ROHM BU9829GUL-W Technical data

A

High Reliability Serial EEPROMs

WL-CSP EEPROM family SPI BUS

BU9829GUL-W

●Description

BU9829GUL-W is Serial EEPROM built-in LDO regulator by SPI BUS interface.

●Features ○EEPROM PART

1) 2,048 words×8 bits architecture serial EEPROM

2) Wide operating voltage range (1.6V～3.6V)

3) Serial Peripheral Interface

4) Self-timed write cycle with automatic erase

5) Low Power consumption Write (3.6V) : 1.5mA (Typ.) Read (3.6V) : 0.5mA (Typ.) Standby (3.6V) : 0.1µA (Typ.)

6) Auto-increment of registers address for Read mode

7) 32 byte Page Write mode

8) DATA security Defaults to power up with write-disabled state Software instructions for write-enable/disable Block writes protection by status register Write inhibit at low Vcc

9) Initial data FFh in all address, 00h in status register and 10 in VSET[1:0].

10) Data retention: 10 years

11) Endurance : 100,000 erase/write cycles ○LDO REGULATOR PART

12) Low power consumption Standby (3.6V) : 0.1 µA (Typ.) Operation (3.6V) : 0.1mA (Typ.)

13) Power on/off by enable pin

14) Initial LDO output voltage 2.9V

15) Setting output voltage by EEPROM command (VSET WRITE)

●Absolute maximum rating (Ta=25℃)

Parameter Symbol Rating Unit

Supply Voltage

Power Dissipation Pd 220 mW Storage Temperature Tstg -65 ～ 125 ℃ Operating Temperature Topr -30 ～ 85 ℃ Terminal Voltage － -0.3～Vcc＋0.3 V

●EEPROM recommended operating condition

Parameter Symbol Rating Unit

Supply Voltage Vcc1 1.6～3.6 Input Voltage VIN 0～Vcc1

●LDO regulator recommended operating condition

Parameter Symbol Rating Unit

Supply Voltage Vcc2 2.9～3.6 Input Voltage VIN 0～Vcc2

Vcc1(EEPROM)

Vcc2(LDO)

-0.3～4.5 V

No.10001EAT13

V

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BU9829GUL-W

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Technical Note

●Memory cell characteristics (Ta=25℃, Vcc1=1.6～3.6V) ●Input/output capacity (Ta=25℃, Frequency=5MHz)

Parameter

Write/Erase Cycle *1 100,000 －－ Cycle Input Capacitance *1CIN VIN=GND － 8pF

Min. Typ. Max. Min. Max.

Data Retention *1 10 －－ Year Output Capacitance*1C

*1 : Not 100% tested *1:Not 100% TESTED

Limits

Unit Parameter Symbol Conditions

OUTVOUT

=GND － 8pF

Limits

Unit

●EEPROM DC operating characteristics (Unless otherwise specified, Ta=-30～85℃, Vcc1=1.6～3.6V)

Parameter Symbol

Min. Typ. Max.

Limits

Unit Test condition

"H" Input Voltage1 VIH1 0.7xVcc1 － Vcc1+0.3 V 2.5≦Vcc1≦3.6V "H" Input Voltage2 VIH2 0.75xVcc1 － Vcc1+0.3 V 1.6≦Vcc1＜2.5V "L" Input Voltage1 VIL1 -0.3 － 0.3xVcc1 V 2.5V≦Vcc1≦3.6V "L" Input Voltage2 VIL2 -0.3 － 0.25xVcc1 V 1.6V≦Vcc1＜2.5V "L" Output Voltage1 VOL1 0 － 0.2 V IOL=1.0mA , 2.5V≦Vcc1≦3.6V "L" Output Voltage2 VOL2 0 － 0.2 V IOL=1.0mA , 1.6V≦Vcc1＜2.5V "H" Output Voltage1 VOH1 Vcc1-0.2 － Vcc1 V IOH=-0.4mA , 2.5V≦Vcc1≦3.6V "H" Output Voltage1 VOH2 Vcc1-0.2 － Vcc1 V IOH=-100µA , 1.6V≦Vcc1＜2.5V Input Leakage Current ILI -1 － 1 µA VIN=0～Vcc1 Output Leakage Current ILO -1 － 1 µA VOUT=0～Vcc1 , CSB=Vcc1

ICC1 －－ 1.5 mA

Operating Current Write

ICC2 －－ 2.0 mA

ICC3 －－ 0.2 mA

Operating Current Read

ICC4 －－ 0.6 mA

Standby Current ISB －－ 1.0 µA

○This product is not designed for protection against radioactive rays.

