High Speed with Low Voltage
CMOS Operational Amplifiers
Input-Output Full Swing
BU7291G,BU7291SG,BU7255HFV,BU7255SHFV
Ground sense
BU7495HFV,BU7495SHFV,BU7481G,BU7481SG
BU7485G,BU7485SG,BU5281G,BU5281SG
●Description
Low Voltage with High Speed CMOS Op-Amp integrates one independent output full swing Op-Amps and phase
compensation capacitors on a single chip. Especially, this series is operable with low voltage, low supply current, high speed
and low input bias current.
・Input-Output Full Swing
BU7291 family, BU7255 family
・Ground sense
BU7495 family, BU7481 family,
BU7485 family, BU5281 family
●Features
1) Low operating supply voltage
+2.4 [V] ~ +5.5 [V] (single supply): BU7291 family
BU7255 family
+1.8 [V] ~ +5.5 [V] (single supply): BU7495 family
BU7481 family
BU5281 family
+3.0 [V] ~ +5.5 [V] (single supply): BU7485 family
2) High large signal voltage gain
3) Internal ESD protection
Human body model (HBM) ±4000 [V] (Typ.)
Note: Absolute maximum rating item indicates the condition which must not be exceeded.
Application of voltage in excess of absolute maximum rating or use out absolute maximum rated
temperature environment may cause deterioration of characteristics.
(*1) The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
High Level Output Voltage VOH 25℃ VDD-0.1- - V RL=10[kΩ]
Low Level Output Voltage VOL 25℃ - - VSS+0.1 V RL=10[kΩ]
Large Signal Voltage Gain AV 25℃ 70 105 - dB RL=10[kΩ]
Input Common-mode
Voltage Range
Vicm 25℃ 0 -3 V VSS ~ VDD
Common-mode Rejection Ratio CMRR 25℃ 40 60 - dB -
Power Supply Rejection Ratio PSRR 25℃ 45 80 - dB -
Output Source Current
Output Sink Current
(*4)
IOH 25℃ 5 8 - mA VDD-0.4[V]
(*4)
IOL 25℃ 9 16 - mA VSS+0.4[V]
Slew Rate SR 25℃ - 3.0 - V/μs CL=25[pF]
Gain Band width FT 25℃ - 2.8 - MHz CL=25[pF], AV=40[dB]
Phase Margin θ 25℃ - 50 - ° CL=25[pF], AV=40[dB]
Total Harmonic Distortion THD 25℃ - 0.03 - % VOUT=0.8[Vp-p],f=1[kHz]
(*2) Absolute value
(*3) Full range BU7291: Ta=-40[℃]~+85[℃] BU7291S: Ta=-40[℃]~+105[℃]
(*4) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
High Level Output Voltage VOH 25℃ VDD-0.1- - V RL=10[kΩ]
Low Level Output Voltage VOL 25℃ - - VSS+0.1 V RL=10[kΩ]
Large Signal Voltage Gain AV 25℃ 60 105 - dB RL=10[kΩ]
Input Common-mode
Voltage Range
Vicm 25℃0 - 3 V VSS ~ VDD
Common-mode Rejection Ratio CMRR 25℃ 40 60 - dB -
Power Supply Rejection Ratio PSRR 25℃ 45 80 - dB -
Output Source Current
Output Sink Current
(*7)
IOH 25℃ 2 4 -mA VDD - 0.4[V]
(*7)
IOL 25℃ 4 8 -mA VSS + 0.4[V]
Slew Rate SR 25℃ - 3.4 - V/μs CL=25[pF]
Gain Band width FT 25℃ - 4 - MHz CL=25[pF], AV=40[dB]
Phase Margin θ 25℃ - 40 - ° CL=25[pF], AV=40[dB]
(*5) Absolute value
(*6) Full range BU7255: Ta=-40[℃]~+85[℃] BU7255S: Ta=-40[℃]~+105[℃]
(*7) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
(*8) Absolute value
(*9) Full range BU7495: Ta=-40[℃]~+85[℃] BU7495S: Ta=-40[℃]~+105[℃]
(*10) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC
(*11) Absolute value
(*12) Full range BU7481: Ta=-40[℃]~+85[℃] BU7481S: Ta=-40[℃]~+105[℃]
(*13) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
(*14) Absolute value
(*15) Full range BU7485: Ta=-40[℃]~+85[℃] BU7485S: Ta=-40[℃]~+105[℃]
(*16) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
High Level Output Voltage VOH 25℃ VDD-0.1- - V RL=10[kΩ]
