ROHM BD95371MUV Technical data
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STRUCTURE Silicon Monolithic Integrated Circuit
TYPE Step down DC/DC converter Controller IC for NOTE PC
PRODUCT SERIES
BD95371MUV
FEATURES ・Built in H3Reg DC/DC controller
・Switching Frequency Variable (f=200kHz～500kHz)
○ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Parameter Symbol Limit Unit
Input Voltage 1 VCC 7
Input Voltage 2 VDD 7
Input Voltage 3 VIN 28
BOOT Voltage BOOT 35
BOOT-SW Voltage BOOT-SW 7
HG-SW Voltage HG-SW 7
LG Voltage LG VDD V
Output Voltage VOUT/Is+/Is- VCC V
EN Input Voltage EN 7
Power Dissipation 1 Pd1 0.34
Power Dissipation 2 Pd2 0.70
Power Dissipation 3 Pd3 2.20
Power Dissipation 4 Pd4 3.56
Operating Temperature Range Topr -10～+100 ℃
Storage Temperature Range Tstg -55～+150 ℃
Maximum Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 2.7mW/℃ for each increase in Ta of 1℃ over 25℃. (when don’t mounted on a heat radiation board )
*4 Reduced by 5.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 1-layer Glass-epoxy PCB,
copper foil area: 10.29mm
*5 Reduced by 17.6mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 4-layer Glass-epoxy PCB,
copper foil area: 10.29mm
*6 Reduced by 28.5mW/℃ for increase in Ta of 1℃ over 25℃. (when mounted on a board 70.0mm×70.0mm×1.6mm 4-layer Glass-epoxy PCB,
copper foil area: 5505mm
2
)
2
2,3-layer copper foil area: 5505mm2)
2
)
○ OPERATING CONDITIONS（Ta=25℃）
Parameter Symbol MIN MAX Unit
Input Voltage 1 VCC 4.5 5.5 V
Input Voltage 2 VDD 4.5 5.5 V
Input Voltage 3 VIN 4.5 25 V
BOOT Voltage BOOT 4.5 30 V
SW Voltage SW -0.7 25 V
BOOT-SW Voltage BOOT-SW 4.5 5.5 V
EN Input Voltage EN 0 5.5 V
Is Input Voltage Is+/Is- 0.7 2.7 V
MIN ON Time Tonmin - 80 ns
★ This product is not designed for protection against radioactive rays.
2
＊1＊
V
2
＊1＊
V
2
＊1＊
V
2
＊1＊
V
2
＊1＊
V
2
＊1＊
V
1
＊
V
3
＊
W
4
＊
W
5
＊
W
6
＊
W
REV. A
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○ELECTRICAL CHARACTERISTICS （unless otherwise noted, Ta=25℃ VCC=5V,VDD=5V,EN=3V,VIN=12V,VOUT=1.05V,RFS=36kΩ）
Parameter Symbol
Standard Value
MIN TYP MAX
Unit Condition
Whole Device]
VCC Bias Current
VCC Standby Current
VIN Bias Current
VIN Standby Current
EN Low Voltage
EN HighVoltage
(Forced Continuous mode)
EN HighVoltage (SLLM Mode)
EN Bias Current
Icc
Iccstb
Iin
Iinstb
EN_low
V
V
ENth_con
ENth_sllm
V
Ien
- 1500 1800 μA
-010μA EN＝0Ｖ
-3080μA
-010μA EN＝0Ｖ
GND - 0.8 V
2.3 - 3.8 V
4.5 - 5.5 V
-1525μA EN=3V
Under Voltage Locked Out ]
VCC threshold voltage Vcc_UVLO 3.7 4.0 4.3 V VCC:Sweep u
VCC hysteresis voltagedVcc
UVLO 100 160 220 mV VCC:Sweep down
H3REG Control]
ON Time Ton 194 219 244 ns
MAX ON Time Tonmax - 3.5 -
μs
MIN OFF Time Toffmin - 490 700 ns
FET Driver]
HG Higher side ON resistor HGhon - 3.0 6.0 Ω
HG Lower side ON resistor HGlon - 2.0 4.0 Ω
LG Higher side ON resistor LGhon -
3.0 6.0
Ω
LG Lower side ON resistor LGlon - 0.5 1.0 Ω
SCP]
SCP strat-up Voltage Vsc
0.345 0.420 0.495
SCP delay time Tscp - 2.5 - ms
V
OVP]
FB threshold voltage Vov
0.825 0.900 0.975
V
Soft start]
Charge current Iss 1 2 3 μA
Standby voltage Vss_stb - - 50 mV
Current Limit Block]
Setting Current Iilim - 10 -
μA
Current limit threshold Ilim 75 100 125 mV RILIM=100kΩ
Output Voltage setting
VOUT typical voltage
REF 0.743 0.750 0.757 V
Is+ Input current IIs+ -1 0 1 μA Is+=1.05V
Is- Input current IIs- -1 0 1 μA Is-=1.05V
Power Good]
FB Power Good V
PGOOD
0.38 0.47 0.56
V
Discharge ON resistor Ronpgood - 50 150 Ω
BOOT Diode]
VF voltage
VF 0.4 0.5 0.6 V IF=1mA
REV. A
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