Vcc1=1.8V , fSCK =2MHz, tE/W=5ms Byte Write, Page Write, Write Status Register

Vcc1=2.5V , fSCK =5MHz,tE/W=5ms Byte Write, Page Write, Write Status Register

Vcc1=1.8V , fSCK=2MHz , SO=OPEN Read, Read Status Register

Vcc1=2.5V , fSCK=5MHz,SO=OPEN Read, Read Status Register

Vcc1=3.6V , CSB=Vcc1 , SCK , SI=Vcc1/GND ,SO=OPEN

●EEPROM AC operating characteristics (Ta=-30～85℃)

Parameter Symbol

1.6≦VCC1＜1.8V 1.8≦VCC1≦3.6V

Min. Typ. Max. Min. Typ. Max.

Unit

SCK clock Frequency fSCK －－ 2.5 －－ 5 MHz SCK High Time tSCKWH 200 －－ 80 －－ ns SCK Low Time tSCKWL 200 －－ 80 －－ ns CSB High Time tCS 200 －－ 90 －－ ns CSB Setup Time tCSS 150 －－ 60 －－ ns CSB Hold Time tCSH 150 －－ 60 －－ ns SCK Setup Time tSCKS 50 －－ 50 －－ ns SCK Hold Time tSCKH 50 －－ 50 －－ ns SI Setup Time tDIS 50 －－ 20 －－ ns SI Hold Time tDIH 50 －－ 20 －－ ns Output Data Delay Time tPD －－ 100 －－ 80 ns Output Hold Time tOH 0 －－ 0 －－ ns Outuput Disable Time SCK Rise Time SCK Fall Time Output Rise Time Output Fall Time

*1

tOZ －－ 200 －－ 80 ns

*1

tRC －－ 1 －－ 1 µs

*1

tFC －－ 1 －－ 1 µs

*1

tRO －－ 50 －－ 50 ns

*1

tFO －－ 50 －－ 50 ns

Write Cycle Time tE/W －－ 5 －－ 5 ms

Wait Time From Vcc1 ON To EEPROM Command

*1 : Not 100% tested

tON 15 －－ 15 －－ ms

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Technical Note

●Synchronous data input/output timing

VCC1

CSB

SCK

SI

SO

tON

tSCKS

tCSS

tSCKWL tSCKWH

tDIH

tDIS

Hi-Z

tRC

CSB

SCK

tFC

SI

SO

tPD

tOH

tCSH

tRO,tFO

tCS

tSCKH

tOZ

Hi-Z

Fig.1 Input timing

Fig.2 Input and output timing

SI data is latched into the chip at the rising edge of SCK clock. Address and data must be transferred from MSB.

SO data toggles at the falling edge of SCK clock. Output data toggles from MSB.

●AC condition

Parameter Symbol

Limits

Min. Typ. Max.

Unit

Load Capacitance CL - - 100 pF

Input Rise times - - - 50 ns

Input Fall times - - - 50 ns

Input Pulse Voltage - 0.25Vcc1/0.75Vcc1 V

Input and Output Timing Reference Voltages - 0.3VCc1/0.7Vcc1 V

●Pin configuration ●Pin function

Land

No.

C

C1

B

B1

A

A1

C2

B2

A2

C3

B3

A3

INDEX POST

A1 Vcc1 － Power Supply (EEPROM)

A2 CSB IN Chip Select Control

A3 SCK IN Serial Data Clock Input B1 Vcc2 － Power Supply (LDO)

B2 SI IN Start Bit, Op.code, Address, Serial Data Input

Name

I/O Function

B3 SO OUT Serial Data Output

1

2

3

C1 V

OUT LDO Regulator Output

OUT

C2 GND － Ground (0V)

Fig.3 Pin configuration (bottom view)

C3 LDOEN IN LDO Regulator Enable

●LDO regulator DC operating characteristics (Unless otherwise specified Ta=-30～85℃)

Parameter Symbol

Specification

Min. Typ. Max.

