ROHM BD8229EFV Technical data

System Motor driver IC Series for CD / DVD Players

4ch System Motor Driver IC

BD8229EFV

●Description

BD8229EFV is BTL driver of 5 input 4 output developed for driving Spindle motor, Sled/Loading motor and the actuator coil. The hysteresis comparator for reset is built in, and the number of parts can reduce.

●Features

1) 4CH BTL Driver

2) HTSSOP-B24 power package is adopted, the set is miniaturized.

3) Has a wide dynamic range（PreVcc=PowVcc=8V,RL=8Ω, 6.0Ｖ(typ.)）

4) Built-in thermal-shut down circuit

5) Separating Vcc into Pre and Power (Power divides into CH1/2 and CH3/4), can make better Power efficiency

6) Switches CH2 input by Control input terminal (CNT).

7) Incorporates mute function by CNT terminal and mute terminal

8) Built in hysteresis comparator for reset

●Applications

Car Audio

●Absolute Maximum Ratings

Parameter Symbol Limits Unit

Power supply voltage PreVcc,PowVcc1, PowVcc2 15 V

Input terminal voltage 1 Vin1*3 PreVCC V

Input terminal voltage 2 Vin2*4 PowVCC2 V

No.10011EAT01

Power dissipation Pd

Operating temperature range Topr -40~+85 ℃

Storage temperature Tstg -55~+150 ℃

Junction temperature Tjmax +150 ℃

*1 70mm×70mm×1.6mm,occupied copper foil is less than 3%,glass epoxy standard board) mounting. Reduce power by 11.6mW for each degree above 25℃. *2 Exclusive standard board mounting. Reduce power by 32.0mW for each degree above 25℃. *3 Vin1 *4 Vin2

●Recommended Operating Conditions

PRE part Power supply PreVcc 4.5~14*5 V

DC motor system power supply PowVcc1 4.5~PreVCC*3 V

Actuator system power supply PowVcc2 4.5~PreVCC*3 V

*5 Set the power supply voltage taking allowable dissipation into considering.

Application terminal：IN1, CNT, IN2-1, IN2-2, BIAS, IN3, IN4, MUTE Application terminal：RSTDET

Parameter Symbol Limits Unit

1.1*1 W

4.0*2

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BD8229EFV

●Electrical Characteristics （Unless otherwise noted,Ta=25℃, PreVcc=PowVcc=8V, BIAS=1.65V, RL=8Ω）

Parameter Symbol

Quiescent dissipation current IQ － 30 45 mA At no-load < Driver > Output offset voltage (CH1,2) Voof 12 -100 0 100 mV Output offset voltage (CH3,4) Voof 34 -50 0 50 mV Maximum output amplitude (CH1,2) VOM 12 5.4 6.0 － V Maximum output amplitude (CH3,4) VOM 34 4.7 5.3 － V Closed circuit voltage gain (CH1,2) Gv 12 24.0 25.7 27.4 dB Closed circuit voltage gain (CH3,4) Gv 34 15.5 17.5 19.5 dB MUTE terminal low level input voltage VML －－ 0.5 V MUTE terminal high level input voltage VMH 2.0 －－ V CNT terminal low level input voltage VCNTL －－ 0.5 V CNT terminal high level input voltage VCNTH 2.0 －－ V LDIN terminal voltage（SLED input） VLDIN － 0.1 0.3 V CNT=’L’ Internal bias voltage VBIN 1.53 1.65 1.77 V CNT=’H’ < Reset > Reset release voltage VDET 1.19 1.25 1.31 V Hysteresis voltage VHYS 5 25 55 mV

Detection terminal outflow current ICMP － 50 150 nA

RSTOUT output Low voltage VRSTOUT － 0.1 0.3 V 3.3VPull-up（10kΩ）

●Thermal Derating Curve

MIN TYP MAX

Limits

Unit Condition

Technical Note

④4.0Ｗ

③2.8Ｗ

②1.7Ｗ

①1.1Ｗ

Rating for 70mm×70mm(size), 1.6mm(thickness), copper foil occupation ratio less than 3%, and use of glass-epoxy substrate.

Fig.1 Power dissipation

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●Package Outlines

Technical Note

D8229EFV

Lot.No

HTSSOP-B24(Unit：mm)

Fig.2 Package Outlines

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Technical Note

●Block Diagram

24 23 22 21 20 19 18 17 16

IN1

20kΩ

CNT

100kΩ

CNT

20kΩ 20kΩ 47kΩ 47kΩ

IN2-1

1.65V

100kΩ 100kΩ

IN2-2

BIAS

47kΩ 47kΩ

IN3

IN4

MUTE

GND

MUTE

15 14 13

PreGND

RSTDET

Pre GND

1.25V

LEVEL

SHIFT

LEVEL

SHIFT

T.S.D

LEVEL

SHIFT

LEVEL

SHIFT

PowVcc11PowGND1

2 3 4 5 6 7 8 9 10 11 12

CH1 CH4

CH2 CH3

PowGND2

PowVcc2

PowVcc1

PowGND1

VO1(-)

VO1(+)

VO2(-)

VO2(+)

VO3(-)

VO3(+)

VO4(-)

VO4(+)

T. S. D：Thermal Shut-Down

Fig.3:Block Diagram

○Pin Descriptions

No. Symbol Description No. Symbol Description

1 PowVcc1 CH1,2 power supply terminal 13 PreVcc Pre,RESET power supply terminal

2 PowGND1 power GND1 14 RSTOUT Reset output

3 VO1(-) Driver CH1 negative output 15 RSTDET Reset detection comparator input

4 VO1(+) Driver CH1 positive output 16 PreGND Pre, Reset Block GND

5 VO2(-) Driver CH2 negative output 17 MUTE MUTE terminal

6 VO2(+) Driver CH2 positive output 18 IN4 CH4 input

7 VO3(-) Driver CH3 negative output 19 IN3 CH3 input

8 VO3(+) Driver CH3 positive output 20 BIAS BIAS input terminal

9 VO4(-) Driver CH4 negative output 21 IN2-2 CH2-2 input

10 VO4(+) Driver CH4 positive output 22 IN2-1 CH2-1 input

11 PowGND2 power GND2 23 CNT Control input terminal

12 PowVcc2 CH3,4 power supply terminal 24 IN1 IN1 input

RSTOUT

PreVcc

PowGND2

PreVcc

PowVcc2

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Technical Note

●Functional Description

1.The driver can put the mute by switching the terminal MUTE and the terminal CNT to High level and Low level. The table below shows the logic.

INPUT OUTPUT

MUTE CNT CH1,3,4 CH2

H H ACTIVE LD ON

H L ACTIVE SL ON

L H MUTE LD ON L L MUTE MUTE

SL : SLED LD : Loading

2.The mute works when the bias terminal (20PIN) becomes 0.7V(typ.) or less. Please set it to 1.3V or more in the state of use normally.(However, the mute doesn't work as for CH2 at CNT='H'. )

3.When the power-supply voltage becomes 3.8V(typ.) or less, the output terminal becomes the state of the mute. When the power-supply voltage rises up to 4.0V again, the driver part circuit stands up

4.The threshold voltage of PowVcc2 reset can be calculated by the following expressions.

Vin

RSTDET

PowVcc2

RVCC

10k

RSTOUT

VDET

1.25V /1.225V

R2+R1

=Vin

VDET×

・The threshold voltage of PowVcc2 reset can be changed by external resistance R1 and R2.

R1 and R2 recommend the resistance of 100kΩ or less respectively.

・Please make below the voltage of PowVcc2(PIN12) the voltage of the RSTOUT output terminal that is the pull-up (RVCC). ・The characteristic chart of RSTDET and RSTOUT is shown as follows.

RVCC

Hysterisis 25 mV( typ.

RSTOUT(V)

RSTDET（V

）

1.2 5V（typ.

）

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●Example of Recommended Circuit

SP IN

SL/LD SL IN LD IN

BIAS

ACT IN ACT IN

MUTE

RSTDET

Technical Note

RESET出力

PreVcc

24 23 22 21 20 19 18 17 16

100kΩ100k

LEVEL SHIFT

1. 65 V 20 k

BIAS

47k

47 k

MUTE

T.S.D

LEVEL

SHIFT

LEVEL

SHIFT

20k

100k

PowVcc11PowGND1

20 k

CNT

Pre GND

15 14 13

LEVEL SHIFT

CH4

Pr e GND

PowGND2

PreVcc

1.25V

PowVcc2

2 3 4 5 6 7 8 9 10 11 12

M M

PowVcc

Fig.4:Application circuit

PowVcc

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●The Picture of Application Board Wire Connection（Reference for BD8229EFV）

Technical Note

Fig.5. application board wire connection

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●The Picture of Application Board Pattern（Reference for BD8229EFV）

BD8229EFV

Technical Note

Top Silkscreen Overlay

Top Layer

Bottom Layer Bottom Silkscreen Overlay

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●Terminal Equivalent Circuit

50k

20k

47k

Technical Note

47k

×2

positive output

negative output

10k 10k

100k

10k

20k

47k

20k

100k

positive output

10k

negative output

※Resistance in the above-mentioned terminal equivalent circuit chart is 25℃, and a value at typical.

100k

10k

20k

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Technical Note

●Notes for use

1.Absolute maximum ratings We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it exceeds the absolute maximum ratings. However, this IC might be destroyed when the absolute maximum ratings, such as impressed voltages or the operating temperature range, is exceeded, and whether the destruction is short circuit mode or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety, such as fusing, if a particular mode that exceeds the absolute maximum rating is assumed.

2.Reverse polarity connection Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection device as a diode in the supply line and motor coil line.

3.Power supply line Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter capacitors (0.1μF) close to the IC power input terminals (Vcc and GND) iare recommended. Please note the electrolytic capacitor value decreases at lower temperatures and examine to dispense physical measures for safety. And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of wiring.

4.GND line Please keep the GND line the lowest potential always, and check the GND voltage when transient voltages are connected to the IC.

5.Thermal design Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature margins. This product has exposed the frame to the back side of the package, but please note that it is assumed to use heat radiation efficiency by the heat radiation for this part. Please take the heat radiation pattern on not only the surface of the substrate but also the back of the substrate widely.

6.Short circuit mode between terminals and wrong mounting Do not mount the IC in the wrong direction and displacement, and be careful about the reverse-connection of the power connector. Moreover, this IC might be destroyed when the dust short the terminals between them or GND.

7.Radiation Strong electromagnetic radiation can cause operation failures.

8.ASO (Area of Safety Operation) Do not exceed the maximum ASO and the absolute maximum ratings of the output driver.

9.TSD (Thermal Shut-Down) The TSD is activated when the junction temperature (Tj) exceeds Tjmax, and the output terminal is switched to OPEN. The guarantee and protection of set are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor use it for assumption that operates the TSD circuit.

10.Capacitor between output driver and GND If a large capacitor is connected between the output driver and GND, this IC might be destroyed when Vcc becomes 0V or GND, because the electric charge accumulated in the capacitor flows to the output driver. Please set said capacitor to smaller than 0.1μF.

11.Inspection by the set circuit board The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all process. Moreover, when attaching or detaching from jig in the inspection process, please turn off the power before mounting the IC, and turn on after mounting the IC, and vice versa. In addition, please take into consideration the countermeasures for electrostatic damage, such as giving the earth in assembly process, transportation or preservation.

12.Input terminal

This IC is a monolithic IC, and has P

isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND voltage potential is greater than the voltage potential at Terminals A on the resistor, at Terminal B on the transistor, the PN junction operates as a parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating causes the interference of circuit operation, then the wrong operation and destruction. Therefore, please be careful so as not to operate the parasitic elements by impressing to input terminals lower voltage than GND (P substrate). Please do not apply the voltage to the input terminal when the power-supply voltage is not impressed. Moreover, please impress each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when the power-supply voltage is impressing.

Terminal-A

Parasitic

element

Resistor

Terminal-A

P-Substrate

GND

Parasitic

element

Terminal-B

Parasitic element

Transistor(NPN)

P-Substrate

GND

Terminal-B

Surrounding

elements

Parasitic element

GND

Simplified structure of IC

13Earth wiring pattern

If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large current not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board. As for GND of external parts, it is similar to the above-mentioned.

14Please make below the voltage of PowVcc2(PIN12) the voltage of the RSTOUT output terminal that is the pull-up (RVCC).

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●Ordering part number

B D 8 2 2 9 E F V - E 2

Technical Note

Part No. Part No.

SSOP-B24

7.8 ± 0.2

(MAX 8.15 include BURR)

7.6 ± 0.3

5.6 ± 0.2

1.15 ± 0.1

0.1

0.65

0.22 ± 0.1

Package

EFV: HTSSOP-B24

Packaging and forming specification E2: Embossed tape and reel

Embossed carrier tapeTape

0.3Min.

0.15 ± 0.1

0.1

(Unit : mm)

Quantity

Direction of feed

2000pcs E2

The direction is the 1pin of product is at the upper left when you hold

()

reel on the left hand and you pull out the tape on the right hand

Direction of feed

Reel

1pin

Order quantity needs to be multiple of the minimum quantity.

∗

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Notes

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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

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Notice

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ROHM BD8229EFV Technical data

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