ROHM BH6766FVM Technical data

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STRUCTURE Silicon Monolithic Integrated Circuit
PRODUCT SERIES Single-Phase Full-Wave Motor Driver for Fan Motor
TYPE
BH6766FVM
FEATURES Soft switched drive
ABSOLUTE MAXIMUM RA TINGS
Parameter Supply voltage Power dissipation Operating temperature Storage temp erature Output current
FG signal output current FG signal output voltage
Junction temperature
Symbol Limit Unit
Vcc 7 V
Pd 585 mW Topr -40~+105 Tstg -55~+150
Iomax 630** mA
IFG 5 mA
VFG 7 V
Tjmax 150
Reduce by 4.68mW/ over 25℃.
(On 70.0mm×70.0mm×1.6mm glass epoxy board)
** This value is not to exceed Pd. Vcc=4.0V6.0V
At Vcc=2.0V4.0V,output current tolerance reduces.
OPERATING CONDITIONS
Parameter
Operating supply voltage range Hall input voltage range
This product is not designed for production against radioactive rays.
Symbol
Limit Unit
Vcc 2.06.0 V
VH 0.4Vcc-1.1 V
REV. E
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ELECTRICAL CHARACTERISTICS (Unless otherwise specified Ta=25℃,Vcc=5V)
Parameter
Symbol
Min. Typ. Max.
Limit
Unit Conditions
Circuit current Icc - 5 8 mA Input offset voltage
VHOFS - - ±6 mV
Output voltage
VO - 0.6 0.9 V
Input-output Gain FG low voltage FG leak current Input hysteresis voltage
Hall bias voltage
GIO 45 48 51 dB
VFGL - - 0.3 V
IFGL - - 5 μA
VHYS ±5 ±10 ±15 mV
VHB 1.1 1.3 1.5 V
P ACKAGE OUTLINES
2.9 ± 0.1
58
H 6 7
0.1
±
2.8
4.0 ± 0.2
0.475
0.9Max.
6 6
0.65
41
Lot No.
0.22
0.08 S
+0.05
0.04
0.29 ± 0.15
0.145
0.6 ± 0.2
+0.05
0.03
0.08
M
0.75 ± 0.05
0.08 ± 0.05
MSOP8(UNIT:mm)
BLOCK DIAGRAM Terminal name
OUT2
1
H+
2
HB
3
H-
4
Bias
500Ω
Hall
500Ω
150kΩ
-
+
TSD
+
-
150kΩ
+
-
GND
OUT1
Vcc
FG
8
Pin No.
1 OUT2
7
2 H+ 3 HB 4 H-
6
5 FG 6 Vcc 7 OUT1
5
8 GND
Io250mA Upper and Lower total
IFG=3mA VFG=7V
IHB=-5mA
Terminal
name
REV. E
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