Unit test condition

Output Voltage1-1 VOUT1-1 2.9 3.0 3.2 V 3.2V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[1:1] Output Voltage1-2 VOUT1-2 2.9 3.0 3.1 V 3.2V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[1:1] Output Voltage2-1 VOUT2-1 2.8 2.9 3.1 V 3.1V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[1:0] Output Voltage2-2 VOUT2-2 2.8 2.9 3.0 V 3.1V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[1:0] Output Voltage3-1 VOUT3-1 2.7 2.8 3.0 V 3.0V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[0:1] Output Voltage3-2 VOUT3-2 2.7 2.8 2.9 V 3.0V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[0:1] Output Voltage4-1 VOUT4-1 2.6 2.7 2.9 V 2.9V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[0:0] Output Voltage4-2 VOUT4-2 2.6 2.7 2.8 V 2.9V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[0:0]

Operating Current ICC - - 200 µA Vcc2=3.6V, IOUT=0A

Standby Current ISB - - 1.0 µA Vcc2=3.6V, IOUT=0A, LDOEN=GND “H” Input Voltage VIH 1.4 - Vcc2+0.3 V 2.9V≦Vcc2≦3.6V “L” Input Voltage VIL -0.3 - 0.6 V 2.9V≦Vcc2≦3.6V

○This product is not designed for protection against radioactive rays.

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r

y

Technical Note

●LDO regulator AC operating characteristics

Parameter Symbol

Specification

Min. Typ. Max.

Unit Test condition

Vcc1 Rise Time tVCC1 - - 5 msec VCC1 x 0%→VCC1 x 95% point

LDOEN Wait Time tLDOEN 15 - - msec VCC1 x 0%point→ LDOEN=High

●Output voltage depend on VSET bit The 2bit data are stored into the VSET memory and output voltage change among VOUT1～VOUT4. VSET data are Written into non-volatile memory array. Initial VSET data is 1,0 in VSET[1:0] and VOUT is 2.9V.

STEP VOUT(typ.) [V] VSET1 VSET0

VOUT1 VOUT2 VOUT3 VOUT4

3.0

2.9

2.8

2.7

1 1 0 0

1 0 1 0

●Input power supply regulation timing

①Using EEPROM PART

In case of using EEPROM part, be sure to raise Vcc1 up to operating voltage. In this time, Vcc2 has no connection with operating.

Vcc1

EEPROM

EEPROM部電源

Power Supply

Vcc2

LDOレギュレータ部電源

LDO regulator

Power Supply

Not

動作不可 EEPROM動作可能範囲動作不可 EEPROM動作可能範囲動作不可

Operating

Not Operating

Operating

Not Operating

Fig.4 Using EEPROM Part, Regulation Timing

②Using LDO regulator part

In case of using LDO regulator part, be sure to raise Vcc1 and Vcc2 up to operating voltage. After rising Vcc1, wait 15msec and rising LDOEN. When LDOEN is raised, Vcc1 must be operating voltage.

tVcc1:MAX 5msec

Vcc1

EEPROM

Power Suppl

Vcc2

LDO regulato

Power Supply

LDOEN

t

LDOEN : MIN 15msec

t

LDOEN : MIN 15msec

Not Operating

Operating

Not Operating

Operating

Not Operating

Fig.5 Using LDO Regulator Part, Regulation Timing

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●Block diagram

CSB

SCK

INSTRUCTION

DECODE

CONTROL CLOCK

GENERATION

SI

INSTRUCTION

REGISTER

ADDRESS

REGISTER

INHIBITION

DETECTION

WRITE

11bit

VOLTAGE

ADDRESS

DECODER

SO

DATA

REGISTER

8bit

VOUT

AMP

+

B.R

RESISTOR

Fig.6 Block diagram

●Characteristic data (The following characteristic data are typical values.)

5

Ta=-30℃

4

Ta=25℃ Ta=85℃

3

VIH[V]

2

1

0

01234

Fig.7 　"H" input voltage　VIH (EEPROM)

3

2.5

2

1.5

VOH[V]

1

0.5

0

0 0.4 0.8 1.2

4

3

SPEC

Vcc[V]

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

IOH[mA]

Fig.10　"H" output voltage VOH

fSCK=2MHz DATA=00h

SPEC

2

ICC1[mA]]

1

0

01234

Fig.13　Current consumption at WRITE operation ICC1

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SPEC

Vcc[V]

Ta=-40℃ Ta=-30℃ Ta=25℃ Ta=85℃

5

Ta=-30℃

4

Ta=25℃ Ta=85℃

3

VIL[V]

2

1

0

01234

Fig.8 　"L" input voltage　VIL (EEPROM)

5

4

Ta=-30℃ Ta=25℃

3

Ta=85℃

ILI[μA]

