ROHM BR93C46-10SU-1.8 Technical data

A

Universal Standard Specification Series Serial EEPROM Series

Advantage Series Serial EEPROMs Microwire BUS

BR93C□□-10□U-1.8 family

●Description

The BR93C46/56/66 series ICs are serial EEPROMs of 1K/2K/4Kbits, respectively, which feature low voltage operation and low power consumption, enabling compatibility with a wide range of applications. In addition, compact packages are available, contributing to end-product miniaturization.

●Features

1) Microwire Bus interface

2) Single supply voltage: 1.8 to 5.5V

3) 16bit serial EEPROM

4) Automatic ERASE before WRITE and self-timed programming cycle

5) Ready /Busy status

6) 2MHz Clock Frequency, 10ms WRITE Time

7) Auto-increment of register address for READ mode

8) 1,000,000 WRITE/ERASE Cycles

9) 40-year data retention

●Pin configuration

Table1.Pin Configuration

Pin Name Function

CS Chip Select

SK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

GND Ground

VCC Power Supply

DC Don’t Connect

These EEPROMs utilize a three line serial interface consisting of Serial Data Input (DI), Serial Clock (SK), and Serial Data Output (DO) After one READ instruction segment is received, if the Chip Select (CS) remains HIGH, the address pointer automatically cycles to the next higher register address, giving a continuous string of output data, depending on the device and the starting address. When a WRITE or WRAL instruction is received, the previous data in the address locations are automatically overwritten, eliminating the need for an ERASE command.

When Chip Select (CS) is set to H after the WRITE command, the Status signal (Ready/Busy) becomes active at the Serial Data Output (DO) until the start bit of the next command. The Status signal is active when Chip Select (CS) is HIGH, and Serial Data Output (DO) pin outputs High – Z when Chip Select (CS) is LOW.

CS

SK

DI

DO

8-lead SOIC Rotated (1K JEDEC only)

DC

VCC

CS

SK

8-lead SOIC

1

2

3

4

1

2

3

4

Figure1.Package

8

7

6

5

8

7

6

5

No.10001EAT11

VCC

DC

GND

DC

GND

DO

DI

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BR93C□□-10□U-1.8 family

●Absolute maximum ratings

Table 2: Absolute Maximum Ratings

Parameter Symbol

Ratings

Min. Max.

Unit

Technical Note

Storage Temperature T

Output Range(Q=V

or Hi-Z) V

OH

-65 125 ℃

STG

-0.3 Vcc+0.3 V

out

Input range VIN -0.3 VCC+0.3 V

Supply Voltage VCC -0.3 6.5 V

●Recommended Operating Conditions

Table 3: Recommended Operating Conditions

Parameter Symbol

Ratings

Min. Max.

Supply Voltage VCC 1.8 5.5 V

Ambient Operating Temperature TA -40 85 ℃

●Block Diagram

CS

Command Decode Control Clock Generation

Power Source Voltage Detection

SK

Write Prohibit

High Voltage

DI

Command Register

Address Buffer

6bi 7bit 8bit

Address Decoder

DO

Dummy Bit

Data Register

16bit

R/W Amplifier

Figure 2: Block Diagram

Unit

6bit 7bit 8bit

16bit

1024 bit 2048 bit 4096 bit EEPROM

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●Electrical characteristics

Table 4: DC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)

