ROHM BH6789FVM Technical data

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STRUCTURE Silicon Monolithic Integrated Circuit
PRODUCT SERIES Single-Phase Full-Wave Motor Driver for Fan Motor
TYPE
BH6789FVM
FEATURES Soft switched drive
ABSOLUTE MAXIMUM RA TINGS
Parameter Supply voltage Power dissipation Operating temperature Storage temp erature Output current
AL signal output current AL signal output voltage
Junction temperature
Symbol Limit Unit
Vcc 7 V
Pd 585 mW Topr -40~+105 Tstg -55~+150
Iomax 1000** mA
IAL 5 mA
VAL 7 V
Tjmax 150
Reduce by 4.68mW/ over 25℃.
(On 70.0mm×70.0mm×1.6mm glass epoxy board)
** This value is not to exceed Pd. Vcc=4.0V~6.0V
At Vcc=2.0V4.0V,output current tolerance reduces.
OPERA TING CONDITIONS
Parameter
Operating supply voltage range Hall input voltage range
This product is not designed for production against radioactive rays. This document may be strategic data subject to COCOM regulations.
Symbol
Limit Unit
Vcc 2.06.0 V
VH 0.4Vcc-1.1 V
REV. D
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ELECTRICAL CHARACTERISTICS (Unless otherwise specified Ta=25℃,Vcc=5V)
Parameter
Symbol
Min. Typ. Max.
Limit
Unit Conditions
Circuit current Icc - 5 8 mA Input offset voltage VHOFS - - ±6 mV
Output voltage
VO - 0.32 0.49 V
Input-output Gain GIO 45 48 51 dB AL low voltage VALL - - 0.3 V Lock detection ON time TON 0.35 0.50 0.65 sec Lock detection OFF time
Hall bias voltage
TOFF 3.5 5.0 6.5 sec
VHB 1.1 1.3 1.5 V
P ACKAGE OUTLINES
2.9 ± 0.1
58
Io250mA Upper and Lower total
IAL=3mA
IHB=-5mA
H 6 7
0.1
8 9
±
2.8
4.0 ± 0.2
0.475
0.9Max.
0.75 ± 0.05
0.08 ± 0.05
0.65
41
Lot No.
0.22
0.08 S
+0.05
0.04
0.29 ± 0.15
0.145
0.6 ± 0.2
+0.05
0.03
0.08
M
MSOP8(UNIT:mm)
BLOCK DIAGRAM Terminal name
OUT2
1
H+
HB
H-
OSC
Lock
Protection
Hall
Bias
2
3
4
500Ω
500Ω
150kΩ
-
+
-
+
150kΩ
TSD
GND
OUT1
Vcc
AL
8
Pin No.
1 OUT2
7
2 H+ 3 HB 4 H-
6
5 AL 6 Vcc 7 OUT1
5
8 GND
Terminal
name
REV. D
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