ROHM BR93C46-10SU-1.8 Technical data

A

Universal Standard Specification Series Serial EEPROM Series

Advantage Series Serial EEPROMs Microwire BUS

BR93C□□-10□U-1.8 family

●Description

The BR93C46/56/66 series ICs are serial EEPROMs of 1K/2K/4Kbits, respectively, which feature low voltage operation and low power consumption, enabling compatibility with a wide range of applications. In addition, compact packages are available, contributing to end-product miniaturization.

●Features

1) Microwire Bus interface

2) Single supply voltage: 1.8 to 5.5V

3) 16bit serial EEPROM

4) Automatic ERASE before WRITE and self-timed programming cycle

5) Ready /Busy status

6) 2MHz Clock Frequency, 10ms WRITE Time

7) Auto-increment of register address for READ mode

8) 1,000,000 WRITE/ERASE Cycles

9) 40-year data retention

●Pin configuration

Table1.Pin Configuration

Pin Name Function

CS Chip Select

SK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

GND Ground

VCC Power Supply

DC Don’t Connect

These EEPROMs utilize a three line serial interface consisting of Serial Data Input (DI), Serial Clock (SK), and Serial Data Output (DO) After one READ instruction segment is received, if the Chip Select (CS) remains HIGH, the address pointer automatically cycles to the next higher register address, giving a continuous string of output data, depending on the device and the starting address. When a WRITE or WRAL instruction is received, the previous data in the address locations are automatically overwritten, eliminating the need for an ERASE command.

When Chip Select (CS) is set to H after the WRITE command, the Status signal (Ready/Busy) becomes active at the Serial Data Output (DO) until the start bit of the next command. The Status signal is active when Chip Select (CS) is HIGH, and Serial Data Output (DO) pin outputs High – Z when Chip Select (CS) is LOW.

CS

SK

DI

DO

8-lead SOIC Rotated (1K JEDEC only)

DC

VCC

CS

SK

8-lead SOIC

1

2

3

4

1

2

3

4

Figure1.Package

8

7

6

5

8

7

6

5

No.10001EAT11

VCC

DC

GND

DC

GND

DO

DI

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BR93C□□-10□U-1.8 family

●Absolute maximum ratings

Table 2: Absolute Maximum Ratings

Parameter Symbol

Ratings

Min. Max.

Unit

Technical Note

Storage Temperature T

Output Range(Q=V

or Hi-Z) V

OH

-65 125 ℃

STG

-0.3 Vcc+0.3 V

out

Input range VIN -0.3 VCC+0.3 V

Supply Voltage VCC -0.3 6.5 V

●Recommended Operating Conditions

Table 3: Recommended Operating Conditions

Parameter Symbol

Ratings

Min. Max.

Supply Voltage VCC 1.8 5.5 V

Ambient Operating Temperature TA -40 85 ℃

●Block Diagram

CS

Command Decode Control Clock Generation

Power Source Voltage Detection

SK

Write Prohibit

High Voltage

DI

Command Register

Address Buffer

6bi 7bit 8bit

Address Decoder

DO

Dummy Bit

Data Register

16bit

R/W Amplifier

Figure 2: Block Diagram

Unit

6bit 7bit 8bit

16bit

1024 bit 2048 bit 4096 bit EEPROM

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●Electrical characteristics

Table 4: DC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)

Specification

Parameter Symbol

Unit Test Condition

Min. Typ. Max

Supply Voltage VCC 1.8 - 5.5 V

Technical Note

Supply Current ICC

- - 2.0 mA V

=5V, READ at f=1MHz

CC

- - 2.0 mA VCC=5V, WRITE at f=1MHz

- - 10 µA Vcc=2.7V,CS=0V

Standby Current ISB

- - 30 µA Vcc=5.0V,CS=0V

Input Leakage IIL - - 1.0 µA 0V≦VIH≦Vcc

Output Leakage IOL - - 1.0 µA 0≦V

Input Low Voltage Input High Voltage

Input Low voltage Input High Voltage

Output Low Voltage Output High Voltage

V

IL1

V

IH1

V

IL2

V

IH2

V

OL1

V

OH1

V

OL2

V

OH2

-0.3

2.0

-0.3

0.7VCC

- - 0.4 V

2.4 - - V

-

VCC-0.2

-

0.8

Vcc+0.3

0.2V

CC

Vcc+0.3

0.2

-

V V

V V 1.8V≦V

OUT≦VCC

4.0V≦V

≦5.5V

CC

VCC≦4.0 V

2.7V≦V I

=2.1mA, IOH=-0.4mA

OL

I

=0.15mA, IOH=-100µA

OL

≦5.5V

CC

≦2.7V

CC

,DO in Hi-Z

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Table 5: AC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)

Specification

Parameter Symbol

Min. Typ. Max

SK Clock Frequency fSK

SK High Time t

SK Low Time t

SKH

SKL

Minimum CS Low Time tCS

CS Set-up Time(relative to SK) t

DI Set-up Time(relative to SK) t

CSS

DIS

0 0 0

*1

250 250

1000

*1

250 250

1000

250 250

1000

50 50

200

100 100 400

-

2 1

0.25

-

Technical Note

Unit Test Condition

MHz

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

CS Hold Time(relative to SK) t

DI Hold Time(relative to SK) t

0 - - ns

CSH

DIH

100 400

100

-

ns

-

250

Output Delay to “1” t

- -

PD1

250

ns

1000

250

Output Delay to “0” t

- -

PD0

250

ns

1000

250

CS to Status Vaid tSV - -

250

ns

1000

100

CS to Do in High Impedance tDF - -

100

ns

400

Write Cycle time tWP - - 10 ms

Endurance(5.0V,25℃) - 1M - -

*1: t

+ t

≧1/fc

SKL

SKH

Write

Cycle

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

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