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BU7150NUV
Technical data
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ROHM BU7150NUV Technical data

Compact Headphone Amplifiers
Headphone Amplifier Designed for 0.93V Low Voltage Operation
●Description
BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C). BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output power is 85mW at RL = 8Ω in BTL mode.
●Features
1) Wide battery operation Voltage
2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation
3) Unity-gain stability
4) Click and pop-noise reduction circuit built-in
5) Shutdown mode(Low power mode)
6) High speed turn-on mute mode
7) Thermal shutdown protection circuit
8) Power-on reset circuit not sensed during start-up slew rate of supply voltage
9) Small package (VSON010V3030)
●Applications
Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc..
●Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Ratings Unit
Supply Voltage VDD 4.5 V
(0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C)
No.11102ECT01
Input Voltage VIN VSS-0.3~VDD+0.3 V
Input Current IIN -10~10 mA
Power Dissipation PD 560 * mW
Storage Temperature Range TSTG -55~+150 °C
*For operating over 25°C, de-rate the value at 5.6mW/°C. This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer.
●Operating conditions
Parameter Symbol
Operation Temperature Range TOPR -40 - 85 °C
Supply Voltage (Note 1,2) VDD 0.93 - 3.5 V
Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C. If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C. (But, it is not the one which guarantees the standard value for electric characteristics.) Note 2: Ripple in power supply line should not exceed 400mV
Ratings
Min. Typ. Max.
.(VDD=1.5 V, Ta=25°C )
P-P
Unit
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© 2011 ROHM Co., Ltd. All rights reserved.
1/16
2011.05 - Rev.C
●Electrical characteristics
Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified.
Parameter Symbol
Min. Typ. Max.
Limits
Unit Conditions
No Signal Operating Current IDD - 1 1.4 mA No load, No signal
Shutdown Current ISD - 3 9 μA SDB Pin=VSS
Mute Current IMUTE - 15 - μA MUTEB Pin=VSS, SE
Output Offset Voltage VOFS - 5 50 mV | VOUT1 – VOUT2 |, No signal
70 85 - mW RL=8Ω, BTL, THD+N=1%
Maximum Output Power PO
- 14 - mW RL=16Ω, SE, THD+N=1%
- 0.2 0.5 % 20kHz LPF, RL=8Ω, BTL, PO=25mW
Total Harmonic Distortion +Noise THD+N
- 0.1 0.5 % 20kHz LPF, RL=16Ω, SE,PO=5ｍW
Technical Note
Output Voltage Noise VNO - 10 - μV
20kHz LPF + A-weight
rms
Crosstalk CT - 85 - dB RL=16Ω, SE, 1kHz BPF
- 62 - dB
Power Supply Rejection Ratio PSRR
- 66 - dB
Ripple voltage=200mV RL=8Ω, BTL, C
Ripple voltage=200mV RL=16Ω, SE, C
Input Logic High Level VIH 0.7 - - V MUTEB Pin, SDB Pin
Input Logic Low Level VIL - - 0.3 V MUTEB Pin, SDB Pin
“BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS. Turn-on time in BTL mode is about 11 times faster than single-ended mode. Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode.
●Block diagram
1
IN1
10
VDD
MUTEB
2
9
OUT1SDB
Control Logic
3
8
MODE
BYPASS
4
Bias
Generator
7
OUT2
5
IN2
6
VSS
TOP VIEW
Fig. 1 Block diagram
BYPASS
BYPASS
,
P-P
=4.7μF
,
P-P
=4.7μF
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© 2011 ROHM Co., Ltd. All rights reserved.