Low Level Output Voltage VOL 25℃ - - VSS+0.1 V RL=10[kΩ]
Large Signal Voltage Gain AV 25℃ 70 110 - dB RL=10[kΩ]
Input Common-mode
Voltage Range
Vicm 25℃ 0 -1.8 V VSS ~ VDD - 1.2[V]
Common-mode Rejection Ratio CMRR 25℃ 45 60 - dB -
Power Supply Rejection Ratio PSRR 25℃ 60 80 - dB -
Output Source Current
Output Sink Current
(*19)
IOH 25℃ 5 8 - mA VDD-0.4[V]
(*19)
IOL 25℃ 10 16 - mA VSS+0.4[V]
Slew Rate SR 25℃ - 2.0 - V/μs CL=25[pF]
Gain Band width FT 25℃ - 3 - MHz CL=25[pF], AV=40[dB]
Phase Margin θ 25℃ - 40 - ° CL=25[pF], AV=40[dB]
1/2
- 18 - nV/(Hz)
AV=40[dB], f=1[kHz]
Input Referred Noise Voltage Vin 25℃
- 3.2 -μVrms AV=40[dB], DINAUDIO
Total Harmonic Distortion THD 25℃ - 0.003- % VOUT=0.4[Vp-p], f=1[kHz]
(*17) Absolute value
(*18) Full range BU5281: Ta=-40[℃]~+85[℃] BU5281S: Ta=-40[℃]~+105[℃]
(*19) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
Voltage gain is 0 [dB].
This circuit controls output voltage (Vout) equal input
voltage (Vin), and keeps Vout with stable because of
high input impedance and low output impedance.
Vout is shown next formula.
Vout=Vin
For inverting amplifier, Vin is amplified by voltage gain
decided R1 and R2, and phase reversed voltage is
outputted. Vout is shown next formula.
Vout=-(R2/R1)・Vin
Input impedance is R1.
For non-inverting amplifier, Vin is amplified by voltage
gain decided R1 and R2, and phase is same with Vin.
Vout is shown next formula.
Vout=(1+R2/R1)・Vin
This circuit realizes high input impedance because
Input impedance is operational amplifier’s input
Impedance.
●Derating Curve
Power dissipation (total loss) indicates the power that can be consumed by IC at Ta=25℃(normal temperature).IC is heated
when it consumed power, and the temperature of IC ship becomes higher than ambient temperature. The temperature that
can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited.
Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal
resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum
value in the storage package (heat dissipation capability). The maximum junction temperature is typically equal to the
maximum value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or
lead frame of the package. The parameter which indicates this heat dissipation capability (hardness of heat release) is called
thermal resistance, represented by the symbol θj-a[℃/W]. The temperature of IC inside the package can be estimated by
this thermal resistance.
Fig.149 (a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient temperature Ta, junction
temperature Tj, and power dissipation Pd can be calculated by the equation below:
θja = (Tj-Ta) / Pd [℃/W] ・・・・・ (Ⅰ)
Derating curve in Fig.149 (b) indicates power that can be consumed by IC with reference to ambient temperature. Power that
can be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal
resistance θja. Thermal resistance θja depends on chip size, power consumption, package, ambient temperature, package
condition, wind velocity, etc even when the same of package is used. Thermal reduction curve indicates a reference value
measured at a specified condition. Fig.150(c)-(d) show a derating curve for an example of BU7291 family, BU7255 family, ,
BU7495 family , BU7481 family , BU7485 family , BU5281 family.
