Universal Standard Specification Series Serial EEPROM Series
Advantage Series Serial EEPROMs
Microwire BUS
BR93C□□-10□U-1.8 family
●Description
The BR93C46/56/66 series ICs are serial EEPROMs of 1K/2K/4Kbits, respectively, which feature low voltage operation and
low power consumption, enabling compatibility with a wide range of applications. In addition, compact packages are
available, contributing to end-product miniaturization.
●Features
1) Microwire Bus interface
2) Single supply voltage: 1.8 to 5.5V
3) 16bit serial EEPROM
4) Automatic ERASE before WRITE and self-timed programming cycle
5) Ready /Busy status
6) 2MHz Clock Frequency, 10ms WRITE Time
7) Auto-increment of register address for READ mode
8) 1,000,000 WRITE/ERASE Cycles
9) 40-year data retention
●Pin configuration
Table1.Pin Configuration
Pin Name Function
CS Chip Select
SK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
GND Ground
VCC Power Supply
DC Don’t Connect
These EEPROMs utilize a three line serial interface
consisting of Serial Data Input (DI), Serial Clock (SK), and
Serial Data Output (DO)
After one READ instruction segment is received, if the Chip
Select (CS) remains HIGH, the address pointer automatically
cycles to the next higher register address, giving a
continuous string of output data, depending on the device
and the starting address.
When a WRITE or WRAL instruction is received, the
previous data in the address locations are
automatically overwritten, eliminating the need for an ERASE
command.
When Chip Select (CS) is set to H after the WRITE command,
the Status signal (Ready/Busy) becomes active at the Serial
Data Output (DO) until the start bit of the next command. The
Status signal is active when Chip Select (CS) is HIGH, and
Serial Data Output (DO) pin outputs High – Z when Chip
Select (CS) is LOW.
CS
SK
DI
DO
8-lead SOIC Rotated (1K JEDEC only)
DC
VCC
CS
SK
8-lead SOIC
1
2
3
4
1
2
3
4
Figure1.Package
8
7
6
5
8
7
6
5
No.10001EAT11
VCC
DC
DC
GND
DC
GND
DO
DI
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1/10
2010.07 - Rev.
BR93C□□-10□U-1.8 family
●Absolute maximum ratings
Table 2: Absolute Maximum Ratings
Parameter Symbol
Ratings
Min. Max.
Unit
Technical Note
Storage Temperature T
Output Range(Q=V
or Hi-Z) V
OH
-65 125 ℃
STG
-0.3 Vcc+0.3 V
out
Input range VIN -0.3 VCC+0.3 V
Supply Voltage VCC -0.3 6.5 V
●Recommended Operating Conditions
Table 3: Recommended Operating Conditions
Parameter Symbol
Ratings
Min. Max.
Supply Voltage VCC 1.8 5.5 V
Ambient Operating Temperature TA -40 85 ℃
●Block Diagram
CS
Command Decode
Control
Clock Generation
Power Source Voltage Detection
SK
Write
Prohibit
High Voltage
DI
Command
Register
Address
Buffer
6bi
7bit
8bit
Address
Decoder
DO
Dummy Bit
Data
Register
16bit
R/W
Amplifier
Figure 2: Block Diagram
Unit
6bit
7bit
8bit
16bit
1024 bit
2048 bit
4096 bit
EEPROM
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© 2010 ROHM Co., Ltd. All rights reserved.
2/10
2010.07 - Rev.
BR93C□□-10□U-1.8 family
●Electrical characteristics
Table 4: DC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)
Specification
Parameter Symbol
Unit Test Condition
Min. Typ. Max
Supply Voltage VCC 1.8 - 5.5 V
Technical Note
Supply Current ICC
- - 2.0 mA V
=5V, READ at f=1MHz
CC
- - 2.0 mA VCC=5V, WRITE at f=1MHz
- - 10 µA Vcc=2.7V,CS=0V
Standby Current ISB
- - 30 µA Vcc=5.0V,CS=0V
Input Leakage IIL - - 1.0 µA 0V≦VIH≦Vcc
Output Leakage IOL - - 1.0 µA 0≦V
Input Low Voltage
Input High Voltage
Input Low voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V
IL1
V
IH1
V
IL2
V
IH2
V
OL1
V
OH1
V
OL2
V
OH2
-0.3
2.0
-0.3
0.7VCC
- - 0.4 V
2.4 - - V
-
VCC-0.2
-
-
-
-
-
-
0.8
Vcc+0.3
0.2V
CC
Vcc+0.3
0.2
-
V
V
V
V
V V 1.8V≦V
OUT≦VCC
4.0V≦V
≦5.5V
CC
VCC≦4.0 V
2.7V≦V
I
=2.1mA, IOH=-0.4mA
OL
I
=0.15mA, IOH=-100µA
OL
≦5.5V
CC
≦2.7V
CC
,DO in Hi-Z
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© 2010 ROHM Co., Ltd. All rights reserved.
3/10
2010.07 - Rev.
BR93C□□-10□U-1.8 family
Table 5: AC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)
Specification
Parameter Symbol
Min. Typ. Max
SK Clock Frequency fSK
SK High Time t
SK Low Time t
SKH
SKL
Minimum CS Low Time tCS
CS Set-up Time(relative to SK) t
DI Set-up Time(relative to SK) t
CSS
DIS
0
0
0
*1
250
250
1000
*1
250
250
1000
250
250
1000
50
50
200
100
100
400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
1
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Technical Note
Unit Test Condition
MHz
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
ns
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
ns
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
ns
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
ns
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
ns
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
CS Hold Time(relative to SK) t
DI Hold Time(relative to SK) t
0 - - ns
CSH
DIH
100
400
100
-
-
-
-
-
ns
-
250
Output Delay to “1” t
- -
PD1
250
ns
1000
250
Output Delay to “0” t
- -
PD0
250
ns
1000
250
CS to Status Vaid tSV - -
250
ns
1000
100
CS to Do in High Impedance tDF - -
100
ns
400
Write Cycle time tWP - - 10 ms
Endurance(5.0V,25℃) - 1M - -
*1: t
+ t
≧1/fc
SKL
SKH
Write
Cycle
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
4.5V≦Vcc≦5.5V
2.7V≦Vcc≦5.5V
1.8V≦Vcc≦5.5V
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2010.07 - Rev.