Specification

Parameter Symbol

Unit Test Condition

Min. Typ. Max

Supply Voltage VCC 1.8 - 5.5 V

Technical Note

Supply Current ICC

- - 2.0 mA V

=5V, READ at f=1MHz

CC

- - 2.0 mA VCC=5V, WRITE at f=1MHz

- - 10 µA Vcc=2.7V,CS=0V

Standby Current ISB

- - 30 µA Vcc=5.0V,CS=0V

Input Leakage IIL - - 1.0 µA 0V≦VIH≦Vcc

Output Leakage IOL - - 1.0 µA 0≦V

Input Low Voltage Input High Voltage

Input Low voltage Input High Voltage

Output Low Voltage Output High Voltage

V

IL1

V

IH1

V

IL2

V

IH2

V

OL1

V

OH1

V

OL2

V

OH2

-0.3

2.0

-0.3

0.7VCC

- - 0.4 V

2.4 - - V

-

VCC-0.2

-

0.8

Vcc+0.3

0.2V

CC

Vcc+0.3

0.2

-

V V

V V 1.8V≦V

OUT≦VCC

4.0V≦V

≦5.5V

CC

VCC≦4.0 V

2.7V≦V I

=2.1mA, IOH=-0.4mA

OL

I

=0.15mA, IOH=-100µA

OL

≦5.5V

CC

≦2.7V

CC

,DO in Hi-Z

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Table 5: AC Characteristics (Unless otherwise specified, Ta=-40-85℃, VCC=1.8-5.5V)

Specification

Parameter Symbol

Min. Typ. Max

SK Clock Frequency fSK

SK High Time t

SK Low Time t

SKH

SKL

Minimum CS Low Time tCS

CS Set-up Time(relative to SK) t

DI Set-up Time(relative to SK) t

CSS

DIS

0 0 0

*1

250 250

1000

*1

250 250

1000

250 250

1000

50 50

200

100 100 400

-

2 1

0.25

-

Technical Note

Unit Test Condition

MHz

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

ns

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

CS Hold Time(relative to SK) t

DI Hold Time(relative to SK) t

0 - - ns

CSH

DIH

100 400

100

-

ns

-

250

Output Delay to “1” t

- -

PD1

250

ns

1000

250

Output Delay to “0” t

- -

PD0

250

ns

1000

250

CS to Status Vaid tSV - -

250

ns

1000

100

CS to Do in High Impedance tDF - -

100

ns

400

Write Cycle time tWP - - 10 ms

Endurance(5.0V,25℃) - 1M - -

*1: t

+ t

≧1/fc

SKL

SKH

Write

Cycle

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5V≦Vcc≦5.5V

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

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●Operating Instructions The BR93□□ has a seven instruction set, shown in Tables 6 and 7. The timing charts depicted in Figures 3 to 10.

Input Data are clocked in from Serial Data Input (DI) at the rising edge of the Serial Clock (SK), while output data from the Serial Data Output (DO) toggles at the rising edge of the Serial Clock (SK) during READ mode.

Table 6: Instruction Set (BR93C46)

Instruction Start Bit Op Code Address*1 Data

Technical Note

The EEPROM recognizes the first 1 data received, after Chip Select (CS) goes HIGH, as the START bit. The input of many 0’s before 1 will not make a difference – 1 will still be recognized as the START bit.

READ

EWEN

ERASE

WRITE

ERAL

WRAL

EWDS

*1: * = Inconsequential bit

Table 7: Instruction Set (BR93C56 and BR93C66)

Instruction Start Bit Op Code Address

READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0

EWEN 1 00 1 1 ***** *

ERASE 1 11 A7 A6 A5 A4 A3 A2 A1 A0

WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15～D0

ERAL 1 00 1 0 ***** *

1 10 A5 A4 A3 A2 A1 A0

1 00 1 1 * * * *

1 11 A5 A4 A3 A2 A1 A0

1 01 A5 A4 A3 A2 A1 A0 D15～D0

1 00 1 0 * * * *

1 00 0 1 * * * * D15～D0

1 00 0 0 * * * *

*1, *2

Data

WRAL 1 00 0 1 ***** * D15～D0

EWDS 1 00 0 0 ***** *

*1:＊= Inconsequential bit *2: Address bit A7 is not decoded by the BR93C56.

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●Function Description

READ The addressed 16 bits of data are clocked out after the READ instruction is received. During clocking of the 11th(1) bit the clock is HIGH and the EEPROM outputs ‘0’ (dummy 0) as a sign to begin data output. This device has an auto-increment feature that provides the whole memory array data using just one READ command. It is recommended that Chip Select (CS) is HIGH and the Serial Clock (SK) keep clocking, since the EEPROM will output the next address data following the addressed 16 bits of data.