θja
(Tj
Ta) / P d [
=
-
mbient temperature
/ W]
℃
Ta [℃ ]
Package face temperature
Ta [℃]
P2
P1
Chip surface temperature
(a) Thermal resistance
Tj[
℃
Pd[W]
]
Power dissipation of IC
(a) Thermal resistance
1000
800
600
400
Fig.149 Thermal resistance and derating
BU7291G(*20)
540[mW]
BU7481G(*20)
BU7485G(*20)
BU5281G(*20)
BU7255HFV(*21)
535[mW]
BU7495HFV(*21)
[W]
Pd(max)
θja1
0
25125
mbient temperature Ta[ ℃]
75100
(b) Derating curve
1000
800
600
400
θja2 <θja1
θja2
540[mW]
535[mW]
50
BU7291SG(*20)
BU7481SG(*20)
BU7485SG(*20)
BU5281SG(*20)
BU7255SHFV(*21)
BU7495SHFV(*21)
Tj(max)
200
POWER DISSIPATION [mW]
0
050100150
AMBIEN T TEM PERAT URE[℃]
85
(c) BU7291G BU7481G BU7485G
BU5281G BU7255HFV BU7495HFV
200
POW ER DISSIPAT ION [m W ]
0
050100150
AMBIEN T T EMPERATUR E[℃]
105
(d) BU7291SG BU7481SG BU7485SG
BU5281SG BU7255SHFV BU7495SHFV
When using the unit above Ta=25[℃], subtract the value above per degree[℃]. Permissible dissipation is the value
when FR4 glass epoxy board 70[mm]×70[mm]×1.6[mm] (cooper foil area below 3[%]) is mounted
1) Absolute maximum ratings
Absolute maximum ratings are the values which indicate the limits, within which the given voltage range can be safely
charged to the terminal. However, it does not guarantee the circuit operation.
2) Applied voltage to the input terminal
For normal circuit operation of voltage comparator, please input voltage for its input terminal within input common mode
voltage VDD + 0.3[V]. Then, regardless of power supply voltage, VSS-0.3[V] can be applied to input terminals without
deterioration or destruction of its characteristics.
3) Operating power supply (split power supply/single power supply)
The operational amplifier operates if a given level of voltage is applied between VDD and VSS. Therefore, the operational
amplifier can be operated under single power supply or split power supply.
4) Power dissipation (Pd)
If the IC is used under excessive power dissipation. An increase in the chip temperature will cause deterioration of the
radical characteristics of IC. For example, reduction of current capability. Take consideration of the effective power
dissipation and thermal design with a sufficient margin. Pd is reference to the provided power dissipation curve.
5) Output short circuit
If short circuit occurs between the output terminal and VDD terminal, excessive in output current may flow and generate
heat, causing destruction of the IC. Take due care.
6) Using under strong electromagnetic field
Be careful when using the IC under strong electromagnetic field because it may malfunction.
Technical Note
7) Usage of IC
When stress is applied to the IC through warp of the printed circuit board, The characteristics may fluctuate due to the
piezo effect. Be careful of the warp of the printed circuit board.
8) Testing IC on the set board
When testing IC on the set board, in cases where the capacitor is connected to the low impedance, make sure to
discharge per fabrication because there is a possibility that IC may be damaged by stress. When removing IC from the set
board, it is essential to cut supply voltage. As a countermeasure against the static electricity, observe proper grounding
during fabrication process and take due care when carrying and storage it.
9) The IC destruction caused by capacitive load
The transistors in circuits may be damaged when VDD terminal and VSS terminal is shorted with the charged output
terminal capacitor.When IC is used as a operational amplifier or as an application circuit, where oscillation is not activated
by an output capacitor,the output capacitor must be kept below 0.1[μF] in order to prevent the damage mentioned above.
10) Decupling capacitor
Insert the decupling capacitance between VDD and VSS, for stable operation of operational amplifier.
11) Latch up
Be careful of input voltage that exceed the VDD and VSS. When CMOS device have sometimes occur latch up operation.
And protect the IC from abnormaly noise.
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