2/16
2011.05 - Rev.C
●Electrical characteristics waveform (Reference data)
Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35. Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode
0
VDD=1.5V, SE mode
-10
-20
-30
-40
THD+N [dB]
-50
-60
-70
10n 100n 1u 10u 100u 1m 10m 100m
Ou tput P o w er [W]
Fig. 2 THD+N vs. Output Power
）
0
VDD=1.5V, BTL mode
-10
-20
-30
-40
THD+N [dB]
-50
-60
-70
10n 100n 1u 10u 100u 1m 10m 100m
Ou tput P o w er [W]
Fig. 3 THD+N vs. Output Power
0
VDD=1.2V, SE mode
-10
-20
-30
THD +N [dB ]
-40
-50
-60
10n 100n 1u 10u 100u 1m 10m 100m
Ou tput P o w er [W]
Fig. 4 THD+N vs. Output Power
0
VDD=1.2V, BTL mode
-10
-20
-30
THD+N [dB]
-40
-50
-60
10n 100n 1u 10u 100u 1m 10m 100m
Ou tput P o w er [W]
Fig. 5 THD+N vs. Output Power
0
VDD=1.5V, Po=5mW,
-10 SE mo de, BW<80kHz
-20
-30
-40
-50
THD+N [dB]
-60
-70
-80
10 100 1k 10k 100k
Frequency [Hz]
Fig. 6 THD+N vs. Frequency
0
VDD=1.5V, Po=25mW,
-10 BTL mode, BW<80kHz
-20
-30
-40
-50
THD+N [dB]
-60
-70
-80
10 100 1k 10k 100k
Frequency [Hz]
Fig. 7 THD+N vs. Frequency
0
VDD=1.2V, Po=2.5mW,
-10 SE mo de, BW<80kHz
-20
-30
-40
-50
THD+N [dB]
-60
-70
-80
10 100 1k 10k 100k
Frequency [Hz]
Fig. 8 THD+N vs. Frequency
0
VDD=1.2V, Po=10mW,
-10 BTL mode, BW<80kHz
-20
-30
-40
-50
THD+N [dB]
-60
-70
-80
10 100 1k 10k 100k
Frequency [Hz]
Fig. 9 THD+N vs. Frequency
Technical Note
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© 2011 ROHM Co., Ltd. All rights reserved.
3/16
2011.05 - Rev.C
0
-10
-20
-30
-40
-50
-60
-70
Outpu t Lev el [dBV]
-80
-90
-100
-100 -80 -60 -40 -2 0 0
0
-20
-40
-60
-80
Ou tput L eve l [d BV]
-100
-120
-120 -100 -80 -60 -4 0 -20 0
10
0
-10
-20
Gain [dB]
-30
-40
-50
10 100 1k 10k 100k 1M
10
0
-10
-20
Gain [dB]
-30
-40
-50
10 100 1k 10k 100k 1M
VDD=1.5V, SE mode
Inp ut Le vel [dBV]
Fig. 10 Output Level vs. Input Level
VDD=1.2V, SE mode
Inp ut Le vel [dBV]
Fig. 12 Output Level vs. Input Level
VDD=1.5V, Po=5mW, SE mode
Frequency [Hz]
Fig. 14 Gain vs. Frequency
VDD=1.2V, Po=2.5m W, SE m ode
Frequency [Hz]
Fig. 16 Gain vs. Frequency
0
-10
VDD=1.5V, BTL mode
-20
-30
-40
-50
-60
-70
Outpu t Lev el [dBV]
-80
-90
-100
-100 -80 -60 -4 0 -20 0
Input Level [dBV]
Fig. 11 Output Level vs. Input Level
0
VDD=1.2V, BTL mode
-20
-40
-60
-80
Outpu t Lev el [dBV]
-100
-120
-120 -100 -80 -60 -40 -2 0 0
Inp u t L evel [dBV]
Fig. 13 Output Level vs . Input Level
10
0
-10
-20
Gain [dB]
-30
-40 VDD=1.5V, Po=25mW, BTL m ode
-50
10 100 1k 10k 100k 1M
10
0
-10
-20
Gain [dB]
-30
-40
VDD=1.2V, Po=10mW, BTL m ode
-50
10 100 1k 10k 100k 1M
Frequency [Hz]
Fig. 15 Gain vs. Frequency
Frequency [Hz]
Fig. 17 Gain vs. Frequency
Technical Note
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© 2011 ROHM Co., Ltd. All rights reserved.
