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STRUCTURE Silicon Monolithic Integrated Circuit
TYPE 1ch DC/DC converter IC
PRODUCT SERIES
BD95503MUV
FEATURES ・Built in 1ch H
3
Reg DC/DC converter controller
・Adjustable output voltage setting (0.75V~5.5V)
○Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Limit Unit
1*2
Input Voltage VIN, VINS 24
BOOT Voltage BOOT
BOOT-SW Voltage BOOT-SW
Output Voltage VOUT 7
*
V
1*2
*
30
1*2
*
7
1*2
*
V
V
V
Output Feedback Voltage FB VREG V
1*2
VREG Voltage VREG 7
*
V
Current Limit Setting Voltage ILIM VREG V
1*2
*
24
Logic Input Voltage EN
Output Current(Average)
Isw
Power Dissipation 1 Pd1 0.34
Power Dissipation 2 Pd2 0.70
Power Dissipation 3 Pd3 1.21
Power Dissipation 4 Pd4 3.56
Operating Temperature Range Topr
Storage Temperature Range Tstg
-20~+100 ℃
-55~+150 ℃
1
*
3
3
*
W
4
*
W
5
*
W
6
*
W
V
A
Maximum Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 2.7mW/℃ for each increase in Ta of 1℃ over 25℃ (when don’t mounted on a heat radiation board )
*4 Reduced by 5.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area : 10.29mm2)
*5 Reduced by 9.7mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 10.29mm2,
2-3layer: 5505mm2)
*6 Reduced by 28.5mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB, copper foil area: 5505mm2)
○Operating Conditions (Ta=25℃)
Parameter Symbol MIN. MAX. Unit
Input Voltage VIN, VINS 7.5 20 V
BOOT Voltage BOOT 4.5 25 V
SW Voltage SW -0.7 20 V
BOOT-SW Voltage BOOT-SW 4.5 5.5 V
Logic Input Voltage EN 0 20 V
Output Voltage VOUT 0.75 5.5 V
MIN ON TIME tonmin - 100 ns
● This product is not designed to be used in a radioactive environment.
REV. B
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○Electrical Characteristics (Unless otherwise noted, Ta=25℃ VCC=5V, VIN=VINS=12V, VEN=3V, VOUT=1.8V)
Parameter Symbol
Standard Value
MIN. TYP. MAX.
Unit Conditions
[Whole Device]
VIN Bias current IIN - 1.0 2.0 mA VCC=VREG
VIN Standby current IIN_stb - 0 10 μA VEN=0V
EN Low Voltage VEN_low GND - 0.3 V
EN High Voltage VEN_high 2.2 - 20 V
EN Pull-down resistance REN 30 50 70 kΩ
[5VLinear Regulator]
VREG Standby Voltage VREG_stb - - 0.1 V VEN=0V
VREG Output Voltage VREG 4.9 5.1 5.3 V
VIN=VINS=7.5V to 20V
Ireg=10mA
[Under Voltage Lock Out]
VREG threshold Voltage VREG_UVLO 3.75 4.20 4.65 V VREG:Sweep up
VREG hysteresis Voltage dVREG_UVLO 100 160 220 mV VREG:Sweep down
[Over Voltage Protection]
FB threshold Voltage FB_OVP 0.8 0.9 1.0 V
[H3Reg
TM
Control]
ON Time ton 200 300 400 ns
MIN OFF Time Toffmin 300 500 - ns
[FET Driver]
High side ON resistance RHGhon - 0.270 0.540 Ω
Low side ON resistance RLGlon - 0.135 0.270 Ω
[Current Control]
Current Limit
threshold Voltage
V
ilim 440 470 500 mV RILIM=47kΩ
[Output Voltage Sense]
FB threshold Voltage FB 0.738 0.750 0.762 V
FB Input current IFB -1 - 1 μA
VOUT discharge current IVOUT 5 10 - mA VOUT=1V, VEN=0V
[SCP]
Threshold Voltage Vthscp REF×0.6 REF×0.7 REF×0.8 V
REV. B