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Structure Silicon Monolithic Integrated Circuit
Function Synchronous Rectifier Step-down DC-DC Converter
Product
Function - Input voltage range 2.5V ~ 4.5V
- Output voltage range 0.95 V ~ 4.5V(REF input voltage range 0.5V~VIN)
Absolute Maximum rating (Ta=25c)
(*1) When mounted on the specified PCB (50 mm x 58 mm ). Deducted by 4.8m W/c when used over Ta=25c.
BU9006GUZ
- Current mode control
- Integrated output FET synchronous rectifier step-down DC-DC converter
- Switching frequency 2.0MHz typ.
- Maximum output current 750mA (Switching regulator part)
- Maximum output current 1200mA (Bypass switch part)
- PchFET on resistance at bypass mode: (70mohm) typ.
- 1.6mm x 1.6mm, t=0.4mm MAX, WLCSP
Item Symbol Rating Unit
Maximum input
power supply voltage
Power dissipation Pd 0.48(*1) W
Operating temperature
range
Storage temperature
range
Junction temperature Tjmax +125 C
VIN 7 V
Topr -35 ~ +85 C
Tstg -55 ~ +125 C
Operating range (Ta=25c)
Item Symbol
Power supply voltage
VIN
Rating
Min. Typ. Max.
2.5 - 4.5 V
Unit
Condit
ion
REV. A
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Electrical characteristics
(unless otherwise specified IN=3.6[v], Ta=25[c])
Item Symbol
Min. Typ. Max.
Rating
Unit Condition
[Switching regulator part]
Output voltage 1
Output voltage 2
VOUT1 1.15 1.20 1.25
VOUT2 1.45 1.50 1.55
V REFIN=0.60 V
V REFIN=0.75 V
[Soft start part]
Soft start time Tss -
40 70
usec
[Oscillator circuit]
Switching frequency fosc 1.5 2.0 2.5 MHz
[Driver part]
PchFET on resistance RonP
NchFET on resistance RonN
- 300 500 mΩ
- 250 450 mΩ
[Bypass switch part]
On resistance RBYP - 70 120 mΩ
[Error Amp part]
REF input bias current IAMPIN - 0 500 nA
[Control pin part]
SHDN pin pull down resistor RSHDN 0.5 1 2 MΩ
SHDN pin control
voltage
Operation VSHDNH 1.4 - VIN V
Non operation
VSHDNL 0 - 0.4 V
HP pin pull down resistor RHP 0.5 1 2 MΩ
HP pin control
voltage
Operation VHPH 1.4 - VIN V
Non operation
VHPL 0 - 0.4 V
【UVLO】
Release voltage threshold Uvth 1.95 2.2 2.45 V
Hysteresis Uvhy 70 90 110 mV
[Circuit current]
Circuit current at shutdown IIN - 0 10 uA SHDN=0V
* No design for durability against radiation
REV. A