Switching Regulator
with MOSFET for DDR-SDRAM Cores
BD95500MUV
●Description
BD95500MUV is a switching regulator with high output current (up to 6A) which can achieve low output voltage
(0.7V to 5.0V) from a wide input voltage range (3V to 20V). High efficiency for the switching regulator can be realized by
utilizing an internal N-MOSFET power transistor. A new technology called H
realize ultra high transient response against load change. SLLM (Simple Light Load Mode) technology is also integrated to
improve efficiency in light load mode, providing high efficiency over a wide load range. For protection and ease of use, the
soft start function, variable frequency function, short circuit protection function with timer latch, over voltage protection
function, and power good function are all built in. This switching regulator is specially designed for sets of various kinds.
●Features
1) Integrated low ON resistance N-MOSFET (TYP. 50mΩ)
4) Thermal Shut Down (TSD), Under Voltage LockOut (UVLO), Adjustable Over Current Protection (OCP),
Over Voltage Protection (OVP), Short Circuit Protection(SCP) built-in
5) Soft start function to minimize rush current during startup
6) Adjustable switching frequency (f=200KHz~1000KHz)
7) Built-in output discharge function
8) VQFN040V6060 Package
9) Tracking Function
10) Integrated boot strap diode
11) Power Good function
●Applications
Mobile PC, Desktop PC, LCD-TV, Digital Components, etc
Power Dissipation 4 Pd4 4.66 *5 W
Operating Temperature Range Topr -10~+100 ℃
Storage Temperature Range Tstg -55~+150 ℃
Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd, ASO, and Tjmax=150℃.
*2 Reduced by 4.3mW for each increase in Ta of 1℃ over 25℃ (when don’t mounted on a heat radiation board )
*3 Reduced by 8.0mW for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB which has 1 layer.
(Copper foil area : 0mm
*4 Reduced by 30.1mW for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB which has 4 layers.
st
(1
and 4th copper foil area : 20.2mm2, 2nd and 3rd copper foil area : 5505mm2))
*5 Reduced by 37.3mW for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70mm×1.6mm Glass-epoxy PCB which has 4 layers.
(All copper foil area : 5505mm
2
))
2
))
●Operating Conditions (Ta=25℃)
Parameter
Symbol
MIN MAX
Ratings
Unit
Input Voltage 1 VCC 4.5 5.5 V
Input Voltage 2 VDD 4.5 5.5 V
Input Voltage 3 VIN 3.0 20 V
BOOT Voltage BOOT 4.5 25 V
SW Voltage SW -0.7 20 V
BOOT-SW Voltage BOOT-SW 4.5 5.5 V
MODE Input Voltage MODE 0 5.5 V
EN Input Voltage EN 0 5.5 V
Output Adjustable Voltage REF 0.7 2.0 V
Is Input Voltage Is+/Is- 0.7 2.7 V
MIN ON Time Tonmin - 200 nsec
*This product should not be used in a radioactive environment.
VCC Bias Current Icc - 1200 2000 μA
VIN Bias Current Iin - 100 200 μA
VCC Standby Current Iccstb - 0 10 μA EN=0V
VIN Standby Current Iinstb - 0 10 μA EN=0V
EN Low Voltage Enlow GND - 0.8 V
EN High Voltage Enhigh 2.3 - 5.5 V
EN Bias Current Ien - 7 10 μA
VREG Voltage Vreg 2.475 2.500 2.525 V
[Under Voltage Locked Out ]
VCC Threshold Voltage Vcc_UVLO 4.1 4.3 4.5 V VCC:Sweep up
VCC Hysteresis Voltage dVcc_UVLO100 160 220 mV VCC:Sweep down
VIN Threshold Voltage Vin_UVLO 2.4 2.6 2.8 V VIN:Sweep up
VIN Hysteresis dVin_UVLO100 160 220 mV VIN:Sweep down
VREG Threshold Voltage Vreg_UVLO2.0 2.2 2.4 V VREG:Sweep up
VREG Hysteresis Voltage dVreg_UVLO100 160 220 mV VREG:Sweep down
[H3REGTM Control Block]
ON Time Ton 400 500 600 nsec
MAX ON Time Tonmax - 3 6.0 μsec
MIN OFF Time Toffmin - 450 550 nsec
[FET Block]
High Side ON Resistance HGhon - 50 80 mΩ
Low Side ON Resistance HGlon - 50 80 mΩ
[SCP Block]
SCP Start up Voltage Vscp REF×0.60 REF×0.70 REF×0.80 V
Delay Time Tscp - 1.0 2.0 ms
[OVP Block]
OVP Detect Voltage Vovp REF×1.16REF×1.2REF×1.24 V
[Soft Start Block]
Charge Current Iss 2 4 6 μA
Discharge Current Idis 0.5 1.0 2.0 μA
Standby Voltage Vss_stb - - 50 mV
[Over Current Protection Block]
Current Limit Threshold 1 Ilim1 40 50 60 mV
Current Limit Threshold2 Ilim2 160 200 240 mV ILIM=2.0V
[Vout Setting]
VOUT Offset Voltage 1 Voutoff1 REF-10mREF REF+10mV Ta=-10℃ to 100℃
VOUT Bias Current Ivout -100 0 100 nA
REF Bias Current Iref -100 0 100 nA
Is+ Input Current IIs+ -1 0 1 μA Is+=1.8V
Is- Input Current IIs- -1 0 1 μA Is-=1.8V