BD9763FVM is a 1-channel high efficiency step-up switching regulator.
It is possible to choose small application space due to its high-speed operation (Max switching frequency 1.2MHz)
●Features
1) Build-in under voltage lock out circuit.
2) High accuracy reference voltage (2.5V±1.0%)
3) Establish maximum duty cycle internally.
4) CTL/SS terminal for both stand-by and soft-start function. (Soft-start time can be set by external capacitor)
5) MSOP8 thin and small package.
●Applications
Single-lens reflex cameras, digital video cameras, liquid crystal modules, DVD drive.
●Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Limit Unit
Supply voltage Vcc 10 V
Storage temperature range Tstg -55 to +150 ℃
Power dissipation Pd 587 * mW
Junction temperature Tjmax +150 ℃
* IC mounted on a PCB board (70mm x 70mm x 1.6mm, glass epoxy).
Reduced by 4.7mW for each increase in Ta of 1℃ over 25℃.
●Recommended Operating Conditions
Parameter Symbol
Supply voltage Vcc 4 7 9 V
Oscillating frequency fosc 100 - 1200 kHz
Operating temperature range Topr -40 - +85 ℃
This voltage reference block generates 2.5V internal reference voltage.
・OSCILLATOR BLOCK
Oscillator block sets the oscillating frequency adjusted by an external resistance in RT pin. The oscillating
frequency can be set within a range of 100~1200kHz.. (See the description of how to set the frequency on page6.)
・PWM COMP
The PWM comparator transforms the voltage outputted from error amp to PWM waveform and outputs to FET driver.
The maximum duty cycle is limited up to 90%.
・ERROR AMP BLOCK
The error amp block detects the output voltage from the INV pin, amplifies the difference between the detected voltage
and the reference voltage, and outputs it to FB pin. The reference voltage is 1V±2%.
・PROTECTION CIRCUIT BLOCK
The under voltage lock out circuit is activated to shut down the whole circuit when the VCC voltage is up to 3.8V.
When the thermal shutdown circuit detects abnormal heating of the chip (150℃), the output becomes off.
And the output turns back on when the chip temperature goes down to a specific level.
It is recommended to use an inductor which satisfies the following rating current (the following value of current), and also
has low DCR. The shield type inductor is preferable.
I peak = Io・(Vo/VIN) / η + VIN・(VOUT-VIN) / (2・VOUT・L・f) [A]
[ Io : Output Vo : Output voltage VIN : Input voltage η : Efficiency L : Inductance f : Oscillating frequency ]
(2) Output capacitor
It is recommended to use the output capacitor which has the enough margin to maximum rating for output voltage and
low fluctuation for temperature. The ripple voltage of the output is influenced by ESR of the output capacitor.
Refer to Fig.5 and determine Timing resistor (RRT) when setting the oscillating frequency.
Oscillating frequency vs. Timing resistance
10000
[kHz]
1000
frequency
Oscillating
100
1101001000
Timing resistance (RT) [kΩ]
Fig.8 Oscillating frequency – Timing resistance (R
(6) Setting the output voltage
The output voltage is calculated by the following equation.
Vo = VINVth・(R1+R2)/R2 [V]
R1,R2 : Resistor divider network
VINth : Error amp threshold voltage (typ.1V)
(but Vo<VIN・5 because of MAXDUTY Min=80%)
(7) CTL/SS setting the soft start time
The time after CTL/SS is released before the output voltage starts to rise.
t(start) = CCTL・(VDo-Voff)/Iss [S] approximated equation
The time after the output voltage starts up before it reaches the specified output level.
t(soft) = CCTL・(VDUTY-VDo)/Iss [S] approximated equation
VDUTY = VDo+0.5・(1-VIN/VOUT) [V]
CCTL : CTL/SS–GND capacitande Vdo : 0% duty threshold (Typ 1.6V) Voff : Output off CTL/SS voltage
Iss : CTL/SS charge current (Typ 1uA) VDUTY : stabilization operating ON duty.
*Place these parts with attention about patterns shown in following Fig.7
Fig.10
RT
VCC
VCC
RT
OUT
C1
C1
GND
C2
OUT
GND
VREF
CTL/SS
FB
INV
VREF
C1 : Capacitor terminals have to be close enough to terminals of VCC and GND.
It is safe to pass OUT signal line under C1.
C2 : Capacitor terminals have to be close enough to terminals of VREF and GND.
R1 : Pattern area has to be small enough to reduce parasitic capacitance of RT terminal.
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may
result in IC deterioration or damage. Assumptions should not be made regarding the state of the IC(short mode or open
mode) when such damage is suffered. A physical safety measure such as fuse should be implemented when use of the IC
in a special mode where the absolute maximum ratings may be exceeded is anticipated.
(2) GND potential
Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin.
Carry a voltage lower then or equal to the GND pin, including during actual transient phenomena.
(3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
(4) Inter-pin shorts and mounting errors
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in
damage to the IC. Shorts between output pins or between output pins and the power supply and GND pin caused by the
presence of a foreign object may result in damage to the IC.
(5) Operation in a strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(6) Thermal shutdown circuit (TSD circuit)
This IC incorporates a built-in thermal shutdown circuit (TSD circuit). The TSD circuit designed only to shut the IC off to
prevent runaway thermal operation.
do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of the thermal
shutdown circuit is assumed.
(7) Testing on application boards
When testing the IC on an application board, connecting a capacitor to pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure,
and use similar caution when transporting or storing the IC. Always turn the IC’s power supply off before connecting it to
or removing it from a jig or fixture the inspection process.
(8) Common impedance
Power supply and ground wiring should reflect consideration of the need to lower common impedance and minimize ripple
as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and
capacitance).
(9) Applications with modes that reverse VCC and pin potentials may cause damage to internal IC circuits.
For example, such damage might occur when VCC is shorted with the GND pin while an external capacitor is charged.
It is recommended to insert a diode for preventing back current flow in series with VCC or bypass diodes between VCC
and each pin.
Bypass diode
Back current prevention diode
VCC
Output pin
Fig.13
(10) Timing resistor
Timing resistor connected between RT and GND, has to be placed near RT terminal (8pin).
And pattern has to be short Enough.
This monolithic IC contains P + isolation and PCB layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.14,
○the P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for
the transistor (NPN).
○Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines
With the N layer of other adjacent elements to operate as a parasitic NPN transistor.
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result
of the IC’s architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in away that will
trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (PCB) voltage to input
and output pins.
(Pin A)(Pin B)
+
P
N
P
N
PCB
GND
Parasitic diode
+
P
N
P
N
Parasitic transistors
B
C
+
N
PCB
E
GND
P
N
GND
+
P
N
Other adjacent element
(Pin A)
(Pin B)
GND
B
Parasitic diode
C
E
GND
Parasitic elements
Fig.14
●Power Dissipation Reduction
pd(W)
0.8
0.6
0.4
0.587W
0.2
POWER DISSIPATION : pd(W)
0
25
50
150751001250
175
AMBIENT TEMPERATURE : Ta(℃)
IC mounted on a ROHM standard board (70mm x 70mm x 1.6mm, glass epoxy)
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