EWEN The unit is in disable mode after power ON. The EWEN instruction must precede any WRITE commands. After EWEN is executed the EEPROM will be in enable mode until power OFF or EWDS instruction is received. Neither the EWEN nor the EWDS instruction has any effect on the READ instruction. The state ( H or L) of the Serial Data Input (DI) after the 6th clock of the Serial Clock (SK) doesn’t matter, either. Therefore, it is recommended that eight more Serial Clock (SK) signals be inputted.

EWDS This command puts the EEPROM into disable mode – similar to the status after power ON. The READ command can be preceded even in disable mode. It is recommended that the EWDS command be executed after any WRITE commands in order to prevent inadvertent writing. The state (H or L) of Serial Data Input (DI) after the 6th clock of the Serial Clock (SK) does not matter. Therefore, the inputting of eight more Serial Clock (SK) signals is recommended as well.

ERASE The ERASE command writes ‘1’ to all bits in the specified address. Between the rising edge of the 11th and 12th(2) clock cycles the falling edge of Chip Select (CS) initiates a high voltage cycle that writes the data into the non-volatile memory array. The Serial Data Output (DO) pin indicates the Ready/Busy status.

WRITE The WRITE command writes 16 bits of data into the specified address. Between the rising edge of the 27th and 28th(3) clock cycles the falling edge of Chip Select (CS) initiates a high voltage cycle that writes the data into the non-volatile memory array. The Serial Data Output (DO) pin indicates the Ready/Busy status. During this high voltage cycle (busy state), the EEPROM does not receive any commands. The unit will not write the data into non-volatile memory array if Chip Select (CS) is L after input of the 28th(4) or more cycle of the Serial Clock (SK)

Technical Note

ERAL

The ERAL command writes ‘1’ in all bits at the specified address. Between the rising edge of 11th and 12th cycles the falling edge of Serial Clock (SK) initiates a high voltage cycle that writes the data into the non-volatile memory array. Serial Data Output (DO) gives an indication of the Ready/Busy status. The time from the rising edge of the 11th than t

WRAL This command writes 16 bits of data to the specified address. It takes maximum 5ms, since all of the data are written into the memory array at the same time. Between the rising edge of the 27th and 28th falling edge of Chip Select (CS) initiates a high voltage cycle that writes the data into the non-volatile memory array. The EEPROM will not write the data into the non-volatile memory array if Chip Select (CS) is L after input of the 28th

(1),(6) BR93C46 : 9th

(2),(5) BR93C46 : 9th and 10th

(3),(7) BR93C46 : 25th and 26th

(4),(8) BR93C46 : 26th

(6)

clock to the falling edge of S should be more

.

SKH

(7)

clock cycles the

(8)

or more cycle of the Serial Clock (SK).

BR93C56/66 : 11th

BR93C56/66 : 11th and 12th

BR93C56/66 : 27th and 28th

BR93C56/66 : 28th

(5)

clock

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●Timing Diagrams

CS

SK

DI

DO (READ)

DO (WRITE)

CS

SK

DI

12 4

11

DO

High-Z

CS

SK

DI

DO

High-Z

t

CSS

t

DIS

t

SV

t

SKH

t

DIH

t

PD0

Figure 3: Synchronous Data Timing

～

Am-1

Am

0

～

Figure 4: READ Sequence

12345

Figure 5: EWEN Sequence

Figure 6: EWDS Sequence

t

SKL

t

PD1

STATUS VALID

～

9n

10

A0

A1

D15 D14

0

110 10

～

n+1

（*1）

D0

D15

D1

*1: Output the data of next address

～

n678

～

t

CSH

～

D14

～

(Auto Increment)