2

1

0

01234

Fig.11　Input leak current ILI

2.5

fSCK=2MHz

2

DATA=AAh

1.5

1

ICC3(READ)[mA]

0.5

0

01234

Fig.14　Consumption Current at READ operation ICC3

SPEC

Vcc[V]

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

5/16

HIGH VOLTAGE

GENERATOR

11bit

16,384 bit

EEPROM

R/W

8bit

AMP

LDOEN

2bit

VOUT SETTING REGISTER

1

Ta=-30℃ Ta=25℃

0.8

Ta=85℃

0.6

VOL[V]

0.4

0.2

SPEC

0

0123

5

4

Ta=-30℃ Ta=25℃

3

Ta=85℃

ILO[μA]

2

1

0

01234

Fig.12　Output leak current ILO

12

10

Ta=-30℃ Ta=25℃ Ta=85℃

8

6

ISB[μA]

4

2

0

01234

Fig.15　Standby operation ISB (EEPROM)

Technical Note

SPEC

IOL[mA]

Fig.9　"L" output voltage VOL

SPEC

VOUT[V]

SPEC

Vcc[V]

2010.09 - Rev.

BU9829GUL-W

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(

)

●Characteristic data

100

10

fSCK[MHz]

1

Ta=-30℃ Ta=25℃ Ta=85℃

0.1 01234

250

200

Ta=-30℃ Ta=25℃

150

Ta=85℃

tCS[ns]

100

50

0

01234

60

40

Ta=-30℃ Ta=25℃ Ta=85℃

tDIS[ns]

20

SPEC

Vcc[V]

Fig.16　SCK frequency fSCK

SPEC

Vcc[V]

Fig.19 CSB high time　tCS

SPEC

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0

01234

250

200

Ta=-30℃ Ta=25℃

150

Ta=85℃

tOZ [ns]

100

50

0

01234

3

2.5

Ta=-30℃ Ta=25℃ Ta=85℃

2

1.5

VIH[V]

1

0.5

0

01234

Fig.28 "H" input voltage VIH (L DO)

3.2

3.1

3

VOUT[V]

2.9

2.8

2.7

0246810121416

Vcc[V]

Fig.22　SI setup time　tDIS

SPEC

Fig.25　Output disable time tOZ

SPEC

Vcc[V]

Ta=-30℃ Ta=25℃ Ta=85℃

SPEC

Iout[mA]

Fig.31 Vout response (LDO)

VSET=1,0

SPEC

250

200

150

100

tSCKWH [ns]

50

0

01234

200

160

120

tCSS[ns]

80

40

0

01234

60

40

tDIH[ns]

20

0

01234

8

6

4

tE/W[ms]

2

0

01234

3

2.5

2

1.5

VIL[V]

1

0.5

0

250

200

150

ICC[uA]

100

50

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

Vcc[V]

Fig.17 SCK high time　tSCKWH

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

Vcc[V]

Fig.20　CSB setup time　tCSS

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

Vcc[V]

Fig.23　SI hold time　tDIH

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

Vcc[V]

Fig.26 Write cycl e time tE/W

Ta=-30℃ Ta=25℃ Ta=85℃

01234

Fig.29 "L" input voltage VIL (LDO)

Ta=-30℃ Ta=25℃ Ta=85℃

0

01234

Fig.32 Current consumption ICC (LDO)

Vcc[V]

SPEC

6/16

Technical Note

250

200

Ta=-30℃

150

Ta=25℃ Ta=85℃

100

tSCKWL [ns]

50

0

01234

200

160

Ta=-30℃

120

Ta=25℃ Ta=85℃

tCSH[ns]

80

40

0

01234

120

100

80

60

tPD [ns]

40

20

0

01234

8

6

Ta=-30℃

4

Ta=25℃

ISB[us]

Ta=85℃

2

0

01234

Fig.27 Standby operation ISB (LDO)

160

120

Ta=-30℃ Ta=25℃ Ta=85℃

80

tVcc1[us]

40

0

01234

SPEC

Vcc[V]

Fig.18 SCK low time　tSCKWL

SPEC

Vcc[V]

Fig.21　CSB hold time　tCSH

SPEC

Ta=-30℃ Ta=25℃ Ta=85℃

Vcc[V]

Fig.24　Data output delay time　tPD

Vcc[V]

=

Vcc[V]

Fig.30 Vcc1 rise time tVcc1

2010.09 - Rev.

SPEC