4/16
2011.05 - Rev.C
140
120
100
80
60
Power [mW]
40
20
0
Fig. 18 Maximum output Power vs. Supply Voltage
40
35
30
25
20
15
Power [mW]
10
5
0
0.0 0.5 1.0 1.5 2.0
Fig. 20 Maximum output Power vs. Supply Voltage
0
-10
-20
-30
-40
-50
PSRR [dB]
-60
-70
-80
-90
10 100 1k 10k 100k
0
-10
-20
-30
-40
-50
PSRR [dB]
-60
-70
-80
-90
10 100 1k 10k 100k
SE mo de
THD+N = 10%
THD+N = 1%
01234
SE mode Zoom up
SE m o de, In put Term ina te d i n to 1 0Ω
SE m ode , In p ut Term ina te d in to 10 Ω
Supply Voltage [V]
THD+N = 10%
Supply Voltage [V]
VDD=1.5V, Input=200mV
Frequency [Hz]
Fig. 22 PSRR vs. Frequency
VDD=1.2V, Input=200mV
Frequency [Hz]
Fig. 24 PSRR vs. Frequency
THD+N = 1%
,
P-P
,
P-P
Technical Note
1000
900
BTL mode
800
700
600
500
400
Power [mW]
300
200
100
0
01234
Fig. 19 Maxim um output Power vs . Supply Voltage
200
BTL mode
180
Zoom up
160
140
120
100
80
Power [mW]
60
40
20
0
0.0 0.5 1.0 1.5 2.0
Fig. 21 Maxim um output Power vs . Supply Voltage
0
-10
-20
-30
-40
-50
PSRR [dB]
-60
-70
-80
-90
-10
-20
-30
-40
-50
PSRR [dB]
-60
-70
-80
-90
VDD=1.5V, Input=200mV
BTL m od e, Inp u t Te rm i nate d in to 10 Ω
10 100 1k 10k 100k
0
VDD=1.2V, Input=200mV
BTL m od e, Inp u t Te rm i nate d in to 10 Ω
10 100 1k 10k 100k
THD+N = 10%
THD+N = 1%
Supply Voltage [V]
THD+N = 10%
THD+N = 1%
Supply Voltage [V]
,
P-P
Frequency [Hz]
Fig. 23 PSRR vs. Frequency
,
P-P
Frequency [Hz]
Fig. 25 PSRR vs. Frequency
:WC (PO=7 0 m W
×
TH D+N =1% )
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© 2011 ROHM Co., Ltd. All rights reserved.
5/16
2011.05 - Rev.C
Crosstalk [dB]
-100
-110
-120
Noise Level [dBV]
-100
-120
-140
-160
-40
-50
-60
-70
-80
-90
-20
-40
-60
-80
VDD=1.5V, Input=400mV
SE mode, Input Terminated into 10Ω
10 100 1k 10k 100k
0
VDD=1.5V, SE mode, 20kHz LPF + A-weight
10 100 1k 10k 100k
Fig. 28 Noise Level vs. Frequency
Frequency [Hz]
Fig. 26 Crosstalk vs. Frequency
Frequency [Hz]
,
P-P
-40
VDD=1.2V, Input=400mV
SE m o de, In put Term ina te d i n to 1 0Ω
10 100 1k 10k 100k
0
VDD=1.5V, BTL mode, 20kHz LPF + A-weight
10 100 1k 10k 100k
Frequency [Hz]
Fig. 27 Crosstalk vs . Frequency
Frequency [Hz]
Fig. 29 Noise Level vs. Frequency
Crosstalk [dB]
Noise Level [dBV]
-50
-60
-70
-80
-90
-100
-110
-120
-20
-40
-60
-80
-100
-120
-140
-160
,
P-P
Technical Note
1.2 SE m o de, In put= no s ign al
1
0.8
0.6
IDD [m A ]
0.4
0.2
0
01234
-50 VDD=1.5V, Input=400mV
-55
-60
-65
-70
-75
MU TE L eve l [dB]
-80
-85
-90
10 100 1k 10k 100k
Supply Voltage [V]
Fig . 3 0 ID D vs. Su p ply Vol ta g e
, SE mode
P-P
Frequem cy [Hz]
Fig. 32 MUTE Level vs. Frequency
4.5 SE m ode , In p ut=n o s i gna l
4
3.5
3
2.5
2
ISD [μA]
1.5
1
0.5
0
01234
Supply Voltage [V]
Fig. 31 ISD vs. Supply Voltage
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6/16
2011.05 - Rev.C
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