ru]

Data Sheet
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAN202UM
High speed switching
lFeatures
1)Ultra small mold type. (UMD3F)
2)High reliability
lConstruction
Silicon epitaxial planer
lStructure
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
V
RM
V
V
R
V
I
FM
mA
Io mA
I
surge
A
Pd mW
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
V
F
- - 1.2 V
IF=100mA
I
R
- - 0.1 μA
VR=70V
Ct - - 3.5 pF
VR=6V , f=1MHz
trr - - 4 ns
VR=6V , IF=5mA , RL=50Ω
Reverse voltage (DC)
80
lTaping dimensions (Unit : mm)
Parameter
Limits
Reverse voltage (repetitive peak)
80
Forward current (single)
300
Average rectified forward voltage (single)
100
Surge current (t=1us)
4
Power dissipation
200
Junction temperature
150
Storage temperature
-55 to +150
Reverse recovery time
Parameter
Forward voltage
Reverse current
Capacitance between terminals
UMD3
0.9MIN.
1.6
0.65
1.3
0.8MIN
ROHM : UMD3F
JEITA : SC-70
JEDEC : SOT-323
dot (year week factory)
2.0±0. 1
2.1±0.1
1.3±0. 1
1.25±0.1
0.65
0.65
0.32
+0.1
-0.05
0~0.1
0.13±0 .05
(1)
(3)
(2)
0.425
0.425
0.9±0. 1
0.53±0.1
各リードとも
同寸法
0.53±0.1
Each lead has
same dimensions
4.0±0.1
4.0±0.1
2.0±0.05
φ 1.55 ±0.05
3.5±0.05
1.75±0.1
8.0±0.2
φ 0.5±0 .05
2.4±0.1
2.25±0.1      0
5.5±0.2
1.25±0.1
2.4±0.1
0.3±0.1
0~0.1
1/3
2011.12 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN202UM
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=25°C
Ta=75°C
Ta=125°C
Ta=150°C
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:I
F
(mA)
0.1
1
10
100
1000
10000
100000
0 10 20 30 40 50 60 70 80
Ta=25°C
Ta=75°C
Ta=125°C
Ta=150°C
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
0.1
1
10
0 5 10 15 20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
860
870
880
890
900
910
920
930
940
VF DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
AVE:899mV
Ta=25°C
IF=100mA
n=30pcs
0
10
20
30
40
50
REVERSE CURRENT:I
R
(nA)
IR DISPERSION MAP
Ta=25°C
VR=80V
n=10pcs
AVE:14nA
0
1
2
3
Ta=25°C
VR=6V
f=1MHz
n=10pcs
AVE:0.7pF
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
2/3
2011.12 - Rev.A
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