ROHM BD95503MUV Technical data

1/4

STRUCTURE Silicon Monolithic Integrated Circuit
TYPE 1ch DC/DC converter IC

PRODUCT SERIES

BD95503MUV

FEATURES ・Built in 1ch H

3

Reg DC/DC converter controller

・Adjustable output voltage setting (0.75V～5.5V)

○Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Limit Unit

1*2

Input Voltage VIN, VINS 24
BOOT Voltage BOOT
BOOT-SW Voltage BOOT-SW
Output Voltage VOUT 7

＊

V

1*2

＊

30

1*2

＊

7

1*2

＊

V

V
V

Output Feedback Voltage FB VREG V

1*2

VREG Voltage VREG 7

＊

V

Current Limit Setting Voltage ILIM VREG V

1*2

＊

24

Logic Input Voltage EN
Output Current（Average）

Isw
Power Dissipation 1 Pd1 0.34
Power Dissipation 2 Pd2 0.70
Power Dissipation 3 Pd3 1.21
Power Dissipation 4 Pd4 3.56
Operating Temperature Range Topr
Storage Temperature Range Tstg

-20～+100 ℃

-55～+150 ℃

1

＊

3

3

＊

W

4

＊

W

5

＊

W

6

＊

W

V
A

Maximum Junction Temperature Tjmax +150 ℃

*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 2.7mW/℃ for each increase in Ta of 1℃ over 25℃ (when don’t mounted on a heat radiation board )

*4 Reduced by 5.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area : 10.29mm2)
*5 Reduced by 9.7mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 10.29mm2,

2-3layer: 5505mm2)

*6 Reduced by 28.5mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 5505mm2)

○Operating Conditions （Ta=25℃）

Parameter Symbol MIN. MAX. Unit
Input Voltage VIN, VINS 7.5 20 V
BOOT Voltage BOOT 4.5 25 V
SW Voltage SW -0.7 20 V
BOOT-SW Voltage BOOT-SW 4.5 5.5 V
Logic Input Voltage EN 0 20 V
Output Voltage VOUT 0.75 5.5 V
MIN ON TIME tonmin - 100 ns

● This product is not designed to be used in a radioactive environment.

REV. B

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○Electrical Characteristics (Unless otherwise noted, Ta=25℃ VCC=5V, VIN=VINS=12V, VEN=3V, VOUT=1.8V)

Parameter Symbol

Standard Value

MIN. TYP. MAX.

Unit Conditions

[Whole Device]
VIN Bias current IIN - 1.0 2.0 mA VCC=VREG
VIN Standby current IIN_stb - 0 10 μA VEN=0V
EN Low Voltage VEN_low GND - 0.3 V
EN High Voltage VEN_high 2.2 - 20 V
EN Pull-down resistance REN 30 50 70 kΩ

[5VLinear Regulator]

VREG Standby Voltage VREG_stb - - 0.1 V VEN=0V
VREG Output Voltage VREG 4.9 5.1 5.3 V

VIN=VINS=7.5V to 20V
Ireg=10mA

[Under Voltage Lock Out]
VREG threshold Voltage VREG_UVLO 3.75 4.20 4.65 V VREG:Sweep up
VREG hysteresis Voltage dVREG_UVLO 100 160 220 mV VREG:Sweep down

[Over Voltage Protection]
FB threshold Voltage FB_OVP 0.8 0.9 1.0 V

[H3Reg

TM

Control]
ON Time ton 200 300 400 ns
MIN OFF Time Toffmin 300 500 - ns

[FET Driver]
High side ON resistance RHGhon - 0.270 0.540 Ω
Low side ON resistance RLGlon - 0.135 0.270 Ω

[Current Control]
Current Limit
threshold Voltage

V

ilim 440 470 500 mV RILIM=47kΩ

[Output Voltage Sense]
FB threshold Voltage FB 0.738 0.750 0.762 V
FB Input current IFB -1 - 1 μA
VOUT discharge current IVOUT 5 10 - mA VOUT=1V, VEN=0V

[SCP]

Threshold Voltage Vthscp REF×0.6 REF×0.7 REF×0.8 V

REV. B