BR93C46: n=9 BR93C56/66: n=11

Technical Note

t

DF

BR93C46: n=25,m =5 BR93C56/66: n=27,m=7

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CS

SK

12 4

DI

0

1

Am-1

Am

1

DO

High-Z

CS

SK

12 5

DI

10001

DO

High-Z

CS

SK

12 4

DI

111Am

DO

High-Z

CS

SK

1

24

1

DI

0010

DO

High-Z

Technical Note

～

A1 A0

～

D1D15 D14

～

Figure 7: WRITE Sequence

～

Figure 8: WRAL Sequence

t

CS

～

n

～

A3 A2

～

A0A1

t

SV

Figure 9: ERASE Sequence

t

SLSH

n

～

Figure 10: ERAL Sequence.

t

～

CS

t

SLSH

n

STATUS

～

BR93C46: n=25,m =5 BR93C56/66: n=27,m=7

D0

n

～

t

SV

READYBUSY

～

t

WP

～

t

CS

STATUS

～

*Inconsequential Data

D0D1D15 D14

～

BUSY

～

t

WP

～

t

SV

STATUS

READ

STATUS

～

READYBUSY

～

t

WP

～

BR93C46: n=25 BR93C56/66: n=27

BR93C46: n=9, m=5 BR93C56/66: n=11, m=7

BR93C46: n=9 BR93C56/66: n=11

～

t

SHQV

READY

BUSY

～

tW

～

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●Ordering Information

Table 8: BR93C46 Ordering Information

Ordering Code Package Operating Range

BR93C46R-10SU-1.8 BR93C46-10SU-1.8

Table 9: BR93C56 Ordering Information

Ordering Code Package Operating Range

BR93C56-10SU-1.8 BR93C56-10TU-1.8

Table 10: BR93C66 Ordering Information

Ordering Code Package Operating Range

BR93C66-10SU-1.8 BR93C66-10TU-1.8

●Package outline

Table 11 JEDEC SOIC, Package Size Data

Figure 11. JEDEC SOIC Package outline

Notes

1. This drawing is subject to change without notice.

2. Body dimensions do not include mold flash or protrusion, or gate burns.

3. Reference JEDEC MS-012 variation AA.

JEDEC SOIC JEDEC SOIC

JEDEC SOIC -40 to 85℃

Symbol

A

A1

D

E

E1

θ

Typ. Min. Max. Typ. Min. Max.

1.375 1.275 1.475 0.054 0.050 0.058

0.175 - - 0.007 - -

0.42 0.32 0.52 0.017 0.013 0.02

b

0.20 0.10 0.30 0.008 0.004 0.012

c

4.90 4.70 5.10 0.193 0.185 0.201

1.27 －－ 0.05 －－

e

6.00 5.70 6.30 0.236 0.224 0.248

3.90 3.70 4.10 0.154 0.146 0.161

L

-40 to 85℃

mm inches

－ 0.45 －－ 0.018 －

4° 0° 10° 4° 0° 10°

Technical Note

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Technical Note

●Ordering part number

B R 9 3 C 4 6 A N - 1 0 S U - 1.8

ROHM prefix BUS type

93C: Microwire

2

24C: I

C

25: SPI

●Tape and Real Information

Density

Microwire 46=1K 56=2K 66=4K 76=8K 86=16K

REV

Pakage type □-10S:JEDECSOIC

(Microwire,BR24C01)

N-10S: JEDECSOIC

(I2C[except BR24C01],SPI)

Operating temperature

U: -40°C~+85°C Pb-Free

I2C 01=1K 02=2K 04=4K 08=8K 16=16K 32=32K 64=64K

SPI 010=1K 020=2K 040=4K 080=8K 160=16K 320=32K 640=64K

Supplyvoltage

1.8:1.8V~5.5V

2.7:2.7V

~5.5V

Embossed carrier tapeTape

Quantity

Direction of feed

2500pcs E2

The direction is the 1pin of product is at the upper left when you hold

()

reel on the left hand and you pull out the tape on the right hand

Reel

1pin

Order quantity needs to be multiple of the minimum quantity.

∗

Direction of feed

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Notes

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specications, which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes effor ts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

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R1010

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ROHM BR93C46-10SU-1.8 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual