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STRUCTURE Silicon Monolithic Integrated Circuit
TYPE 1ch DC/DC converter IC
PRODUCT SERIES
BD95503MUV
FEATURES ・Built in 1ch H
3
Reg DC/DC converter controller
・Adjustable output voltage setting (0.75V～5.5V)
○Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Limit Unit
1*2
Input Voltage VIN, VINS 24
BOOT Voltage BOOT
BOOT-SW Voltage BOOT-SW
Output Voltage VOUT 7
＊
V
1*2
＊
30
1*2
＊
7
1*2
＊
V
V
V
Output Feedback Voltage FB VREG V
1*2
VREG Voltage VREG 7
＊
V
Current Limit Setting Voltage ILIM VREG V
1*2
＊
24
Logic Input Voltage EN
Output Current（Average）
Isw
Power Dissipation 1 Pd1 0.34
Power Dissipation 2 Pd2 0.70
Power Dissipation 3 Pd3 1.21
Power Dissipation 4 Pd4 3.56
Operating Temperature Range Topr
Storage Temperature Range Tstg
-20～+100 ℃
-55～+150 ℃
1
＊
3
3
＊
W
4
＊
W
5
＊
W
6
＊
W
V
A
Maximum Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 2.7mW/℃ for each increase in Ta of 1℃ over 25℃ (when don’t mounted on a heat radiation board )
*4 Reduced by 5.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area : 10.29mm2)
*5 Reduced by 9.7mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 10.29mm2,
2-3layer: 5505mm2)
*6 Reduced by 28.5mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 5505mm2)
○Operating Conditions （Ta=25℃）
Parameter Symbol MIN. MAX. Unit
Input Voltage VIN, VINS 7.5 20 V
BOOT Voltage BOOT 4.5 25 V
SW Voltage SW -0.7 20 V
BOOT-SW Voltage BOOT-SW 4.5 5.5 V
Logic Input Voltage EN 0 20 V
Output Voltage VOUT 0.75 5.5 V
MIN ON TIME tonmin - 100 ns
● This product is not designed to be used in a radioactive environment.
REV. B
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○Electrical Characteristics (Unless otherwise noted, Ta=25℃ VCC=5V, VIN=VINS=12V, VEN=3V, VOUT=1.8V)
Parameter Symbol
Standard Value
MIN. TYP. MAX.
Unit Conditions
[Whole Device]
VIN Bias current IIN - 1.0 2.0 mA VCC=VREG
VIN Standby current IIN_stb - 0 10 μA VEN=0V
EN Low Voltage VEN_low GND - 0.3 V
EN High Voltage VEN_high 2.2 - 20 V
EN Pull-down resistance REN 30 50 70 kΩ
[5VLinear Regulator]
VREG Standby Voltage VREG_stb - - 0.1 V VEN=0V
VREG Output Voltage VREG 4.9 5.1 5.3 V
VIN=VINS=7.5V to 20V
Ireg=10mA
[Under Voltage Lock Out]
VREG threshold Voltage VREG_UVLO 3.75 4.20 4.65 V VREG:Sweep up
VREG hysteresis Voltage dVREG_UVLO 100 160 220 mV VREG:Sweep down
[Over Voltage Protection]
FB threshold Voltage FB_OVP 0.8 0.9 1.0 V
[H3Reg
TM
Control]
ON Time ton 200 300 400 ns
MIN OFF Time Toffmin 300 500 - ns
[FET Driver]
High side ON resistance RHGhon - 0.270 0.540 Ω
Low side ON resistance RLGlon - 0.135 0.270 Ω
[Current Control]
Current Limit
threshold Voltage
V
ilim 440 470 500 mV RILIM=47kΩ
[Output Voltage Sense]
FB threshold Voltage FB 0.738 0.750 0.762 V
FB Input current IFB -1 - 1 μA
VOUT discharge current IVOUT 5 10 - mA VOUT=1V, VEN=0V
[SCP]
Threshold Voltage Vthscp REF×0.6 REF×0.7 REF×0.8 V
REV. B
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○Block Diagram
VIN
VOUT
VOUT
1
Thermal
Protection
TSD
EN/UVLO
TSD/OVP
VINS
7
5VReg
VREG
6
5V
EN
Soft
Start
VREG
FB
VCC
EN
24
2
5
Reference
Block
SS
REF
SS
REF(=0.75V)
BG
+
+
-
UVLO
OCP
SCP
TSD
H3Reg
Controller
Block
3
GND
TM
UVLO
Q
R
SW
OCP
EN/UVLO
Delay
EN/UVLO
S
SCP
OVP
○Physical Dimension ○Pin number・Pin name
PIN No. PIN name
1 VOUT
2 FB
3 GND
95503
Lot No.
1 PIN mark
4 ILIM
5 VCC
6 VREG
7
8-12 VIN
13-17 PGND
18-22 SW
23 BOOT
24 EN
Reverse FIN
Driver
Circuit
+
-
+
-
REF×0.7
FB
0.9V
FB
VINS
OVP
VREG
VREG
8
12
23
18
22
13
17
4
VIN
BOOT
SW
PGND
ILIM
VIN
VOUT
(Unit : mm)
REV. B
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)
○ NOTE FOR USE
1. Absolute maximum ratings
An excess in the absolute maximum r atings, such as sup ply voltage, temperat ure range of operat ing conditions, et c., can break d own the
devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to
exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2. Supply line
Since the motor’s reverse electromotive force gives rise to the return of regenerative current, measures should be taken to establish a
channel for the current, such as adding a capacitor between the power supply and GND. In determining the approach to take, make sure
that no problems will be posed by the various characteristics involved, such as capacitance loss at low temperatures with an electrolytic
capacitor.
3. GND voltage
The potential of GND, PGND pin must be minimum potential in all operating conditions.
4. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actu al op era ting conditions.
5. Inter-pin shorts and mounting errors
Use caution when positionin g the IC for mounting on print ed circuit boards. The I C may be damaged if there is any con nection error or if
pins are shorted together.
6. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
7. ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
8. Test ing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always
discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or
fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when
transporting or storing the IC.
9. Electrical characteristics
The electrical characteristics in the Specifications may vary depending on ambient temperature, power supply voltage, circuit(s) externally
applied, and/or other conditions. It is therefore requested to carefully check them including transient characteristics.
10. Not of a radiation-resistant design.
11. In the event that load containing a large inductance component
is connected to the output terminal, and generation of back-EMF at the start-up
OUTPUT
PIN
and when output is turned OFF is assumed, it is requested to insert a protection diode.
12. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at th e intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor.
For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among
circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is
lower than the GND (P substrate) voltage to an input pin, should not be used.
Pin A
Parasitic element
13. Ground Wiring Pattern
N
PP
Resistor Transistor (NPN
Pin A
P
GND
N N
P substrate
Parasitic
element
Pin B
N
Parasitic element
B
C
N
P
E
P
GND
P
N
P substrate
GND
Pin B
B C
E
Other adjacent elements
GND
Parasitic
element
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single
ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents
do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components,
either.
14. Operating ranges
If it is within the operating ranges, certain circuit functions and operations are warranted in the working ambient temperature range.
With respect to characteristic values, it is unable to warrant standard values of electric characteristics but there are no sudden variations
in characteristic values within these ranges.
15. Thermal shutdown circuit
This IC is provided with a built-in t her mal shutdown (TSD) c i rcui t , which is ac t ivat e d when the ch ip t e mpera t ur e reac he s th e th re sh o ld valu e
listed below. W hen TSD is on, the device goes to high impedance mode. Note that the TSD circuit is provided for the exclusive purpose
shutting down the IC in the presence of extreme heat, and is not designed to protect the IC per se or guarantee performance when or after
extreme heat conditions occur. Therefore, do not operate the IC with the expectation of continued use or subsequent operation once the
TSD is activated.
TSD ON temperature [℃] (typ.) Hysteresis temperature[℃] (typ.)
175 15
16.Output Voltage Resistor Setting
Output volage is adjusted with resistor. Total 10kohm resistor is recommended so that the output voltage is not affected by the FB input
current (Ty p. 1uA) .
17. Heat sink (FIN)
Since the heat sink (FIN) is connected with the Sub, short it to the GND.
REV. B
Notes
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